STL190N4F7AG
Automotive-grade N-channel 40 V, 1.68 mΩ typ., 120 A
STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Features
Order code
VDS
RDS(on) max
ID
STL190N4F7AG
40 V
2.00 mΩ
120 A
Designed for automotive applications and
AEC-Q101 qualified
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Wettable flank package
Applications
Figure 1: Internal schematic diagram
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onstate resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code
Marking
Package
Packaging
STL190N4F7AG
190N4F7
PowerFLAT™ 5x6
Tape and reel
June 2016
DocID028792 Rev 2
This is information on a product in full production.
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www.st.com
Contents
STL190N4F7AG
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 5
3
Test circuits ..................................................................................... 7
4
Package mechanical data ............................................................... 8
5
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4.1
PowerFLAT™ 5x6 WF type C package information .......................... 8
4.2
PowerFLAT™ 5x6 packing information ........................................... 11
Revision history ............................................................................ 13
DocID028792 Rev 2
STL190N4F7AG
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
40
V
VGS
Gate-source voltage
±20
V
ID(1)
Drain current (continuous) at TC = 25 °C
120
A
ID(1)
Drain current (continuous) at TC = 100 °C
120
A
Drain current (pulsed)
480
A
Total dissipation at TC = 25 °C
127
W
IAV
Avalanche current, repetitive or not repetitive (pulse width limited by
maximum junction temperature)
35
A
EAS
Single pulse avalanche energy (TJ = 25 °C, ID = 17.5 A, VDD = 22 V)
300
mJ
-55 to 175
°C
IDM(1)(2)
PTOT
Tj
Operating junction temperature range
Tstg
Storage temperature range
Notes:
(1)Drain
current is limited by package, the current capability of the silicon is 183 A at 25 °C.
(2)Pulse
width limited by safe operating area
Table 3: Thermal data
Symbol
Rthj-pcb
(1)
Rthj-case
Parameter
Value
Unit
Thermal resistance junction-pcb
31.3
°C/W
Thermal resistance junction-case
1.18
°C/W
Notes:
(1)When
mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s.
DocID028792 Rev 2
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Electrical characteristics
2
STL190N4F7AG
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4: On /off states
Symbol
Parameter
Test conditions
Drain-source breakdown voltage
VGS = 0 V, ID= 250 μA
IDSS
Zero gate voltagedrain current
VGS = 0 V
VDS= 40 V
IGSS
Gate-body leakage current
VGS = 20 V, VDS = 0 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 μA
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 17.5 A
V(BR)DSS
Min.
Typ.
Max.
40
Unit
V
1
µA
100
nA
4
V
1.68
2.00
mΩ
Min.
Typ.
Max.
Unit
-
3000
-
pF
-
850
-
pF
-
70
-
pF
-
41
-
nC
-
15
-
nC
-
7
-
nC
Min.
Typ.
Max.
Unit
-
19
-
ns
-
6.4
-
ns
-
25
-
ns
-
6.5
-
ns
Min.
Typ.
Max.
Unit
1.2
V
2
Table 5: Dynamic
Symbol
Ciss
Parameter
Test conditions
Input capacitance
VDS = 25 V, f = 1 MHz,
VGS= 0 V
Coss
Output capacitance
Crss
Reverse transfer capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDD = 20 V, ID = 35 A,
VGS = 10 V
(see Figure 14: "Test
circuit for gate charge
behavior")
Table 6: Switching times
Symbol
td(on)
tr
td(off)
tf
Parameter
Test conditions
Turn-on delay time
VDD = 20 V, ID = 17.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13: "Test circuit
for resistive load switching
times"and Figure 18:
"Switching time waveform")
Rise time
Turn-off delay time
Fall time
Table 7: Source-drain diode
Symbol
VSD(1)
Parameter
Test conditions
Forward on voltage
ISD = 35 A, VGS = 0 V
-
trr
Reverse recovery time
-
43
ns
Qrr
Reverse recovery charge
-
43
nC
IRRM
Reverse recovery current
ID = 35 A, di/dt = 100 A/µs
VDD = 32 V
(see Figure 15: "Test circuit
for inductive load switching
and diode recovery times")
-
2
A
Notes:
(1)Pulsed:
4/14
pulse duration = 300 µs, duty cycle 1.5%
DocID028792 Rev 2
STL190N4F7AG
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
DocID028792 Rev 2
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Electrical characteristics
STL190N4F7AG
Figure 8: Capacitance variations
Figure 9: Normalized on-resistance vs
temperature
Figure 10: Normalized V(BR)DSS vs
temperature
Figure 11: Normalized gate threshold voltage
vs temperature
Figure 12: Source-drain diode forward characteristics
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DocID028792 Rev 2
STL190N4F7AG
3
Test circuits
Test circuits
Figure 13: Test circuit for resistive load
switching times
Figure 14: Test circuit for gate charge
behavior
Figure 15: Test circuit for inductive load
switching and diode recovery times
Figure 16: Unclamped inductive load test
circuit
Figure 17: Unclamped inductive waveform
DocID028792 Rev 2
Figure 18: Switching time waveform
7/14
Package mechanical data
4
STL190N4F7AG
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
4.1
PowerFLAT™ 5x6 WF type C package information
Figure 19: PowerFLAT™ 5x6 WF type C package outline
8231817_WF_typeC_r14
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DocID028792 Rev 2
STL190N4F7AG
Package mechanical data
Table 8: PowerFLAT™ 5x6 WF type C mechanical data
mm
Dim.
Min.
Typ.
Max.
A
0.80
1.00
A1
0.02
0.05
A2
0.25
b
0.30
0.50
C
5.80
6.00
6.10
5.20
5.40
D
5.00
D2
4.15
D3
4.05
4.20
4.35
D4
4.80
5.00
5.10
D5
0.25
0.40
0.55
D6
0.15
0.30
0.45
e
4.45
1.27
E
6.20
E2
3.50
3.70
E3
2.35
2.55
E4
0.40
0.60
E5
0.08
0.28
E6
0.20
0.325
0.45
E7
0.85
1.00
1.15
E9
4.00
4.20
4.40
E10
3.55
3.70
3.85
K
1.05
L
0.90
1.00
1.10
L1
0.175
0.275
0.375
θ
0°
DocID028792 Rev 2
6.40
6.60
1.35
12°
9/14
Package mechanical data
STL190N4F7AG
Figure 20: PowerFLAT™ 5x6 recommended footprint (dimensions are in mm)
8231817_FOOTPRINT_rev14
10/14
DocID028792 Rev 2
STL190N4F7AG
4.2
Package mechanical data
PowerFLAT™ 5x6 packing information
Figure 21: PowerFLAT™ 5x6 WF tape (dimensions are in mm)
Figure 22: PowerFLAT™ 5x6 package orientation in carrier tape
DocID028792 Rev 2
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Package mechanical data
STL190N4F7AG
Figure 23: PowerFLAT™ 5x6 reel (dimensions are in mm)
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DocID028792 Rev 2
STL190N4F7AG
5
Revision history
Revision history
Table 9: Document revision history
Date
Revision
07-Jan-2016
1
First release.
2
Updated package silhouette and Figure 1: "Internal schematic
diagram" in cover page.
Updated Section 6.1: "PowerFLAT™ 5x6 WF type C package
information".
Minor text changes.
23-Jun-2016
Changes
DocID028792 Rev 2
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STL190N4F7AG
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DocID028792 Rev 2
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