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STW20NM65N

STW20NM65N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO247

  • 描述:

    MOSFET N-CH 650V 19A TO-247

  • 数据手册
  • 价格&库存
STW20NM65N 数据手册
STW20NM65N-STI20NM65N-STF20NM65N STB20NM65N-STP20NM65N N-channel 650V - 0.16Ω - 19A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET Features Type VDSS (@TJmax) RDS(on) Max ID STB20NM65N 710V < 0.19Ω 19A STI20NM65N 710V < 0.19Ω 19A STF20NM65N 710V < 0.19Ω 19A(1) STP20NM65N 710V < 0.19Ω 19A STW20NM65N 710V < 0.19Ω 19A 2 I²PAK TO-220 3 1 D²PAK 3 1. Limited only by maximum temperature allowed 1 c u d 2 TO-220FP ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance e t le Figure 1. Application ■ 3 12 3 1 Switching applications Description ) s ( ct ) s t( 2 3 1 TO-247 o r P Internal schematic diagram o s b O - This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. u d o r P e t e l o Table 1. bs O Device summary Order codes Marking Package Packaging STB20NM65N 20NM65N D²PAK Tape & reel STI20NM65N 20NM65N I²PAK Tube STF20NM65N 20NM65N TO-220FP Tube STP20NM65N 20NM65N TO-220 Tube STW20NM65N 20NM65N TO-247 Tube September 2007 Rev 1 1/18 www.st.com 18 Contents STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit ................................................ 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 c u d e t le ) s ( ct u d o r P e t e l o s b O 2/18 o s b O - o r P ) s t( STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220/I²PAK TO-247/D²PAK Unit TO-220FP VDS Drain-source voltage (VGS=0) 650 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25°C 19 19(1) A ID Drain current (continuous) at TC = 100°C 12 12 (1) A IDM (2) Drain current (pulsed) 76 76(1) A PTOT Total dissipation at TC = 25°C 160 40 dv/dt (3) VISO TJ Tstg Peak diode recovery voltage slope uc Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) 15 d o r -- ) s t( 2500 P e let Operating junction temperature Storage temperature -55 to 150 W V/ns V °C o s b O - 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤19A, di/dt ≤400A/µs, VDD = 80% V(BR)DSS Table 3. ) s ( ct Thermal data Symbol u d o Parameter r P e TO-247/D²PAK TO-220FP Unit 3.1 °C/W Rthj-case Thermal resistance junction-case Max Rthj-amb Thermal resistance junction-amb Max 62.5 °C/W Maximum lead temperature for soldering purposes 300 °C t e l o s b O TO-220/I²PAK Tl Table 4. 0.78 Avalanche characteristics Symbol Parameter Max value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 6 A EAS Single pulse avalanche energy (starting TJ=25°C, ID=IAS, VDD= 50V) 500 mJ 3/18 Electrical characteristics STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Unit Drain-source breakdown voltage ID = 1mA, VGS = 0 dv/dt (1) Drain source voltage slope Vdd=520V, Id=19A, Vgs=10V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 9.5 A 0.16 0.19 Ω Typ. Max. Unit Table 6. 650 Parameter gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Coss eq(2) ) s ( ct Equivalent output capacitance o r P e du Test conditions o s b O - VDS=15 V, ID = 9.5A V 35 2 V/ns 3 uc d o r P e let Dynamic Symbol Min. ) s t( 14 S pF pF pF VDS = 50V, f = 1 MHz, VGS = 0 2500 120 10 VGS = 0V, VDS = 0V to 520V 310 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520V, ID = 19A, VGS = 10V, (see Figure 19) 70 10 40 nC nC nC RG Gate input resistance f=1 MHz gate DC bias = 0 Test signal level = 20mV open drain 2.5 Ω t e l o 4/18 Max. V(BR)DSS 1. Characteristic value at turn off on inductive load s b O Typ. 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N Electrical characteristics Table 7. Switching times Symbol td(on) tr td(off) tf Table 8. Parameter Turn-on delay time Rise time Turn-off delay time Fall time ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Min Typ Max 25 10 80 20 VDD =325 V, ID = 9.5 A RG = 4.7Ω VGS = 10 V (see Figure 18) Unit ns ns ns ns Source drain diode Symbol ISD Test conditions Parameter Test conditions Min Typ Max Unit 19 76 A A 1.3 V Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 19A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 19A, di/dt = 100 A/µs VDD = 100 V, TJ = 25°C (see Figure 20) Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 19A, di/dt = 100 A/µs VDD = 100 V, TJ = 150°C (see Figure 20) 1. Pulse width limited by safe operating area e t le 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% ) s ( ct 460 7 30 o r P c u d 620 9 29 ns µC A ) s t( ns µC A o s b O - u d o r P e t e l o s b O 5/18 Electrical characteristics STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 D2PAK - I2PAK Figure 4. Figure 3. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220 D2PAK - I2PAK Thermal impedance for TO-220FP c u d e t le Figure 6. ) s ( ct r P e t e l o s b O 6/18 u d o Safe operating area for TO-247 ) s t( o r P o s b O Figure 7. Thermal impedance for TO-247 STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N Electrical characteristics Figure 8. Output characteristics Figure 10. Transconductance Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance c u d e t le ) s ( ct ) s t( o r P o s b O - Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations u d o r P e t e l o s b O 7/18 Electrical characteristics STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature c u d e t le ) s ( ct u d o r P e t e l o s b O 8/18 o s b O - o r P ) s t( STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N 3 Test circuit Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit c u d ) s t( Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit e t le ) s ( ct u d o Figure 22. Unclamped inductive waveform r P e o r P o s b O - Figure 23. Switching time waveform t e l o s b O 9/18 Package mechanical data STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com c u d e t le ) s ( ct u d o r P e t e l o s b O 10/18 o s b O - o r P ) s t( STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 ) s ( ct Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ o r P c u d 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 ) s t( 0.645 1.137 3.85 2.95 0.147 0.104 e t le 0.151 0.116 o s b O - u d o r P e t e l o s b O 11/18 Package mechanical data STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N TO-220FP mechanical data mm. DIM. Min. A 4.4 inch Typ. Max. Min. Typ. 4.6 0.173 0.181 Max. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 H 10 10.4 0.393 L2 0.106 16 0.630 L3 28.6 30.6 1.126 L4 9.8 10.6 .0385 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Ø 3 3.2 0.114 r P e t le 0.626 0.354 uc od E 0.126 s b O 12/18 G G1 F L7 F2 t e l o L6 H o r P e du L3 F1 B ) s ( ct L2 L5 1 23 L4 0.141 0.366 0.118 o s b O - 1.204 0.417 0.645 D A L5 ) s t( 0.409 STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N Package mechanical data TO-262 (I2PAK) mechanical data mm. inch DIM. Max. Min. A 4.40 Min. Typ. 4.60 0.173 Typ. 0.181 Max. A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 L 13 14 0.511 L1 3.50 3.93 0.137 L2 1.27 1.40 0.050 ) s t( 0.410 d o r uc 0.551 0.154 0.055 P e let ) s ( ct o s b O - u d o r P e t e l o s b O 13/18 Package mechanical data STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N D²PAK mechanical data mm inch Dim Min A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 Typ 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 4.88 15 1.27 1.4 2.4 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 10.4 0.393 Max 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.192 0.590 0.50 0.055 0.094 e t le 4° o s b O - ) s t( 0.409 0.334 5.28 15.85 1.4 1.75 3.2 0° Typ 0.315 0.4 r P e 14/18 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 8.5 u d o s b O Min 8 10 ) s ( ct t e l o Max c u d o r P 0.015 0.208 0.625 0.55 0.68 0.126 STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N Package mechanical data TO-247 MECHANICAL DATA mm. DIM. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 3.55 3.65 0.140 øR 4.50 5.50 0.177 5.50 0.17 c u d o r P 0.143 0.216 0.216 e t le ) s ( ct ) s t( 0.582 0.728 øP S 0.620 0.214 o s b O - u d o r P e t e l o s b O 15/18 Packaging mechanical data 5 STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N- Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT c u d ) s t( REEL MECHANICAL DATA DIM. P e let MAX. D 20.2 G 24.4 N 100 A ) s ( ct TAPE MECHANICAL DATA DIM. mm u d o MIN. r P e A0 10.5 B0 15.7 MAX. 10.7 0.413 0.421 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 16/18 MIN. D1 t e l o s b O MAX. inch 0.933 0.956 ro mm o s b O - MIN. B 1.5 C 12.8 T inch MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N 6 Revision history Revision history Table 9. Document revision history Date Revision 12-Sep-2007 1 Changes First release c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 17/18 STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ) s t( Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. c u d No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. e t le o r P UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. o s b O - UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. ) s ( ct u d o Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. r P e t e l o ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. bs The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. O © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18
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