STW20NM65N-STI20NM65N-STF20NM65N
STB20NM65N-STP20NM65N
N-channel 650V - 0.16Ω - 19A - TO-220/FP - D2/I2PAK - TO-247
Second generation MDmesh™ Power MOSFET
Features
Type
VDSS
(@TJmax)
RDS(on) Max
ID
STB20NM65N
710V
< 0.19Ω
19A
STI20NM65N
710V
< 0.19Ω
19A
STF20NM65N
710V
< 0.19Ω
19A(1)
STP20NM65N
710V
< 0.19Ω
19A
STW20NM65N
710V
< 0.19Ω
19A
2
I²PAK
TO-220
3
1
D²PAK
3
1. Limited only by maximum temperature allowed
1
c
u
d
2
TO-220FP
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
e
t
le
Figure 1.
Application
■
3
12
3
1
Switching applications
Description
)
s
(
ct
)
s
t(
2
3
1
TO-247
o
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P
Internal schematic diagram
o
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-
This series of devices is designed using the
second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
u
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Table 1.
bs
O
Device summary
Order codes
Marking
Package
Packaging
STB20NM65N
20NM65N
D²PAK
Tape & reel
STI20NM65N
20NM65N
I²PAK
Tube
STF20NM65N
20NM65N
TO-220FP
Tube
STP20NM65N
20NM65N
TO-220
Tube
STW20NM65N
20NM65N
TO-247
Tube
September 2007
Rev 1
1/18
www.st.com
18
Contents
STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuit
................................................ 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
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STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
TO-220/I²PAK
TO-247/D²PAK
Unit
TO-220FP
VDS
Drain-source voltage (VGS=0)
650
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25°C
19
19(1)
A
ID
Drain current (continuous) at TC = 100°C
12
12 (1)
A
IDM (2)
Drain current (pulsed)
76
76(1)
A
PTOT
Total dissipation at TC = 25°C
160
40
dv/dt (3)
VISO
TJ
Tstg
Peak diode recovery voltage slope
uc
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
15
d
o
r
--
)
s
t(
2500
P
e
let
Operating junction temperature
Storage temperature
-55 to 150
W
V/ns
V
°C
o
s
b
O
-
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤19A, di/dt ≤400A/µs, VDD = 80% V(BR)DSS
Table 3.
)
s
(
ct
Thermal data
Symbol
u
d
o
Parameter
r
P
e
TO-247/D²PAK
TO-220FP
Unit
3.1
°C/W
Rthj-case
Thermal resistance junction-case Max
Rthj-amb
Thermal resistance junction-amb Max
62.5
°C/W
Maximum lead temperature for soldering
purposes
300
°C
t
e
l
o
s
b
O
TO-220/I²PAK
Tl
Table 4.
0.78
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
6
A
EAS
Single pulse avalanche energy
(starting TJ=25°C, ID=IAS, VDD= 50V)
500
mJ
3/18
Electrical characteristics STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Unit
Drain-source
breakdown voltage
ID = 1mA, VGS = 0
dv/dt (1)
Drain source voltage slope
Vdd=520V, Id=19A,
Vgs=10V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, @125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 9.5 A
0.16
0.19
Ω
Typ.
Max.
Unit
Table 6.
650
Parameter
gfs (1)
Forward transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Coss eq(2)
)
s
(
ct
Equivalent output
capacitance
o
r
P
e
du
Test conditions
o
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b
O
-
VDS=15 V, ID = 9.5A
V
35
2
V/ns
3
uc
d
o
r
P
e
let
Dynamic
Symbol
Min.
)
s
t(
14
S
pF
pF
pF
VDS = 50V, f = 1 MHz,
VGS = 0
2500
120
10
VGS = 0V, VDS = 0V to 520V
310
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520V, ID = 19A,
VGS = 10V,
(see Figure 19)
70
10
40
nC
nC
nC
RG
Gate input resistance
f=1 MHz gate DC bias = 0
Test signal level = 20mV
open drain
2.5
Ω
t
e
l
o
4/18
Max.
V(BR)DSS
1. Characteristic value at turn off on inductive load
s
b
O
Typ.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N Electrical characteristics
Table 7.
Switching times
Symbol
td(on)
tr
td(off)
tf
Table 8.
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Min
Typ
Max
25
10
80
20
VDD =325 V, ID = 9.5 A
RG = 4.7Ω VGS = 10 V
(see Figure 18)
Unit
ns
ns
ns
ns
Source drain diode
Symbol
ISD
Test conditions
Parameter
Test conditions
Min
Typ
Max
Unit
19
76
A
A
1.3
V
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 19A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19A, di/dt = 100 A/µs
VDD = 100 V, TJ = 25°C
(see Figure 20)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19A, di/dt = 100 A/µs
VDD = 100 V, TJ = 150°C
(see Figure 20)
1. Pulse width limited by safe operating area
e
t
le
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
)
s
(
ct
460
7
30
o
r
P
c
u
d
620
9
29
ns
µC
A
)
s
t(
ns
µC
A
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5/18
Electrical characteristics STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220 D2PAK - I2PAK
Figure 4.
Figure 3.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220 D2PAK - I2PAK
Thermal impedance for TO-220FP
c
u
d
e
t
le
Figure 6.
)
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6/18
u
d
o
Safe operating area for TO-247
)
s
t(
o
r
P
o
s
b
O
Figure 7.
Thermal impedance for TO-247
STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N Electrical characteristics
Figure 8.
Output characteristics
Figure 10. Transconductance
Figure 9.
Transfer characteristics
Figure 11. Static drain-source on resistance
c
u
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e
t
le
)
s
(
ct
)
s
t(
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Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
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7/18
Electrical characteristics STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
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STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N
3
Test circuit
Test circuit
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
c
u
d
)
s
t(
Figure 20. Test circuit for inductive load
Figure 21. Unclamped Inductive load test
switching and diode recovery times
circuit
e
t
le
)
s
(
ct
u
d
o
Figure 22. Unclamped inductive waveform
r
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-
Figure 23. Switching time waveform
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9/18
Package mechanical data STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
c
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10/18
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-
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s
t(
STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.49
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
)
s
(
ct
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
o
r
P
c
u
d
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
)
s
t(
0.645
1.137
3.85
2.95
0.147
0.104
e
t
le
0.151
0.116
o
s
b
O
-
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d
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P
e
t
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s
b
O
11/18
Package mechanical data STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N
TO-220FP mechanical data
mm.
DIM.
Min.
A
4.4
inch
Typ.
Max.
Min.
Typ.
4.6
0.173
0.181
Max.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
H
10
10.4
0.393
L2
0.106
16
0.630
L3
28.6
30.6
1.126
L4
9.8
10.6
.0385
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Ø
3
3.2
0.114
r
P
e
t
le
0.626
0.354
uc
od
E
0.126
s
b
O
12/18
G
G1
F
L7
F2
t
e
l
o
L6
H
o
r
P
e
du
L3
F1
B
)
s
(
ct
L2
L5
1 23
L4
0.141
0.366
0.118
o
s
b
O
-
1.204
0.417
0.645
D
A
L5
)
s
t(
0.409
STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N Package mechanical data
TO-262 (I2PAK) mechanical data
mm.
inch
DIM.
Max.
Min.
A
4.40
Min.
Typ.
4.60
0.173
Typ.
0.181
Max.
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
0.027
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
E
10
10.40
0.393
L
13
14
0.511
L1
3.50
3.93
0.137
L2
1.27
1.40
0.050
)
s
t(
0.410
d
o
r
uc
0.551
0.154
0.055
P
e
let
)
s
(
ct
o
s
b
O
-
u
d
o
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P
e
t
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s
b
O
13/18
Package mechanical data STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N
D²PAK mechanical data
mm
inch
Dim
Min
A
A1
A2
B
B2
C
C2
D
D1
E
E1
G
L
L2
L3
M
R
V2
Typ
4.4
2.49
0.03
0.7
1.14
0.45
1.23
8.95
4.88
15
1.27
1.4
2.4
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
10.4
0.393
Max
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.192
0.590
0.50
0.055
0.094
e
t
le
4°
o
s
b
O
-
)
s
t(
0.409
0.334
5.28
15.85
1.4
1.75
3.2
0°
Typ
0.315
0.4
r
P
e
14/18
4.6
2.69
0.23
0.93
1.7
0.6
1.36
9.35
8.5
u
d
o
s
b
O
Min
8
10
)
s
(
ct
t
e
l
o
Max
c
u
d
o
r
P
0.015
0.208
0.625
0.55
0.68
0.126
STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N Package mechanical data
TO-247 MECHANICAL DATA
mm.
DIM.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
3.55
3.65
0.140
øR
4.50
5.50
0.177
5.50
0.17
c
u
d
o
r
P
0.143
0.216
0.216
e
t
le
)
s
(
ct
)
s
t(
0.582
0.728
øP
S
0.620
0.214
o
s
b
O
-
u
d
o
r
P
e
t
e
l
o
s
b
O
15/18
Packaging mechanical data
5
STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
c
u
d
)
s
t(
REEL MECHANICAL DATA
DIM.
P
e
let
MAX.
D
20.2
G
24.4
N
100
A
)
s
(
ct
TAPE MECHANICAL DATA
DIM.
mm
u
d
o
MIN.
r
P
e
A0
10.5
B0
15.7
MAX.
10.7
0.413 0.421
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
16/18
MIN.
D1
t
e
l
o
s
b
O
MAX.
inch
0.933 0.956
ro
mm
o
s
b
O
-
MIN.
B
1.5
C
12.8
T
inch
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N
6
Revision history
Revision history
Table 9.
Document revision history
Date
Revision
12-Sep-2007
1
Changes
First release
c
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STB20NM65N-STI20NM65N-STF20NM65N-STP20NM65N-STW20NM65N
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
)
s
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