找到“1048576-word”相关的规格书共4,847个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| NAND01GW4B2CZA6 | STMICROELECTRONICS[STMicroelectronics] | NAND01GW4B2CZA6 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GW4B2CN6E | STMICROELECTRONICS[STMicroelectronics] | NAND01GW4B2CN6E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GW4B2BZB6 | STMICROELECTRONICS[STMicroelectronics] | NAND01GW4B2BZB6 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GW4B2BZA1 | STMICROELECTRONICS[STMicroelectronics] | NAND01GW4B2BZA1 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GW3B2CZB1 | STMICROELECTRONICS[STMicroelectronics] | NAND01GW3B2CZB1 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GW3B2CN6E | STMICROELECTRONICS[STMicroelectronics] | NAND01GW3B2CN6E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GW3B2BN6E | STMICROELECTRONICS[STMicroelectronics] | NAND01GW3B2BN6E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR4B2CN6 | STMICROELECTRONICS[STMicroelectronics] | NAND01GR4B2CN6 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR3B2CZA6F | STMICROELECTRONICS[STMicroelectronics] | NAND01GR3B2CZA6F - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR3B2CN1E | STMICROELECTRONICS[STMicroelectronics] | NAND01GR3B2CN1E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR3B2BZA1E | STMICROELECTRONICS[STMicroelectronics] | NAND01GR3B2BZA1E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR3B2BN6E | STMICROELECTRONICS[STMicroelectronics] | NAND01GR3B2BN6E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| GM72V66841ELT-10K | HYNIX[HynixSemiconductor] | GM72V66841ELT-10K - 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM - Hynix Semiconductor | 获取价格 | ||
| GM72V66841CLT | LG[LGSemiconCo.,Ltd.] | GM72V66841CLT - 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM - LG Semicon Co.,Ltd. | 获取价格 | ||
| GM71C4256ASJ-80 | LG[LGSemiconCo.,Ltd.] | GM71C4256ASJ-80 - 262,144 WORD x 4 BIT CMOS DYNAMIC RAM - LG Semicon Co.,Ltd. | 获取价格 | ||
| GM71C4256ALZ-70 | LG[LGSemiconCo.,Ltd.] | GM71C4256ALZ-70 - 262,144 WORD x 4 BIT CMOS DYNAMIC RAM - LG Semicon Co.,Ltd. | 获取价格 | ||
| GM71C4256ALSJ-70 | LG[LGSemiconCo.,Ltd.] | GM71C4256ALSJ-70 - 262,144 WORD x 4 BIT CMOS DYNAMIC RAM - LG Semicon Co.,Ltd. | 获取价格 | ||
| GM71C4256A-10 | LG[LGSemiconCo.,Ltd.] | GM71C4256A-10 - 262,144 WORD x 4 BIT CMOS DYNAMIC RAM - LG Semicon Co.,Ltd. | 获取价格 | ||
| GM71C4256A | LG[LGSemiconCo.,Ltd.] | GM71C4256A - 262,144 WORD x 4 BIT CMOS DYNAMIC RAM - LG Semicon Co.,Ltd. | 获取价格 | ||
| GLT5160L16P-8TC | ETC[ListofUnclassifedManufacturers] | GLT5160L16P-8TC - 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM - List of Unclassifed Manufacturers | 获取价格 |
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