SI1555DL-T1-E3

Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -8 RDS(on) () ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 0.600 at VGS = - 4.5 V - 0.60 0.850 at VGS = - 2.5 V - 0.50 1.200 at VGS = - 1.8 V - 0.42 • TrenchFET® Power MOSFET • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 RB XX YY Marking Code Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1555DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel Parameter Symbol 5s P-Channel Steady State 5s Steady State Drain-Source Voltage VDS 20 -8 Gate-Source Voltage VGS ± 12 ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID ± 0.70 ± 0.66 ± 0.50 ± 0.48 IDM Pulsed Drain Current Continuous Source Current (Diode Conduction)a IS TA = 25 °C Maximum Power Dissipationa TA = 85 °C Operating Junction and Storage Temperature Range PD V - 0.60 - 0.57 - 0.43 - 0.41 ±1 0.25 0.23 - 0.25 - 0.23 0.30 0.27 0.30 0.27 0.16 0.14 0.16 0.14 TJ, Tstg Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Symbol t5s Maximum Junction-to-Ambienta Steady State Maximum Junction-to-Foot (Drain) Steady State RthJA RthJF Typical Maximum 360 415 400 460 300 350 Unit °C/W Note: a. Surface mounted on 1" x 1" FR4 board. Document Number: 71079 S13-0631-Rev. F, 25-Mar-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1555DL Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VGS(th) Gate Threshold Voltage IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Forward Transconductancea 0.6 1.4 VDS = VGS, ID = - 250 µA P-Ch - 0.45 -1 VDS = 0 V, VGS = ± 12 V N-Ch ± 100 VDS = 0 V, VGS = ± 8 V P-Ch ± 100 VDS = 20 V, VGS = 0 V N-Ch 1 P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 85 °C N-Ch 5 VDS = - 8 V, VGS = 0 V, TJ = 85 °C P-Ch VDS 5 V, VGS = 4.5 V N-Ch 1 VDS - 5 V, VGS = - 4.5 V P-Ch -1 RDS(on) gfs Diode Forward Voltagea N-Ch VDS = - 8 V, VGS = 0 V ID(on) Resistancea VDS = VGS, ID = 250 µA VSD V nA µA -5 A VGS = 4.5 V, ID = 0.66 A N-Ch 0.320 0.385 VGS = - 4.5 V, ID = - 0.57 A P-Ch 0.510 0.600 VGS = 2.5 V, ID = 0.40 A N-Ch 0.560 0.630 VGS = - 2.5 V, ID = - 0.48 A P-Ch 0.720 0.850 VGS = - 1.8 V, ID = - 0.20 A P-Ch 1.000 1.200 VDS = 10 V, ID = 0.66 A N-Ch 1.5 VDS = - 4 V, ID = - 0.57 A P-Ch 1.2 IS = 0.23 A, VGS = 0 V N-Ch 0.8 1.2 IS = - 0.23 A, VGS = 0 V P-Ch - 0.8 - 1.2 N-Ch 0.8 1.2 P-Ch 1.5 2.3 N-Ch 0.06 P-Ch 0.17 N-Ch 0.30 P-Ch 0.16 N-Ch 10 20 P-Ch 6 12 N-Ch 16 30 P-Ch 25 50 N-Ch 10 20 P-Ch 10 20 N-Ch 10 20 P-Ch 10 20 IF = 0.23 A, dI/dt = 100 A/µs N-Ch 20 40 IF = - 0.23 A, dI/dt = 100 A/µs P-Ch 20 40  S V Dynamicb Qg Total Gate Charge N-Channel VDS = 10 V, VGS = 4.5 V, ID = 0.66 A Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Source-Drain Reverse Recovery Time P-Channel VDS = - 4 V, VGS = - 4.5 V, ID = - 0.57 A N-Channel VDD = 10 V, RL = 20  ID  0.5 A, VGEN = 4.5 V, Rg = 6  P-Channel VDD = - 4 V, RL = 8  ID  - 0.5 A, VGEN = - 4.5 V, Rg = 6  trr nC ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 71079 S13-0631-Rev. F, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1555DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 1.0 VGS = 5 V thru 2.5 V 0.8 ID - Drain Current (A) ID - Drain Current (A) 0.8 2V 0.6 0.4 0.6 0.4 TC = 125 °C 0.2 0.2 1.5 V 25 °C - 55 °C 1V 0.5 1.0 1.5 2.0 2.5 0.0 0.0 3.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.0 100 0.8 80 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.0 0.0 VGS = 2.5 V 0.6 0.4 VGS = 4.5 V 0.2 2.5 Ciss 60 40 Coss 20 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 12 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.6 VDS = 10 V ID = 0.66 A VGS = 4.5 V ID = 0.66 A 4 1.4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 8 ID - Drain Current (A) 5 3 2 1 0 0.0 4 1.2 1.0 0.8 0.2 0.4 0.6 0.8 0.6 - 50 - 25 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71079 S13-0631-Rev. F, 25-Mar-13 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1555DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 1 TJ = 150 °C TJ = 25 °C 0.1 0.0 0.8 ID = 0.66 A 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.2 5 0.1 4 0.0 Power (W) VGS(th) Variance (V) ID = 250 µA - 0.1 3 2 - 0.2 1 - 0.3 - 0.4 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10-2 10-1 1 10 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 400 °C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 0.01 10-4 10 -3 4. Surface Mounted 10 -2 -1 1 10 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.com Document Number: 71079 S13-0631-Rev. F, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1555DL Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.0 1.0 2V VGS = 5 V thru 2.5 V TC = - 55 °C 0.8 ID - Drain Current (A) ID - Drain Current (A) 0.8 0.6 1.5 V 0.4 0.2 25 °C 125 °C 0.6 0.4 0.2 1V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 2.0 2.5 160 VGS = 1.8 V 1.5 1.0 Ciss 120 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.5 Transfer Characteristics 2.0 VGS = 2.5 V VGS = 4.5 V 80 Coss 40 0.5 0.0 0.0 1.0 VGS - Gate-to-Source Voltage (V) Crss 0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Document Number: 71079 S13-0631-Rev. F, 25-Mar-13 For technical questions, contact: pmostechsupport@vishay.com 8 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1555DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.6 VGS = 4.5 V ID = 0.57 A VDS = 4 V ID = 0.57 A 1.4 4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 5 3 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 - 50 1.6 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 2.0 RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C TJ = 25 °C 1.5 ID = 0.57 A 1.0 0.5 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 5 0.3 4 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) - 25 Qg - Total Gate Charge (nC) 1 0.1 0.0 1.0 0.8 1 0 0.0 1.2 0.1 3 2 0.0 1 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10-3 10-2 TJ - Junction Temperature (°C) Threshold Voltage www.vishay.com 6 For technical questions, contact: pmostechsupport@vishay.com 10-1 1 10 100 600 Time (s) Single Pulse Power Document Number: 71079 S13-0631-Rev. F, 25-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1555DL Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 400 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71079. Document Number: 71079 S13-0631-Rev. F, 25-Mar-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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