Si7160DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.0087 at VGS = 10 V
20
0.010 at VGS = 4.5 V
20
VDS (V)
30
Qg (Typ.)
21
PowerPAK SO-8
S
6.15 mm
5.15 mm
1
S
2
S
3
APPLICATIONS
G
4
• Notebook
- Logic DC/DC
D
8
• Halogen-free According to IEC 61249-2-21
Available
• Ultra-Low On-Resistance Using High
Density TrenchFET® Gen II Power
MOSFET Technology
• Qg Optimized
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg Tested
D
• 100 % UIS Tested
D
7
D
Schottky Diode
G
6
D
5
N-Channel MOSFET
Bottom View
Ordering Information: Si7160DP-T1-E3 (Lead (Pb)-free)
Si7160DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
PD
TJ, Tstg
Limit
30
± 16
20a
20a
17.8b, c
14.2b, c
60
20a
4.5b, c
20
20
27.7
17.7
5b, c
3.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t ≤ 10 s
20
25
Maximum Junction-to-Ambientb, f
°C/W
RthJC
3.4
4.5
Steady State
Maximum Junction-to-Case (Drain)
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 74954
S09-0273-Rev. B, 16-Feb-09
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1
Si7160DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VGS = 0 V, ID = 250 µA
30
VGS(th)
VDS = VGS, ID = 250 µA
1.0
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
V
± 100
nA
VDS = 30 V, VGS = 0 V
0.26
1
VDS = 30 V, VGS = 0 V, TJ = 100 °C
12
100
VGS = 10 V, ID = 15 A
0.0072
0.0087
VGS = 4.5 V, ID = 10 A
0.0083
0.010
VDS = 15 V, ID = 15 A
60
VDS ≥ 5 V, VGS = 10 V
RDS(on)
V
2.5
30
mA
A
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
2970
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 10 A
44
66
21
32
VDS = 15 V, VGS = 4.5 V, ID = 10 A
6.9
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
45
115
175
43
65
35
td(on)
15
25
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
tf
Fall Time
1.5
29
21
td(off)
Turn-Off Delay Time
1.0
tf
tr
Rise Time
nC
5.8
f = 1 MHz
tr
Rise Time
pF
180
td(on)
Turn-On Delay Time
475
12
20
33
50
8
15
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
TC = 25 °C
IS
20
ISM
60
IS = 2 A
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.36
0.42
V
29
45
ns
21
35
nC
15
14
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74954
S09-0273-Rev. B, 16-Feb-09
Si7160DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
2.0
VGS = 10 V thru 4 V
1.6
I D - Drain Current (A)
I D - Drain Current (A)
48
36
3V
24
12
1.2
0.8
TJ = 125 °C
0.4
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
0.0
0.6
2.5
1.2
VDS - Drain-to-Source Voltage (V)
3.0
Transfer Characteristics
0.011
3600
Ciss
3000
0.010
0.009
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
2.4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
VGS = 4.5 V
VGS = 10 V
0.008
2400
1800
1200
Coss
0.007
600
0.006
Crss
0
0
12
24
36
48
60
0
5
ID - Drain Current (A)
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.7
ID = 10 A
ID = 15 A
8
1.5
VDS = 10 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
1.8
VDS = 15 V
6
4
VDS = 20 V
2
0
0
9
18
27
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74954
S09-0273-Rev. B, 16-Feb-09
36
45
VGS = 4.5 V
1.3
VGS = 10 V
1.1
0.9
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si7160DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
RDS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
100
150 °C
10
25 °C
1
0.1
0.01
0.0
0.06
ID = 15 A
0.05
0.04
0.03
0.02
125 °C
0.01
25 °C
0.00
0.2
0.4
0.6
0.8
0
1.0
1
2
Source-Drain Diode Forward Voltage
4
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
1
200
160
0.1
30 V
Power (W)
IR - Reverse (A)
3
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
0.01
20 V
10 V
0.001
120
80
40
0.0001
0.00001
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
Time (s)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Reverse Current (Schottky)
100
Limited by RDS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
1
100 ms
1s
0.1
10 s
TC = 25 °C
Single Pulse
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 74954
S09-0273-Rev. B, 16-Feb-09
Si7160DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
I D - Drain Current (A)
40
30
Package Limited
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
35
2.5
28
2.0
Power (W)
Power (W)
Current Derating*
21
1.5
14
1.0
7
0.5
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74954
S09-0273-Rev. B, 16-Feb-09
www.vishay.com
5
Si7160DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 70 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74954.
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Document Number: 74954
S09-0273-Rev. B, 16-Feb-09
Legal Disclaimer Notice
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Revision: 01-Jan-2022
1
Document Number: 91000