SIE808DF-T1-E3

SiE808DF Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling • Leadframe-Based New Encapsulated Package - Die Not Exposed - Same Layout Regardless of Die Size • Low Qgd/Qgs Ratio Helps Prevent Shoot-Through • 100 % Rg and UIS Tested • Compliant to RoHS directive 2002/95/EC ID (A)a RDS(on) (Ω)e Silicon Limit 0.0016 at VGS = 10 V 220 60 0.0025 at VGS = 4.5 V 117 60 VDS (V) 20 Package Qg (Typ.) Limit 46 nC Package Drawing www.vishay.com/doc?72945 PolarPAK 10 D 9 G 8 S 7 S 6 D 6 7 8 9 10 APPLICATIONS D D S G • VRM • DC/DC Conversion: Low-Side • Synchronous Rectification D D G D 1 G 2 S S 3 4 Top View D 5 5 4 3 2 1 S Bottom View Top surface is connected to pins 1, 5, 6, and 10 N-Channel MOSFET For Related Documents Ordering Information: SiE808DF-T1-E3 (Lead (Pb)-free) SiE808DF-T1-GE3 (Lead (Pb)-free and Halogen-free) www.vishay.com/ppg?73739 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current ID IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Limit 20 ± 20 220 (Silicon Limit) 60a (Package Limit) 60a 45b, c 36b, c 100 60a 4.3b, c 35 61 125 80 5.2b, c 3.3b, c - 55 to 150 260 Unit V A mJ TC = 25 °C TC = 70 °C PD Maximum Power Dissipation W TA = 25 °C TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range °C Soldering Recommendations (Peak Temperature)d, e Notes: a. Package limited is 60 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73739 S09-1337-Rev. B, 13-Jul-09 www.vishay.com 1 SiE808DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ 10 s Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain Top) Steady State Maximum Junction-to-Case (Source)a, c Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). Symbol RthJA RthJC (Drain) RthJC (Source) Typical 20 0.8 2.2 Maximum 24 1 2.7 Unit °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS ΔVDS/TJ ΔVGS(th)/TJ VGS = 0 V, ID = 250 µA 20 Gate-Source Threshold Voltage Gate-Source Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 25 A VDS = 10 V, ID = 25 A Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge RDS(on) gfs Ciss Coss Crss Qg ID = 250 µA VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 25 A VDS = 10 V, VGS = 4.5 V, ID = 20 A Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg f = 1 MHz Gate Resistance td(on) Turn-On Delay Time VDD = 10 V, RL = 1 Ω tr Rise Time td(off) ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time VDD = 10 V, RL = 1 Ω tr Rise Time ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω td(off) Turn-Off Delay Time tf Fall Time Drain-Source Body Diode Characteristics TC = 25 °C IS Continuous Source-Drain Diode Current ISM Pulse Diode Forward Currenta IS = 10 A VSD Body Diode Voltage trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C ta Reverse Recovery Fall Time tb Reverse Recovery Rise Time Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. 1.5 V 26.5 - 7.3 2.3 mV/°C 3 ± 100 1 10 25 V nA µA A 0.0013 0.0021 95 8800 1600 600 102 46 26 8 0.9 180 215 50 15 25 55 55 10 0.8 56 60 26 30 0.0016 0.0025 Ω S pF 155 70 1.35 270 325 75 25 40 85 85 15 60 100 1.2 85 90 nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73739 S09-1337-Rev. B, 13-Jul-09 SiE808DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 100 VGS = 10 V thru 5 V 16 VGS = 4 V I D - Drain Current (A) I D - Drain Current (A) 80 60 40 12 8 TC = 125 °C 4 20 TC = 25 °C VGS = 3 V 0 0.00 0.05 0.10 0.15 0.20 0.25 TC = - 55 °C 0 1.5 0.30 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 10 000 0.0030 8000 0.0026 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V 0.0022 0.0018 6000 4000 VGS = 10 V 0.0014 Coss 2000 Crss 0 0.0010 0 20 40 60 80 0 100 5 10 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 10 VGS = 4.5 V, 10 V ID = 25 A ID = 20 A 1.4 VDS = 10 V 6 VDS = 16 V 4 (Normalized) 8 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 15 1.2 1.0 0.8 2 0 0 20 40 60 80 100 120 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73739 S09-1337-Rev. B, 13-Jul-09 150 www.vishay.com 3 SiE808DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0050 RDS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 100 TJ = 150 °C 10 TJ = 25 °C ID = 25 A 0.0045 0.0040 0.0035 0.0030 0.0025 125 °C 0.0020 25 °C 0.0015 0.0010 1 0.00 0.2 0.4 0.6 0.8 2 1.0 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 2.8 50 2.6 40 2.4 Power (W) VGS(th) (V) ID = 250 µA 2.2 2.0 1.8 30 20 1.6 10 1.4 1.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* ID - Drain Current (A) 1 ms 10 ms 10 100 ms 1 1s 10 s TA = 25 °C Single Pulse 0.1 DC BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73739 S09-1337-Rev. B, 13-Jul-09 SiE808DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 140 300 120 Power Dissipation (W) I D - Drain Current (A) 250 200 150 100 50 100 80 60 40 20 Package Limited 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73739 S09-1337-Rev. B, 13-Jul-09 www.vishay.com 5 SiE808DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 55 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10-4 10-3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.01 10-4 0.02 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Source Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73739. www.vishay.com 6 Document Number: 73739 S09-1337-Rev. B, 13-Jul-09 Package Information Vishay Siliconix POLARPAK™ OPTION L M4 Product datasheet/information page contain links to applicable package drawing. 10 9 8 7 6 D G S S D M2 M1 M3 D G S 1 2 3 S 4 c D 5 A (Top View) b1 H4 H1 7 S 8 S 9 G b1 H1 10 D K4 6 D θ H3 b2 H2 b3 θ P1 K3 Z P1 T5 θ T3 M3 View A E E1 T2 T4 T1 T3 θ T5 M4 A b4 K4 A1 K3 P1 b4 P1 K2 K1 D1 D 0.26 b5 S 4 b5 S 3 G 2 D 1 b5 View A (Bottom View) 0.13 0.25 DETAIL Z D 5 0.39 A 0.20 0.33 0.58 Document Number: 72945 Revision: 11-Aug-08 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS INCHES DIM MIN. NOM. MAX. MIN. NOM. MAX. A 0.75 0.80 0.85 0.030 0.031 0.033 A1 0.00 - 0.05 0.000 - 0.002 b1 0.48 0.58 0.68 0.019 0.023 0.027 b2 0.41 0.51 0.61 0.016 0.020 0.024 b3 2.19 2.29 2.39 0.086 0.090 0.094 b4 0.89 1.04 1.19 0.035 0.041 0.047 b5 0.23 0.33 0.43 0.009 0.013 0.017 c 0.20 0.25 0.30 0.008 0.010 0.012 D 6.00 6.15 6.30 0.236 0.242 0.248 D1 5.74 5.89 6.04 0.226 0.232 0.238 E 5.01 5.16 5.31 0.197 0.203 0.209 E1 4.75 4.90 5.05 0.187 0.193 0.199 H1 0.23 - - 0.009 - - H2 0.45 - 0.56 0.018 - 0.022 H3 0.31 0.41 0.51 0.012 0.016 0.020 H4 0.45 - 0.56 0.018 - 0.022 K1 4.22 4.37 4.52 0.166 0.172 0.178 K2 1.08 1.13 1.18 0.043 0.044 0.046 K3 1.37 - - 0.054 - - K4 0.24 - - 0.009 - - M1 4.30 4.50 4.70 0.169 0.177 0.185 M2 3.43 3.58 3.73 0.135 0.141 0.147 M3 0.22 - - 0.009 - - M4 0.05 - - 0.002 - - P1 0.15 0.20 0.25 0.006 0.008 0.010 T1 3.48 3.64 4.10 0.137 0.143 0.161 T2 0.56 0.76 0.95 0.022 0.030 0.037 T3 1.20 - - 0.047 - - T4 3.90 - - 0.153 - - T5 0 0.18 0.36 0.000 0.007 0.014 θ 0° 10° 12° 0° 10° 12° ECN: T-08441-Rev. C, 11-Aug-08 DWG: 5946 Notes Millimeters govern over inches. www.vishay.com 2 Document Number: 72945 Revision: 11-Aug-08 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S 7.300 (0.287) 0.510 (0.020) 0.510 (0.020) 0.410 (0.016) 0.955 (0.038) 0.955 (0.038) 4.520 (0.178) 6.310 (0.248) 0.895 (0.035) + 0.895 (0.035) 2.290 (0.090) 0.580 (0.023) 0.580 (0.023) 0.510 (0.020) APPLICATION NOTE Recommended Minimum for PolarPAK Option L and S Dimensions in mm/(Inches) No External Traces within Broken Lines Dot indicates Gate Pin (Part Marking) Return to Index www.vishay.com 6 Document Number: 73491 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000