SISH410DN-T1-GE3

SiSH410DN www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PowerPAK® 1212-8SH • TrenchFET® power MOSFET D D 8 D 7 D 6 5 • 100 % Rg and UIS tested • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 0.9 mm 3.3 mm 1 1 2 S 3 S 4 S G m m 3.3 Top View APPLICATIONS D • DC/DC converter - Notebook - POL Bottom View PRODUCT SUMMARY VDS (V) G 20 RDS(on) max. () at VGS = 10 V 0.0048 RDS(on) max. () at VGS = 4.5 V 0.0063 Qg typ. (nC) ID (A) a Configuration S N-Channel MOSFET 16.7 35 Single ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8 SiSH410DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current Avalanche current Avalanche energy SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C Continuous source-drain diode current TA = 25 °C TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e ID IDM IAS EAS IS PD TJ, Tstg LIMIT 20 ± 20 35 a 35 a 22 b, c 17.8 b, c 60 35 61 43 3.2 b, c 52 33 3.8 b, c 2.4 b, c -55 to +150 260 UNIT V A mJ A W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t  10 s RthJA 24 33 °C/W Maximum junction-to-case (drain) Steady state RthJC 1.9 2.4 Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SH is a leadless package within the PowerPAK 1212-8 package family. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 81 °C/W S18-0698-Rev. B, 09-Jul-2018 Document Number: 79280 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH410DN www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 20 - - V - 19 - - -5.3 - Static Drain-source breakdown voltage VDS temperature coefficient VDS/TJ VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS , ID = 250 μA 1.2 - 2.5 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 20 V, VGS = 0 V - - 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C - - 5 VDS  5 V, VGS = 10 V 40 - - A  VGS = 10 V, ID = 20 A - 0.0040 0.0048 VGS = 4.5 V, ID = 19.4 A - 0.0050 0.0063 VDS = 15 V, ID = 20 A - 70 - - 1600 - - 500 - - 200 - μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 20 A - 27 41 - 16.7 25 VDS = 10 V, VGS = 4.5 V, ID = 20 A - 4.5 - - 3.5 - f = 1 MHz - 1.3 2.6 - 25 40 - 15 25 td(on) tr td(off) VDD = 10 V, RL = 1  ID  10 A, VGEN = 4.5 V, Rg = 1  - 30 45 tf - 15 25 td(on) - 12 20 tr td(off) VDD = 10 V, RL = 1  ID  10 A, VGEN = 10 V, Rg = 1  tf pF nC  ns - 10 15 - 25 40 - 10 15 - - 43 - - 60 - 0.8 1.2 V - 30 45 ns - 21 35 nC - 17 - - 13 - Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 10 A, VGS = 0 V IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test: pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0698-Rev. B, 09-Jul-2018 Document Number: 79280 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH410DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 60 VGS = 10 thru 4 V 50 16 I D - Drain Current (A) I D - Drain Current (A) VGS = 3 V 40 30 20 12 TC = 25 °C 8 4 10 TC = 125 °C VGS = 2 V 0.0 0.5 1.0 1.5 2.0 2.5 TC = -55 °C 0 0.0 0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 Transfer Characteristics Output Characteristics 0.008 2000 Ciss 0.007 1600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) 0.006 VGS = 4.5 V 0.005 VGS = 10 V 0.004 1200 800 Coss 400 0.003 Crss 0.002 0 0 10 20 30 40 50 60 0 8 12 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 20 1.6 10 R DS(on) - On-Resistance (Normalized) ID = 20 A VGS - Gate-to-Source Voltage (V) 4 ID - Drain Current (A) 8 6 VDS = 10 V VDS = 16 V 4 2 ID = 20 A 1.4 VGS = 10 V, 4.5 V 1.2 1.0 0.8 0.6 0 0 6 12 18 Qg - Total Gate Charge (nC) Gate Charge S18-0698-Rev. B, 09-Jul-2018 24 30 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 79280 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH410DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.015 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 20 A TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.012 0.009 TJ = 125 °C 0.006 0.003 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 50 1.8 40 ID = 250 µA Power (W) VGS(th) (V) 1.6 1.4 30 20 1.2 10 1.0 0.8 -50 -25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 600 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 100 I D - Drain Current (A) Limited by RDS(on) (1) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single pulse BVDSS limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) (1) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S18-0698-Rev. B, 09-Jul-2018 Document Number: 79280 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH410DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 100 50 40 Power (W) I D - Drain Current (A) 80 60 Package limited 40 30 20 20 10 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating a 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0698-Rev. B, 09-Jul-2018 Document Number: 79280 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSH410DN www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty cycle, D = 0.02 t1 t2 2. Per unit base = R thJA = 65 °C/W 3. T JM - TA = PDM Z thJA(t) Single pulse 4. Surface mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 Single pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?79280. S18-0698-Rev. B, 09-Jul-2018 Document Number: 79280 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-SWLH and PowerPAK® 1212-8SH A 0.10 C Z D 8 7 6 5 1 2 3 4 D1 5 6 b 4 3 7 8 2 1 K E E1 K1 2x L B 0.10 C 2x e 0.10 M C A B 0.05 M C Pin 1 dot 0.10 C A C 0.08 C A1 A3 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.82 0.90 0.98 0.032 0.035 0.038 A1 0.00 - 0.05 0.000 - 0.002 A3 0.20 ref. 0.008 ref. b 0.25 0.30 0.35 0.010 0.012 0.014 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.15 2.25 2.35 0.085 0.089 0.093 E 3.20 3.30 3.40 0.126 0.130 0.134 E1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc. K 0.76 ref. 0.030 ref. K1 0.41 ref. 0.016 ref. L 0.33 Z 0.43 0.525 ref. 0.026 bsc. 0.53 0.013 0.017 0.021 0.021 ref. ECN: S20-0930-Rev. C, 07-Dec-2020 DWG: 6062 Revision: 07-Dec-2020 Document Number: 76384 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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