SIZ340BDT-T1-GE3

SiZ340BDT www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) D1 3 m m 1 1 2 G1 3 D1 4 D1 D1 Bottom View m 3m Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • PowerPAIR® integrated half-bridge MOSFET power stage • Optimized Qgd/Qgs ratio improves switching characteristics • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D1 • CPU core power CHANNEL-1 CHANNEL-2 30 0.00856 0.01403 3.7 36 30 0.00431 0.00670 8.4 69.3 • Computer / server peripherals G1 • POL N-Channel 1 MOSFET S1/D2 • Synchronous buck converter G2 • Telecom DC/DC N-Channel 2 MOSFET Dual S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 3 x 3 SiZ340BDT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (100 μs pulse width) ID IDM Continuous source drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 100 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d TJ, Tstg CHANNEL-1 CHANNEL-2 30 30 +20, -16 +20, -16 36 69.3 28.8 55.4 16.9 b, c 25.3 b, c b, c 13.5 20.2 b, c 100 150 13.9 25.8 3.1 b, c 3.5 b, c 10 15 5 11 16.7 31 10.7 20 3.7 b, c 4.2 b, c 2.4 b, c 2.7 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 TYP. 27 6 TYP. 24 3.2 MAX. 34 7.5 MAX. 30 4 UNIT t ≤ 10 s RthJA Maximum junction-to-ambient b, f °C/W Maximum junction-to-case (drain) Steady state RthJC Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2 S20-0644-Rev. A, 24-Aug-2020 Document Number: 78132 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340BDT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS Temperature coefficient VGS(th) Temperature coefficient Gate threshold voltage Gate source leakage Zero gate voltage drain current On-state drain current b Drain-source on-state resistance b Forward transconductance b VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 μA Ch-1 30 - - VGS = 0 V, ID = 250 μA Ch-2 30 - - ID = 10 mA Ch-1 - 25.1 ID = 10 mA Ch-2 - 24.3 - ID = 250 μA Ch-1 - 4.0 - ID = 250 μA Ch-2 - 4.6 - VDS = VGS, ID = 250 μA Ch-1 1.1 - 2.4 VDS = VGS, ID = 250 μA Ch-2 1.1 - 2.4 VDS = 0 V, VGS = +20 V / -16 V Ch-1 - - 100 VDS = 0 V, VGS = +20 V / -16 V Ch-2 - - 100 1 VDS = 30 V, VGS = 0 V Ch-1 - - VDS = 30 V, VGS = 0 V Ch-2 - - 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-1 - - 10 VDS = 30 V, VGS = 0 V, TJ = 55 °C Ch-2 - - 10 VDS ≥ 5 V, VGS = 10 V Ch-1 15 - - VDS ≥ 5 V, VGS = 10 V Ch-2 15 - - VGS = 10 V, ID = 10 A Ch-1 - 0.00713 0.00856 VGS = 10 V, ID = 20 A Ch-2 - 0.00359 0.00431 VGS = 4.5 V, ID = 7 A Ch-1 - 0.01122 0.01403 VGS = 4.5 V, ID = 15 A Ch-2 - 0.00529 0.00670 VGS = 10 V, ID = 10 A Ch-1 - 30 - VGS = 10 V, ID = 10 A Ch-2 - 60 - Ch-1 - 550 - V mV/°C V nA μA A Ω S Dynamic a Input capacitance Ciss Output capacitance Coss Channel-1 VDS = 15 V, VGS = 10 V, f = 1 MHz Reverse transfer capacitance Crss Channel-2 VDS = 15 V, VGS = 10 V, f = 1 MHz Crss/Ciss ratio VDS = 15 V, VGS = 10 V, ID = 15 A Total gate charge Qg - 440 - Ch-1 - 30 - Ch-2 - 33 - Ch-1 - 0.052 0.103 Ch-2 - 0.031 0.062 Ch-1 - 8.4 12.6 - 15.7 23.5 - 4.0 6.0 VDS = 15 V, VGS = 4.5 V, ID = 20 A Ch-2 - 7.3 11 Ch-1 - 2.2 - Ch-2 - 3.9 - Ch-1 - 1.0 - Ch-2 - 1.7 - Ch-1 - 0.9 - Ch-2 - 1.4 - Ch-1 0.2 1 2 Ch-2 0.2 1 2 Qgd Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 20 A S20-0644-Rev. A, 24-Aug-2020 - Ch-2 Ch-2 Gate-drain charge Rg - 235 Ch-1 Qgs Gate resistance 1065 - VDS = 15 V, VGS = 10 V, ID = 20 A Gate-source charge Qoss - Ch-1 VDS = 15 V, VGS = 4.5 V, ID = 15 A Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 15 A Output charge Ch-2 VDS = 15 V, VGS = 0 V f = 1 MHz pF nC Ω Document Number: 78132 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340BDT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. 20 UNIT Dynamic a Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time Turn-on delay time Channel-2 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf td(on) Rise time Turn-off delay time Channel-1 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tr td(off) Fall time Channel-1 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω Channel-2 VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf Ch-1 - 8 Ch-2 - 12 24 Ch-1 - 6 12 Ch-2 - 7 14 Ch-1 - 18 36 Ch-2 - 22 33 Ch-1 - 5 10 Ch-2 - 7 14 Ch-1 - 15 25 Ch-2 - 20 40 Ch-1 - 450 675 Ch-2 - 230 345 Ch-1 - 10 20 Ch-2 - 20 40 Ch-1 - 14 28 Ch-2 - 13 26 Ch-1 - - 13.9 Ch-2 - - 25.8 Ch-1 - - 100 150 ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulse diode forward current (t = 100 μs) Body diode voltage TC = 25 °C IS ISM VSD Ch-2 - - IS = 8 A, VGS = 0 V Ch-1 - 0.83 1.2 IS = 10 A, VGS = 0 V Ch-2 - 0.80 1.2 Ch-1 - 21 42 Ch-2 - 15 68 Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Channel-1 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Ch-1 - 11 22 Ch-2 - 5 10 Reverse recovery fall time ta Channel-2 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C Ch-1 - 11 - Ch-2 - 7 - Ch-1 - 10 - Ch-2 - 8 - Reverse recovery rise time tb A V ns nC ns Notes a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0644-Rev. A, 24-Aug-2020 Document Number: 78132 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340BDT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 80 10000 VGS = 10 V thru 5 V 1st line 2nd line 60 VGS = 4 V 40 100 60 1000 40 1st line 2nd line 1000 2nd line ID - Drain Current (A) VGS = 5 V 80 2nd line ID - Drain Current (A) TC = -55 °C TC = 125 °C 100 20 TC = 25 °C 20 VGS = 3 V 0 1.0 2.0 3.0 10 0 10 0 0 4.0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 5 Axis Title 0.04 10000 1000 10000 0.02 VGS = 10 V 100 0.01 20 40 60 80 100 Crss 10 0 100 5 10 25 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance Axis Title 1st line 2nd line 4 VDS = 8 V, 15 V, 24 V 100 2 10 0 4 6 8 10 2nd line RDS(on) - On-Resistance (Normalized) 1000 6 10000 1.6 8 2 30 Axis Title 10000 ID = 15 A 2nd line VGS - Gate-to-Source Voltage (V) 20 ID - Drain Current (A) 10 0 15 VGS = 10 V, 10 A 1.4 1000 1.2 1st line 2nd line 0 100 10 10 0 1000 Coss 1st line 2nd line 1000 VGS = 4.5 V 2nd line C - Capacitance (pF) 0.03 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss VGS = 4.5 V, 7 A 1.0 100 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S20-0644-Rev. A, 24-Aug-2020 Document Number: 78132 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340BDT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 0.05 10000 100 1000 TJ = 150 °C TJ = 25 °C 1 100 0.1 0.04 1000 0.03 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 10 A 0.02 TJ = 125 °C 100 0.01 TJ = 25 °C 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 50 10000 2.0 ID = 250 μA 40 Power (W) 1000 1.6 1st line 2nd line 2nd line VGS(th) (V) 1.8 1.4 30 20 100 1.2 10 1.0 10 -50 -25 0 25 50 75 0 0.001 100 125 150 TJ - Junction Temperature (°C) 0.01 0.1 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited 1000 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 μs 1 ms 1 Limited by RDS(on) 10 ms a 100 ms 10s, 1s 0.1 100 DC TA = 25 °C, single pulse BVDSS limited 0.01 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S20-0644-Rev. A, 24-Aug-2020 Document Number: 78132 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340BDT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 30 1000 1st line 2nd line 2nd line ID - Drain Current (A) 40 20 100 10 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 20 2.2 15 1.7 Power (W) Power (W) Current Derating a 10 5 1.1 0.6 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power, Junction-to-Case 150 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power, Junction-to-Ambient Note b. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0644-Rev. A, 24-Aug-2020 Document Number: 78132 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340BDT www.vishay.com Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 Notes: 0.2 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 69 °C/W 3. TJM - TA = PDMZthJA(t) Single pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.05 0.02 Single pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case S20-0644-Rev. A, 24-Aug-2020 Document Number: 78132 7 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340BDT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 100 10000 10000 TC = -55 °C VGS = 10 V thru 5 V 80 1st line 2nd line VGS = 4 V 40 100 20 1000 60 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 2nd line ID - Drain Current (A) 80 TC = 125 °C 40 100 TC = 25 °C 20 VGS = 3 V 10 0 0 1.0 2.0 3.0 0 1 2 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 10000 10 000 10000 0.010 Ciss 1st line 2nd line VGS = 10 V 100 100 100 Crss 0.002 10 0 20 40 60 80 10 10 100 0 ID - Drain Current (A) 5 10 15 Axis Title 1st line 2nd line 4 100 VDS = 8 V, 15 V, 24 V 2 10 0 8 10 12 14 16 Qg - Total Gate Charge (nC) Gate Charge S20-0644-Rev. A, 24-Aug-2020 18 20 2nd line RDS(on) - On-Resistance (Normalized) 1000 6 10000 1.6 8 6 30 Axis Title 10000 ID = 20 A 4 25 Capacitance 10 2 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 0 1000 Coss VGS = 10 V, 20 A 1.4 1000 1.2 1st line 2nd line 0.004 1000 1st line 2nd line 1000 VGS = 4.5 V 0.006 2nd line C - Capacitance (pF) 0.008 0 2nd line VGS - Gate-to-Source Voltage (V) 3 VDS - Drain-to-Source Voltage (V) Axis Title 2nd line RDS(on) - On-Resistance (Ω) 10 0 4.0 VGS = 4.5 V, 15 A 1.0 100 0.8 10 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 78132 8 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340BDT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 0.02 10000 100 10000 1000 TJ = 150 °C TJ = 25 °C 1 100 0.1 0.015 1000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 10 1st line 2nd line 2nd line IS - Source Current (A) ID = 10 A 0.01 TJ = 125 °C 100 0.005 TJ = 25 °C 0.01 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 50 Axis Title 10000 2.0 ID = 250 μA 40 Power (W) 1000 1.6 1st line 2nd line 2nd line VGS(th) (V) 1.8 1.4 30 20 100 10 1.2 1.0 0 0.001 10 -50 -25 0 25 50 75 100 125 150 0.01 0.1 TJ - Junction Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 10000 1000 IDM limited 1000 100 μs 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 10 ms 1 Limited by RDS(on) a 100 ms 100 10 s, 1 s 0.1 TA = 25 °C, single pulse DC BVDSS limited 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S20-0644-Rev. A, 24-Aug-2020 Document Number: 78132 9 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340BDT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 60 1000 1st line 2nd line 2nd line ID - Drain Current (A) 80 40 100 20 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating a 28.5 2.1 Power (W) 2.8 Power (W) 38 19 9.5 1.4 0.7 0.0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power, Junction-to-Case 150 0 25 50 75 100 125 TA - Ambient Temperature (°C) 150 Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S20-0644-Rev. A, 24-Aug-2020 Document Number: 78132 10 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiZ340BDT www.vishay.com Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 64 °C/W 3. TJM - TA = PDMZthJA(t) Single pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.05 0.02 Single pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?78132. S20-0644-Rev. A, 24-Aug-2020 Document Number: 78132 11 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAIR® 3 x 3 Case Outline D 8 7 6 A A1 5 K2 D2 5 6 K2 7 8 E1 K L d 0.10 C 2X * 1 2 3 d 0.10 C 2X 0.10 4 0.15 4 3 2 1 e b b1 0.10 C A f E2 K1 E 9 Note * Indicates pin #1 orientation (optional) c C d 0.08 C MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 0.05 0.000 b 0.35 0.40 0.45 0.014 0.016 0.018 b1 0.20 0.25 0.38 0.008 0.010 0.015 C 0.18 0.20 0.23 0.007 0.008 0.009 D 2.90 3.00 3.10 0.114 0.118 0.122 D2 2.35 2.40 2.45 0.093 0.094 0.096 E 2.90 3.00 3.10 0.114 0.118 0.122 E1 0.94 0.99 1.04 0.037 0.039 0.041 E2 0.47 0.52 0.57 0.019 0.020 0.022 e 0.002 0.65 BSC 0.026 BSC K 0.25 typ. 0.010 typ. K1 0.35 typ. 0.014 typ. K2 0.30 typ. L 0.27 0.32 0.012 typ. 0.37 0.011 0.013 0.015 ECN: T12-0347-Rev. C, 18-Jun-12 DWG: 5998 Revison: 18-Jun-12 1 Document Number: 67698 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAIR® 3 x 3 0.450 0.650 (0.018) (0.026) 0.450 (0.018) 1.036 2.450 (0.096) 0.084 (0.003) (0.041) 0.209 (0.008) 0.306 (0.012) 0.562 (0.022) (0.063) 1.611 0.390 (0.015) 1.200 (0.047) Recommended PAD for PowerPAIR 3 x 3 Dimensions in millimeters (inches) Keep-Out 3.5 mm x 3.5 mm for non terminating traces Document Number: 63294 Revision: 25-May-11 www.vishay.com 1 This document is subject to change without notice. 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