SQ2315ES-T1_GE3

SQ2315ES www.vishay.com Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 °C MOSFET FEATURES SOT-23 (TO-236) • TrenchFET® power MOSFET • AEC-Q101 qualified c D 3 • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 S S 1 G Top View G Marking Code: 8D PRODUCT SUMMARY VDS (V) -12 RDS(on) (Ω) at VGS = -4.5 V 0.050 RDS(on) (Ω) at VGS = -2.5 V 0.068 RDS(on) (Ω) at VGS = -1.8 V 0.100 ID (A) P-Channel MOSFET D -5 Configuration Single ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and halogen-free SQ2315ES (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -12 Gate-source voltage VGS ±8 Continuous drain durrent TC = 25 °C TC = 125 °C Continuous source current (diode conduction) Pulsed drain current IS a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a ID L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range V -5 -3 -2.5 IDM -20 IAS -11 EAS 6 PD UNIT 2 0.67 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 175 RthJF 75 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-foot (drain) PCB mount b °C/W Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. When mounted on 1" square PCB (FR4 material) c. Parametric verification ongoing. S21-1074-Rev. E, 15-Nov-2021 Document Number: 71507 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2315ES www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS = 0 V, ID = -250 μA -12 - - VGS(th) VDS = VGS, ID = -250 μA -0.45 - -1 VDS = 0 V, VGS = ± 8 V IGSS - - ± 100 VGS = 0 V VDS = -12 V - - -1 - - -50 Zero gate voltage drain current IDSS VGS = 0 V VDS = -12 V, TJ = 125 °C VGS = 0 V VDS = -12 V, TJ = 175 °C - - -150 On-state drain current a ID(on) VGS = -4.5 V VDS ≤ -5 V -10 - - VGS = -4.5 V ID = -3.5 A - 0.042 0.050 Drain-source on-state resistance a Forward transconductance b Dynamic RDS(on) gfs VGS = -4.5 V ID = -3.5 A, TJ = 125 °C - - 0.066 VGS = -4.5 V ID = -3.5 A, TJ = 175 °C - - 0.075 VGS = -2.5 V ID = -3 A - 0.059 0.068 VGS = -1.8 V ID = -2 A - 0.084 0.100 - 7 - - 695 870 - 265 335 VDS = -5 V, ID = -1.6 A V nA μA A Ω S b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss - 190 240 Total gate charge c Qg - 9 13 - 1 - - 2.4 - 2.4 4.9 12.3 td(on) - 17 26 tr - 19 29 - 28 42 - 13 20 Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Rg Turn-on delay time c Rise time c Turn-off delay time c Fall time c td(off) VGS = 0 V VGS = -4.5 V VDS = -6 V, f = 1 MHz VDS = -6 V, ID = -3.85 A f = 1 MHz VDD = -6 V, RL = 1.6 Ω ID ≅ -3.85 A, VGEN = -4.5 V, Rg = 1 Ω tf pF nC Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD IF = -2 A, VGS = 0 V - - -20 A - -0.8 -1.2 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-1074-Rev. E, 15-Nov-2021 Document Number: 71507 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2315ES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 15 12 VGS = 5 V thru 2 V TC = 25 °C 12 ID - Drain Current (A) ID - Drain Current (A) 10 8 6 VGS = 1.5 V 4 9 TC = - 55 °C TC = 125 °C 6 3 2 VGS = 1 V 0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 5 0 0.6 0.09 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 3.0 1000 0.12 VGS = 1.8 V 0.06 VGS = 2.5 V Ciss 800 600 Coss 400 Crss 0.03 VGS = 4.5 V 200 0 0 2 4 6 8 ID - Drain Current (A) 10 12 0 2 4 6 8 10 12 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 1.6 6 RDS(on) - On-Resistance (Normalized) VDS = 6 V ID = 3.85 A VGS - Gate-to-Source Voltage (V) 2.4 1200 0.15 5 4 3 2 1 0 1.8 Transfer Characteristics Output Characteristics 0.00 1.2 VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge S21-1074-Rev. E, 15-Nov-2021 10 12 ID = 3.5 A 1.4 1.2 VGS = 4.5 V VGS = 2.5 V 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 71507 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2315ES www.vishay.com Vishay Siliconix 100 0.25 10 0.20 1 RDS(on) - On-Resistance (Ω) IS - Source Current (A) TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) TJ = 150 °C TJ = 25 °C 0.1 0.10 TJ = 150 °C 0.05 0.01 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 0.3 - 13.5 VDS - Drain-to-Source Voltage (V) - 13.0 ID = 250 μA 0.1 ID = 5 mA 0.0 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 1 2 3 4 5 On-Resistance vs. Gate-to-Source Voltage 0.4 0.2 TJ = 25 °C VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage VGS(th) Variance (V) 0.15 150 - 14.0 - 14.5 - 15.0 - 15.5 - 16.0 - 50 175 ID = 1 mA - 25 TJ - Junction Temperature (°C) 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature IDM Limited ID - Drain Current (A) 10 Limited by RDS(on)* 100 μs 1 ms 1 10 ms 100 ms 1 s, 10 s, DC 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S21-1074-Rev. E, 15-Nov-2021 Document Number: 71507 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2315ES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJF = 175 °C/W 0.02 3. TJM - TF = PDMZthJF (t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71507. S21-1074-Rev. E, 15-Nov-2021 Document Number: 71507 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000