SQA413CEJW-T1_GE3

SQA413CEJW www.vishay.com Vishay Siliconix Automotive P-Channel 20 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SC-70W-6L Single S 4 D 5 • TrenchFET® power MOSFET D 6 • AEC-Q101 qualified • Wettable flank terminals • 100 % Rg and UIS tested 2. 05 m m 1 m 5m 2.0 Top View S 7 3 G 2 D 1 D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Bottom View S Marking Code: Q5XXXX PRODUCT SUMMARY G VDS (V) -20 RDS(on) (Ω) at VGS = -4.5 V 0.0380 RDS(on) (Ω) at VGS = -2.5 V 0.0624 ID (A) Configuration D P-Channel MOSFET -7.5 Single ORDERING INFORMATION Package PowerPAK SC-70W-6L Lead (Pb)-free and halogen-free SQA413CEJW (for detailed order number please see www.vishay.com/doc?79776) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage SYMBOL VDS LIMIT -20 Gate-source voltage f VGS ± 12 Continuous drain current a TC = 25 °C TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID -7.5 IS -7.5 -30 IAS -11 EAS 6.05 TJ, Tstg Soldering recommendations (peak temperature) d, e V -7.5 IDM PD UNIT 13.6 4.5 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 90 RthJF 11 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70W-6L is a leadless package and features wettable flank terminals. The end of the lead terminal is plated with tin e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Not intended for continuous use with positive gate voltage > 3.0 V S21-1237-Rev. A, 27-Dec-2021 Document Number: 63098 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQA413CEJW www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0, ID = -250 μA -20 - - VGS(th) VDS = VGS, ID = -250 μA -0.6 -1.0 -1.3 VDS = 0 V, VGS = ± 12 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = -20 V - - -1 VGS = 0 V VDS = -20 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -20 V, TJ = 175 °C - - -150 VGS = -4.5 V VDS ≥ 5 V -7.5 - - VGS = -4.5 V ID = -4.5 A - 0.0308 0.0380 VGS = -4.5 V ID = -4.5 A, TJ = 125 °C - - 0.0518 VGS = -4.5 V ID = -4.5 A, TJ = 175 °C - - 0.0586 VGS = -2.5 V ID = -3 A - 0.0506 0.0624 - 14 - - 938 1350 - 155 225 - 133 190 - 10.1 16 - 2.4 - - 3.0 - 1.6 3.2 4.8 - 13 20 - 19 29 - 24 36 - 7 12 VDS = -10 V, ID = -4 A V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VGS = -4.5 V VDS = -10 V, f = 1 MHz VDS = -10 V, ID = -8 A f = 1 MHz td(on) tr td(off) VDD = -10 V, RL = 4 Ω ID ≅ -2.5 A, VGEN = -4.5 V, Rg = 1 Ω tf pF nC Ω ns Source-Drain Diode Ratings and Characteristics Pulsed current a ISM Forward voltage VSD IF = -4.5 A, VGS = 0 - - -30 A - -0.83 -1.2 V Body diode reverse recovery time trr - 10 20 ns Body diode reverse recovery charge Qrr - 4 8 nC Reverse recovery fall time ta - 5 - Reverse recovery rise time tb - 5 - IRM(REC) - -0.7 - Body diode peak reverse recovery current IF = -2 A, di/dt = 100 A/μs ns A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-1237-Rev. A, 27-Dec-2021 Document Number: 63098 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQA413CEJW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 50 25 10000 10000 VGS = 4.5 V thru 4.0 V 40 1st line 2nd line VGS = 3.0 V 20 100 VGS = 2.5 V 10 6 8 TC = -55 °C 0 10 4 100 TC = 25 °C TC = 125 °C 0 2 10 5 VGS = 2.0 V 0 1000 15 1st line 2nd line 2nd line ID - Drain Current (A) 1000 30 2nd line ID - Drain Current (A) 20 VGS = 3.5 V 10 0 1 2 3 10 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 Axis Title 30 0.15 18 TC = 125 °C 12 6 0 0.12 1000 0.09 VGS = 2.5 V 0.06 100 VGS = 4.5 V 0.03 0 0 4 8 12 16 20 10 0 5 10 Transconductance On-Resistance vs. Drain Current Crss 100 10 10 4 8 12 16 20 4.0 ID = 8 A VDS = 10 V 3.5 1000 3.0 1st line 2nd line 1st line 2nd line 1000 Coss 10000 4.5 2nd line VGS - Gate-to-Source Voltage (V) Ciss 1000 2.5 2.0 1.5 100 1.0 0.5 0 10 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S21-1237-Rev. A, 27-Dec-2021 25 Axis Title 10000 0 20 ID - Drain Current (A) Axis Title 100 15 ID - Drain Current (A) 10 000 2nd line C - Capacitance (pF) 1st line 2nd line 2nd line gfs - Transconductance (S) 2nd line RDS(on) - On-Resistance (Ω) TC = -55 °C TC = 25 °C 24 10000 15 Document Number: 63098 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQA413CEJW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 0.6 10000 10000 VGS = 4.5 V ID = 4 A ID = -250 μA 0.4 VGS = 2.5 V 1.0 100 0.8 1000 0.2 ID = -5 mA 0 100 -0.2 0.6 -0.4 10 -50 -25 0 25 50 10 -50 -25 75 100 125 150 175 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Threshold Voltage Axis Title Axis Title -24 0.20 1000 1st line 2nd line 0.15 0.10 100 TJ = 150 °C 0.05 TJ = 25 °C 0 2nd line VDS - Drain-to-Source Voltage (V) 10000 ID = -1 mA -25 1000 -26 -27 100 -28 -29 10 0 10000 1st line 2nd line 0.25 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line 1000 1.2 2nd line VGS(th) - Variance (V) 1.4 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 1.6 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 100 10000 100 10000 100 TJ = 25 °C 0.1 10 100 us ID limited 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on) a 100 0.1 TC = 25 °C, single pulse 0.01 1000 1st line 2nd line TJ = 150 °C 1 2nd line ID - Drain Current (A) 1000 1st line 2nd line 2nd line IS - Source Current (A) IDM limited 10 0.01 0.01 BVDSS limited 10 0.1 1 10 VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V) Source-Drain Diode Forward Voltage Safe Operating Area 100 Note a. VGS > minimum VGS at which RDS(on) is specified S21-1237-Rev. A, 27-Dec-2021 Document Number: 63098 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQA413CEJW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty cycle, D = 0.02 t1 t2 2. Per unit base = R thJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) Single pulse 0.01 10-4 10-3 4. Surface mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63098. S21-1237-Rev. A, 27-Dec-2021 Document Number: 63098 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SC70W-6L SIDEWETTABLE e1 2x A D K6 4x 1 A B Pin 1 index e 4x L1 2 3 L K E K5 E2 E1 K2 D1 K1 K3 D2 K4 K 2x L 6 Top view b1 6x 5 b 6x 4 0.1 M C A B 0.05 M C Bottom view 2x 0.10 C 0.10 C C 0.05 C A1 A2 See detail Z DIM. MIN. 0.70 0.00 0.10 0.25 0.15 0.20 1.95 0.88 0.20 1.95 1.06 0.82 A A1 A2 b b1 C D D1 D2 E E1 E2 e e1 K K1 K2 K3 K4 K5 K6 L 0.15 L1 ECN: C19-1644-Rev. A, 10-Jan-2020 DWG: 6076 0.05 C Detail Z (2:1) C MILLIMETERS NOM. 0.80 0.02 0.30 0.20 0.25 2.05 0.98 0.25 2.05 1.16 0.87 0.65 BSC 1.30 BSC 0.20 typ. 0.47 typ. 0.23 typ. 0.18 typ. 0.35 typ. 0.35 typ. 0.38 typ. 0.25 0.10 MAX. 0.90 0.05 0.35 0.23 0.30 2.15 1.08 0.30 2.15 1.26 0.92 MIN. 0.027 0.000 0.004 0.010 0.006 0.008 0.077 0.035 0.008 0.077 0.042 0.032 0.35 - 0.006 - INCHES NOM. 0.031 0.001 0.012 0.008 0.010 0.081 0.039 0.010 0.081 0.046 0.034 0.026 BSC 0.051 BSC 0.008 typ. 0.019 typ. 0.009 typ. 0.007 typ. 0.014 typ. 0.014 typ. 0.015 typ. 0.010 0.004 MAX. 0.035 0.002 0.014 0.009 0.012 0.085 0.043 0.012 0.085 0.050 0.036 0.014 - Notes • Package outline exclusive of mold flash and metal burr • Package outline inclusive of plating Document Number: 77413 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 10-Jan-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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