SUP40P10-43-GE3

New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100 ID (A)c RDS(on) (Ω) 0.043 at VGS = - 10 V - 36 0.048 at VGS = - 4.5 V - 34.4 Qg (Typ.) 54 nC APPLICATIONS • LCD Inverter - Backlighting TO-220AB S G Drain connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUP40P10-43-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)c TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °C ID - 16 - 40 IAS - 35 PD V - 36 IDM EAS Unit 61 125b 2.0 A mJ W TJ, Tstg - 55 to 150 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient Free Air RthJA 62 Junction-to-Case RthJC 1.0 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. Document Number: 65458 S09-2035-Rev. A, 05-Oct-09 www.vishay.com 1 New Product SUP40P10-43 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDS VGS = 0 V, ID = - 250 µA - 100 Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -1 VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 109 ΔVGS(th)/TJ ID = - 250 µA 5.9 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = - 100 V, VGS = 0 V -1 Zero Gate Voltage Drain Current IDSS VDS = - 100 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 100 V, VGS = 0 V, TJ = 150 °C - 200 Drain-Source Breakdown Voltage VGS(th) Temperature Coefficient On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V a Forward Transconductance RDS(on) - 40 nA µA A 0.036 0.043 VGS = - 10 V, ID = - 10 A, TJ = 125 °C 0.078 VGS = - 10 V, ID = - 10 A, TJ = 150 °C 0.088 gfs V mV/°C ± 100 VGS = - 10 V, ID = - 10 A Drain-Source On-State Resistancea -3 VGS = - 4.5 V, ID = - 8 A 0.040 VDS = - 15 V, ID = - 10 A 38 Ω 0.048 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c Gate-Source Charge Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec tr Turn-Off Delay Timec td(off) Fall Timec Turn-On Delay Time c Rise Timec Turn-Off Delay Timec Fall Timec 230 VDS = - 50 V, VGS = - 10 V, ID = - 10 A 106 160 54 81 pF 175 nC 14 VDS = - 50 V, VGS = - 4.5 V, ID = - 10 A 26 f = 1.0 MHz td(on) c Rise Time 4600 VGS = 0 V, VDS = - 50 V, f = 1 MHz VDD = - 50 V, RL = 6.3 Ω ID ≅ - 8 A, VGEN = - 10 V, Rg = 1.0 Ω 0.8 4 8 15 25 20 30 110 165 tf 100 150 td(on) 42 65 tr td(off) VDD = - 50 V, RL = 6.3 Ω ID ≅ 8 A, VGEN = - 4.5 V, Rg = 1.0 Ω tf 160 240 100 150 100 150 Ω ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS - 40 Pulsed Current ISM - 40 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 10 A, VGS = 0 V trr IRM(REC) Qrr IF = - 8 A, dI/dt = 100 A/µs A - 0.8 - 1.5 V 60 90 ns -5 - 7.5 A 150 225 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65458 S09-2035-Rev. A, 05-Oct-09 New Product SUP40P10-43 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 40 35 VGS = 10 V thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 30 25 20 15 12 8 TA = 125 °C 10 3V 4 25 °C 5 0 0.0 - 55 °C 2V 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.044 7000 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 6000 0.042 VGS = 4.5 V 0.040 0.038 VGS = 10 V 5000 Ciss 4000 3000 2000 0.036 1000 0.034 Coss Crss 0 0 5 10 15 20 25 30 35 0 10 ID - Drain Current (A) 20 40 50 60 70 80 125 150 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.3 ID = 9.2 A ID = 9.2 A 2.0 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 30 VDS = 50 V 6 VDS = 80 V 4 2 1.7 VGS = 10 V, 4.5 V 1.4 1.1 0.8 0 0 20 40 60 80 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65458 S09-2035-Rev. A, 05-Oct-09 100 120 0.5 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SUP40P10-43 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.08 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 40 TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.07 TA = 125 °C 0.06 0.05 0.04 TA = 25 °C 0.03 0.02 0.2 0.4 0.6 0.8 1.0 2 1.2 3 6 7 8 9 10 On-Resistance vs. Gate-to-Source Voltage 2.3 100 IC - Peak Avalanche Current (A) 2.1 V GS(th) (V) 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.9 ID = 250 µA 1.7 1.5 1.3 1.1 - 50 4 - 25 0 25 50 75 100 125 10 TA 1 0.000001 150 L 0.00001 TJ - Temperature (°C) 0.0001 0.001 0.01 TA - Time In Avalanche (s) Threshold Voltage 100 IA BV - V DD Single Pulse Avalanche Capability Limited by RDS(on)* 10 µs 100 µs ID - Drain Current (A) 10 1 ms 10 ms DC 1 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65458 S09-2035-Rev. A, 05-Oct-09 New Product SUP40P10-43 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 180 150 120 Power (W) ID - Drain Current (A) 40 30 20 90 60 10 30 0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65458. Document Number: 65458 S09-2035-Rev. A, 05-Oct-09 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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