VS-150EBU04

VS-150EBU04 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt® FEATURES 1 • Ultrafast recovery time • 175 °C max. operating junction temperature 2 Cathode • Screw mounting only Anode • Designed and qualified JEDEC®-JESD 47 according to • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerTab® BENEFITS LINKS TO ADDITIONAL RESOURCES • Reduced RFI and EMI • Higher frequency operation 3D 3D • Reduced snubbing 3D Models • Reduced parts count DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 150 A VR 400 V VF at IF 0.9 V trr (typ.) See recovery table TJ max. 175 °C Package PowerTab® Circuit configuration Single These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. MECHANICAL DATA Case: PowerTab® Molding compound meets UL 94 V-0 flammability rating Terminal: nickel plated, screwable ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current SYMBOL TEST CONDITIONS MAX. UNITS 400 V VR IF(AV) TC = 104 °C 150 Single pulse forward current IFSM TC = 25 °C 1500 Maximum repetitive forward current IFRM Square wave, 20 kHz 300 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS UNIT S MIN. TYP. MAX. 400 - - IF = 150 A - 1.07 1.3 IF = 150 A, TJ = 175 °C - 0.9 1.1 IF = 150 A, TJ = 125 °C - 0.96 1.17 VR = VR rated - - 50 μA TJ = 150 °C, VR = VR rated - - 4 mA IR = 200 μA V Reverse leakage current IR Junction capacitance CT VR = 400 V - 100 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Revision: 07-Dec-2021 Document Number: 93003 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU04 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr Peak recovery current TYP. MAX. - - 60 TJ = 25 °C - 93 - TJ = 125 °C - 172 - - 11 - - 20 - IF = 150 A VR = 200 V dIF/dt = 200 A/μs TJ = 25 °C IRRM Reverse recovery charge MIN. IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V TJ = 125 °C Qrr UNITS ns A TJ = 25 °C - 490 - TJ = 125 °C - 1740 - MIN. TYP. MAX. - 0.22 0.29 - 0.2 - - - 5.02 g - 0.18 - oz. 1.2 (10) - 2.4 (20) N·m (lbf · in) nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, junction to heatsink RthCS TEST CONDITIONS K/W Mounting surface, flat, smooth, and greased Weight Mounting torque Case style PowerTab® 150EBU04 1000 1000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 0.2 UNITS TJ = 175 ˚ C 100 125 ˚ C 10 1 25 ˚ C 0.1 0.01 0.001 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 0 100 200 300 400 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 07-Dec-2021 Document Number: 93003 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU04 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 10 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 PDM t1 Single Pulse (Thermal Resistance) t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 . 1 t1 - Rectangular Pulse Duration (s) 180 300 160 250 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 140 DC 120 100 Square wave (D = 0.50) Rated VR applied 80 60 RMS Limit 200 150 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D DC = 0.20 D = 0.50 DC 100 50 see note (1) 40 0 0 50 100 150 200 250 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 50 100 150 200 250 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR Revision: 07-Dec-2021 Document Number: 93003 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU04 www.vishay.com 250 Vishay Semiconductors 5000 VR = 200 V TJ = 125 °C TJ = 25 °C IF = 150 A IF = 75 A VR = 200 V TJ = 125 TJ = 25 4500 4000 200 Qrr (nC) trr (ns) 3500 150 IF = 150 A IF = 75 A 3000 2500 2000 1500 100 1000 500 0 50 100 100 1000 1000 dIFdt (A/μs) dIFdt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 07-Dec-2021 Document Number: 93003 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU04 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 150 E B U 04 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (150 = 150 A) 3 - Single diode 4 - PowerTab® (ultrafast / hyperfast only) 5 - Ultrafast recovery 6 - Voltage rating (04 = 400 V) ORDERING INFORMATION PREFERRED P/N VS-150EBU04 QUANTITY PER T/R 25 MINIMUM ORDER QUANTITY 375 PACKAGING DESCRIPTION Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95370 Application note www.vishay.com/doc?95179 Revision: 07-Dec-2021 Document Number: 93003 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® 15.90 (0.62) 15.60 (0.61) 11.90 (0.47) 12.40 (0.49) Lead 1 Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) Lead 2 4.95 (0.19) 4.75 (0.18) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.20 (0.20) 4.95 (0.19) 3.15 (0.12) 3.00 (0.11) 0.60 (0.02) 0.40 (0.01) 5.45 REF. (0.21 REF.) 39.95 (1.57) 39.55 (1.56) “G” see note 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 1.35 (0.05) 1.20 (0.04) 18.50 (0.73) 17.85 (0.70) 4.70 (0.19) 4.50 (0.18) 8.80 (0.35) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Note: Outline conform to JEDEC® TO-275, except for dimension “G” only Revision: 10-Jun-2021 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000