VS-150EBU02HF4

VS-150EBU02HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt® FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode Anode • AEC-Q101 qualified • PowerTab® package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerTab® BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing PRIMARY CHARACTERISTICS • Reduced parts count IF(AV) 150 A VR 200 V VF at IF 0.77 V trr (typ.) See recovery table DESCRIPTION/APPLICATIONS TJ max. 175 °C Package PowerTab® Circuit configuration Single These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS MAX. UNITS 200 V VR Continuous forward current IF(AV) TC = 116 °C 150 Single pulse forward current IFSM TC = 25 °C 1600 Maximum repetitive forward current IFRM Square wave, 20 kHz 380 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL TEST CONDITIONS MIN. TYP. MAX. VBR, VR IR = 100 μA 200 - - IF = 150 A - 0.94 1.10 IF = 150 A, TJ = 175 °C - 0.77 0.88 VR = VR rated - - 50 μA TJ = 150 °C, VR = VR rated - - 2 mA VF UNITS V Reverse leakage current IR Junction capacitance CT VR = 200 V - 180 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Revision: 30-Jan-18 Document Number: 93999 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02HF4 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge MIN. TYP. MAX. TJ = 25 °C TEST CONDITIONS - 48 - TJ = 125 °C - 88 - - 5 - - 12 - TJ = 25 °C - 120 - TJ = 125 °C - 520 - MIN. TYP. MAX. - - 0.35 - 0.2 - - - 5.02 g - 0.18 - oz. 1.2 (10) - 2.4 (20) N·m (lbf · in) TJ = 25 °C TJ = 125 °C Qrr IF = 150 A VR = 160 V dIF/dt = 200 A/μs UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, case to heatsink RthCS TEST CONDITIONS K/W Mounting surface, flat, smooth and greased Weight Mounting torque Case style PowerTab® Marking device 150EBU02H 1000 1000 TJ = 175 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) UNITS 100 TJ = 175 °C TJ = 125 °C TJ = 25 °C 10 1 100 125 °C 10 1 25 °C 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 50 100 150 200 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 30-Jan-18 Document Number: 93999 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02HF4 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 PDM t1 t2 Notes: Single Pulse (Thermal Resistance) 1. Duty factor D = t1/ t2 2. Peak TJ = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) 250 180 RMS Limit 160 140 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics DC 120 100 Square wave (D = 0.50) 80 % Rated VR applied 80 200 150 D= D= D= D= D= D= DC 100 50 0.01 0.02 0.05 0.10 0.20 0.50 0 60 0 50 100 150 200 250 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 50 100 150 200 250 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: 30-Jan-18 Document Number: 93999 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02HF4 www.vishay.com Vishay Semiconductors 900 110 IF = 150 A IF = 75 A 90 700 80 600 70 60 50 40 30 20 100 Vr = 160 V TJ = 125 °C TJ = 25 °C 800 Qrr (nC) trr (ns) 100 IF = 150 A IF = 75 A 500 400 300 200 VR 160 V TJ = 125°C .... TJ = 25°C ___ 100 0 100 1000 1000 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 30-Jan-18 Document Number: 93999 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02HF4 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 150 E B U 02 H F4 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (150 = 150 A) 3 - Single diode 4 - PowerTab® 5 - Ultrafast recovery 6 - Voltage rating (02 = 200 V) 7 - H = AEC-Q101 qualified 8 - F4 = RoHS-compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-150EBU02HF4 25 375 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95467 Application note www.vishay.com/doc?95179 SPICE model www.vishay.com/doc?96503 Revision: 30-Jan-18 Document Number: 93999 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® 15.90 (0.62) 15.60 (0.61) 11.90 (0.47) 12.40 (0.49) Lead 1 Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) Lead 2 4.95 (0.19) 4.75 (0.18) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.20 (0.20) 4.95 (0.19) 3.15 (0.12) 3.00 (0.11) 0.60 (0.02) 0.40 (0.01) 5.45 REF. (0.21 REF.) 39.95 (1.57) 39.55 (1.56) “G” see note 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 1.35 (0.05) 1.20 (0.04) 18.50 (0.73) 17.85 (0.70) 4.70 (0.19) 4.50 (0.18) 8.80 (0.35) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Note: Outline conform to JEDEC® TO-275, except for dimension “G” only Revision: 10-Jun-2021 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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