VS-80EBU02HF4

VS-80EBU02HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 80 A FRED Pt® FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • AEC-Q101 qualified Anode • PowerTab® package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerTab® BENEFITS • Reduced RFI and EMI • Higher frequency operation PRODUCT SUMMARY Package PowerTab® IF(AV) 80 A • Reduced snubbing • Reduced parts count VR 200 V DESCRIPTION/APPLICATIONS VF at IF 0.77 V trr (typ.) See recovery table These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. TJ max. 175 °C Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS MAX. UNITS 200 V VR Continuous forward current IF(AV) TC = 131 °C 80 Single pulse forward current IFSM TC = 25 °C 800 Maximum repetitive forward current IFRM Square wave, 20 kHz 160 Operating junction and  storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, Vr VF TEST CONDITIONS MIN. TYP. MAX. 200 - - IF = 80 A - 0.94 1.10 IF = 80 A, TJ = 175 °C - 0.77 0.88 VR = VR rated - - 50 μA IR = 50 μA UNITS V Reverse leakage current IR TJ = 150 °C, VR = VR rated - - 2 mA Junction capacitance CT VR = 200 V - 89 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Revision: 16-Jun-15 Document Number: 93996 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU02HF4 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr MIN. TYP. MAX. TJ = 25 °C TEST CONDITIONS - 40 - TJ = 125 °C - 75 - - 4.0 - - 8.8 - TJ = 25 °C - 75 - TJ = 125 °C - 310 - MIN. TYP. MAX. - - 0.5 - 0.2 - - - 5.02 g - 0.18 - oz. 1.2 (10) - 2.4 (20) N·m (lbf · in) IF = 80 A VR = 160 V dIF/dt = 200 A/μs TJ = 25 °C TJ = 125 °C UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, junction to heatsink RthCS TEST CONDITIONS °C/W Mounting surface, flat, smooth and greased Weight Mounting torque Marking device UNITS Case style PowerTab® 80EBU02H Revision: 16-Jun-15 Document Number: 93996 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU02HF4 Vishay Semiconductors 1000 1000 100 TJ = 175°C TJ = 125°C TJ = 25°C 10 1 TJ =175 °C 100 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com TJ =125 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 50 100 150 200 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 10 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 D = 0.5 D = 0.2 0.1 D = 0.1 D = 0.05 Single Pulse (Thermal Resistance) D = 0.02 D = 0.01 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 16-Jun-15 Document Number: 93996 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU02HF4 Vishay Semiconductors 180 100 160 80 140 DC Qrr (nC) Allowable Case Temperature (°C) www.vishay.com 120 100 40 40 60 80 100 VR 160 V TJ = 125 °C .... TJ = 25 °C ___ 0 100 80 20 60 20 Square wave (D = 0.5) 80 % rated VR applied 0 IF = 160 A IF = 80 A IF = 40 A 120 1000 dIF/dt (A/μs) IF(AV) - Average Forward Current (A) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 1200 120 Vr = 160 V TJ = 125 °C TJ = 25 °C 1000 90 800 Qrr (nC) Average Power Loss (W) RMS Limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 60 30 30 60 90 600 400 200 0 100 0 0 IF = 160 A IF = 80 A IF = 40 A 120 1000 dIF/dt (A/μs) IF(AV) - Average Forward Current (A) Fig. 8 - Typical Stored Charge vs. dIF/dt Fig. 6 - Forward Power Loss Characteristics (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 16-Jun-15 Document Number: 93996 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU02HF4 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 80 E B U 02 H F4 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (80 = 80 A) 3 - Single diode 4 - PowerTab® 5 - Ultrafast recovery 6 - Voltage rating (02 = 200 V) 7 - H = AEC-Q101 qualified 8 - Environmental digit: F4 = RoHS-compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-80EBU02HF4 25 375 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95467 Application note www.vishay.com/doc?95179 Revision: 16-Jun-15 Document Number: 93996 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® 15.90 (0.62) 15.60 (0.61) 11.90 (0.47) 12.40 (0.49) Lead 1 Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) Lead 2 4.95 (0.19) 4.75 (0.18) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.20 (0.20) 4.95 (0.19) 3.15 (0.12) 3.00 (0.11) 0.60 (0.02) 0.40 (0.01) 5.45 REF. (0.21 REF.) 39.95 (1.57) 39.55 (1.56) “G” see note 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 1.35 (0.05) 1.20 (0.04) 18.50 (0.73) 17.85 (0.70) 4.70 (0.19) 4.50 (0.18) 8.80 (0.35) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Note: Outline conform to JEDEC® TO-275, except for dimension “G” only Revision: 10-Jun-2021 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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