VS-150EBU04HF4

VS-150EBU04HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt® FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • AEC-Q101 qualified Anode • PowerTab® package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerTab® BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing PRODUCT SUMMARY • Reduced parts count Package PowerTab® IF(AV) 150 A DESCRIPTION / APPLICATIONS VR 400 V VF at IF 0.9 V trr (typ.) See recovery table These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. TJ max. 175 °C Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS MAX. UNITS 400 V VR Continuous forward current IF(AV) TC = 104 °C 150 Single pulse forward current IFSM TC = 25 °C 1500 Maximum repetitive forward current IFRM Square wave, 20 kHz 300 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS MIN. TYP. MAX. 400 - - IF = 150 A - 1.07 1.3 IF = 150 A, TJ = 175 °C - 0.9 1.1 IF = 150 A, TJ = 125 °C - 0.96 1.17 VR = VR rated - - 50 μA TJ = 150 °C, VR = VR rated - - 4 mA IR = 200 μA UNITS V Reverse leakage current IR Junction capacitance CT VR = 400 V - 100 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Revision: 16-Jun-15 Document Number: 93995 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU04HF4 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr MIN. TYP. MAX. TJ = 25 °C TEST CONDITIONS - 93 - TJ = 125 °C - 172 - - 11 - - 20 - TJ = 25 °C - 490 - TJ = 125 °C - 1740 - MIN. TYP. MAX. - - 0.35 - 0.2 - - - 5.02 g - 0.18 - oz. 1.2 (10) - 2.4 (20) N·m (lbf · in) IF = 150 A VR = 200 V dIF/dt = 200 A/μs TJ = 25 °C TJ = 125 °C UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, junction to heatsink RthCS TEST CONDITIONS K/W Mounting surface, flat, smooth and greased Weight Mounting torque Marking device UNITS Case style PowerTab® 150EBU04H Revision: 16-Jun-15 Document Number: 93995 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU04HF4 Vishay Semiconductors 1000 1000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ =175 °C TJ =125 °C TJ = 25 °C 10 1 0.2 100 TJ =175 °C 10 TJ =125 °C 1 TJ = 25 °C 0.1 0.01 0.001 0.4 0.6 0.8 1 1.2 1.4 1.6 0 1.8 100 200 300 400 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 10 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 D = 0.50 0.1 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 Single Pulse (Thermal Resistance) t2 Notes: 1. Duty factor D = t1/ t2 2. Peak TJ = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 16-Jun-15 Document Number: 93995 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU04HF4 Vishay Semiconductors 180 250 Vr = 200 V TJ = 125 °C TJ = 25 °C 160 DC 120 100 Square wave (D = 0.50) Rated Vr applied 80 150 100 60 see note (1) 40 0 50 100 150 200 50 100 250 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 300 5000 Vr = 200 V TJ = 125 °C TJ = 25 °C 4500 250 4000 200 3500 RMS Limit 150 Qrr (nC) Average Power Loss (W) IF = 150 A IF = 75 A 200 140 trr (ns) Allowable Case Temperature (°C) www.vishay.com D = 0.01 D = 0.02 D = 0.05 D = 0.10 D DC = 0.20 D = 0.50 DC 100 50 0 0 50 100 150 200 IF = 150 A IF = 75 A 3000 2500 2000 1500 1000 500 250 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 0 100 1000 dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) Revision: 16-Jun-15 Document Number: 93995 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU04HF4 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (4) Qrr - area under curve defined by trr and IRRM (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 150 E B U 04 H F4 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (150 = 150 A) 3 - Single diode 4 - PowerTab® 5 - Ultrafast recovery 6 - Voltage rating (04 = 400 V) 7 - H = AEC-Q101 qualified 8 - Environmental digit: F4 = RoHS-compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-150EBU04HF4 25 375 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95467 Application note www.vishay.com/doc?95179 SPICE model www.vishay.com/doc?95623 Revision: 16-Jun-15 Document Number: 93995 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® 15.90 (0.62) 15.60 (0.61) 11.90 (0.47) 12.40 (0.49) Lead 1 Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) Lead 2 4.95 (0.19) 4.75 (0.18) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.20 (0.20) 4.95 (0.19) 3.15 (0.12) 3.00 (0.11) 0.60 (0.02) 0.40 (0.01) 5.45 REF. (0.21 REF.) 39.95 (1.57) 39.55 (1.56) “G” see note 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 1.35 (0.05) 1.20 (0.04) 18.50 (0.73) 17.85 (0.70) 4.70 (0.19) 4.50 (0.18) 8.80 (0.35) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Note: Outline conform to JEDEC® TO-275, except for dimension “G” only Revision: 10-Jun-2021 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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