150EBU02_11

VS-150EBU02 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt® FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode Anode • Designed and JEDEC-JESD47 qualified according to • Compliant to RoHS Directive 2002/95/EC • PowerTab® package PowerTab® BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation PowerTab® 150 A 200 V 1.13 V See recovery table 175 °C Single die • Reduced parts count DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Maximum repetitive forward current Operating junction and storage temperatures SYMBOL VR IF(AV) IFSM IFRM TJ, TStg TC = 116 °C TC = 25 °C Square wave, 20 kHz TEST CONDITIONS MAX. 200 150 1600 380 - 55 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 μA IF = 150 A IF = 150 A, TJ = 175 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 200 TYP. 0.99 0.79 180 3.5 MAX. 1.13 0.90 50 2 μA mA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Revision: 15-Jun-11 Document Number: 93002 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 150 A VR = 160 V dIF/dt = 200 A/μs MIN. TYP. 34 58 4.5 9.0 87 300 MAX. 45 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction to case Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style PowerTab® SYMBOL RthJC RthCS Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. 1.2 (10) TYP. 0.2 0.18 MAX. 0.35 K/W 5.02 2.4 (20) g oz. N·m (lbf · in) UNITS 150EBU02 Revision: 15-Jun-11 Document Number: 93002 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02 www.vishay.com Vishay Semiconductors 1000 1000 Reverse Current - I R (µA) 100 10 1 0.1 0.01 T J = 175˚C 125˚C 25˚C Instantaneous Forward Current - I F (A) 100 0.001 T = 175˚C J J J 0 50 100 150 200 Reverse Voltage - VR (V) T = 125˚C T = 25˚C Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10000 10 Junction Capacitance - C T (pF) T J = 25˚C 1000 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Forward Voltage Drop - VFM (V) 100 1 10 100 1000 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 Thermal Impedance Z thJC (°C/W) 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) Notes: PDM t1 t2 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 15-Jun-11 Document Number: 93002 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02 www.vishay.com 70 Vishay Semiconductors IF = 150A IF = 75A 180 Allowable Case Temperature (°C) 60 160 140 120 100 Square wave (D = 0.50) 80% Rated Vr applied 50 DC trr ( ns ) 40 30 80 see note (1) 60 0 50 100 150 200 250 Average Forward Current - IF(AV) (A) 20 Vr = 160V Tj = 125˚C Tj = 25˚C 10 100 di F /dt (A/µs ) 1000 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 900 250 Average Power Loss ( Watts ) 800 RMS Limit 200 150 100 50 0 0 50 100 700 600 Qrr ( nC ) Vr = 160V Tj = 125˚C Tj = 25˚C IF = 150A IF = 75A D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 500 400 300 200 150 200 250 100 0 100 di F /dt (A/µs ) Average Forward Current - IF(AV) (A) 1000 Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt (1) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 15-Jun-11 Document Number: 93002 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 15-Jun-11 Document Number: 93002 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-150EBU02 www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 4 5 6 - 150 2 E 3 B 4 U 5 02 6 Vishay Semiconductors product Current rating (150 = 150 A) Single diode PowerTab® (ultrafast/hyperfast only) Ultrafast recovery Voltage rating (02 = 200 V) LINKS TO RELATED DOCUMENTS Dimensions Part marking information Application note www.vishay.com/doc?95240 www.vishay.com/doc?95370 www.vishay.com/doc?95179 Revision: 15-Jun-11 Document Number: 93002 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® DIMENSIONS in millimeters (inches) 15.90 (0.62) 15.60 (0.61) 15.60 (0.61) 14.80 (0.58) 1.35 (0.05) 1.20 (0.04) 8.45 (0.33) 8.20 (0.32) 4.20 (0.16) 4.00 (0.15) Lead 1 12.40 (0.48) 12.10 (0.47) 18.25 (0.71) 18.00 (0.70) 27.65 (1.08) 27.25 (1.07) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) Lead 2 Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.45 REF. (0.21 REF.) 5.20 (0.20) 4.95 (0.19) 3.09 (0.12) 3.00 (0.11) 0.60 (0.02) 0.40 (0.01) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) 4.95 (0.19) 4.75 (0.18) Lead assignments Lead 1 = Cathode Lead 2 = Anode Revision: 03-Aug-11 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 39.8 (1.56) 39.6 (1.55) Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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