SUP/SUB75N05-07
New Product
Vishay Siliconix
N-Channel 55-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
55
rDS(on) (W)
0.007 @ VGS = 10 V 0.009 @ VGS = 4.5 V
ID (A)
"75 a
TO-220AB
D
TO-263
G DRAIN connected to TAB G GDS Top View SUP75N05-07 DS S N-Channel MOSFET
Top View SUB75N05-07
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Drain Current C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipation Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
55 "20 "75a "60 "240 "60 180 158c 3.7 –55 to 175
Unit
V
A
mJ W _C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70871 S-60952—Rev. A, 19-Apr-99 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC
Symbol
Limit
40 62.5 0.95
Unit
_C/W
2-1
SUP/SUB75N05-07
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 44 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 44 V, VGS = 0 V, TJ = 125_C VDS = 44 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A D i -Source On-State Resistance S i Drain S Drain-Source On-State Resistancea rDS(on) DS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 40 120 0.0056 0.0072 0.007 0.009 0.011 0.015 S W 55 V 1 3 "100 1 50 250 A mA nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.47 W 30 V, 47 ID ^ 75 A, VGEN = 10 V RG = 2.5 W 75 A 10 V, 5 VDS = 30 V, VGS = 10 V ID = 75 A 30 V 10 V, 75 VGS = 0 V, VDS = 25 V, f = 1 MHz 6830 720 350 135 25 34 13 11 90 25 20 20 ns 160 40 170 nC C pF F
Source-drain Diode Ratings and Characteristics (Tc = 25_C)b
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 75 A di/dt = 100 A/ms 75 A, IF = 75 A, VGS = 0 V 1.0 45 2 0.09 75 A 240 1.3 80 5 0.4 V ns A mC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70871 S-60952—Rev. A, 19-Apr-99
SUP/SUB75N05-07
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250 VGS = 5 thru 10 V 200 I D – Drain Current (A) I D – Drain Current (A) 160 200
Vishay Siliconix
Transfer Characteristics
150
120
100
4V
80 TC = 125_C 40 25_C –55_C 0
50 2, 3 V 0 0 2 4 6 8 10
0
1
2
3
4
5
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
Transconductance
210 180 g fs – Transconductance (S) 150 125_C 120 90 60 30 0 0 20 40 60 80 100 0 0 TC = –55_C r DS(on) – On-Resistance ( W ) 25_C 0.008 0.010
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V 0.006
0.004
0.002
20
40
60
80
100
VGS – Gate-to-Source Voltage (V)
ID – Drain Current (A)
Capacitance
10000 10
Gate Charge
8000 C – Capacitance (pF)
Ciss
V GS – Gate-to-Source Voltage (V)
8
VGS = 30 V ID = 75 A
6000
6
4000
4
2000
Crss Coss
2
0 0 10 20 30 40 50
0 0 20 40 60 80 100 120 140
VDS – Drain-to-Source Voltage (V) Document Number: 70871 S-60952—Rev. A, 19-Apr-99
Qg – Total Gate Charge (nC) www.vishay.com S FaxBack 408-970-5600
2-3
SUP/SUB75N05-07
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5 VGS = 10 V ID = 75 A r DS(on) – On-Resistance (W ) (Normalized) 2.0 I S – Source Current (A) 100
Source-Drain Diode Forward Voltage
TJ = 150_C
1.5
TJ = 25_C 10
1.0
0.5
0 –50
1 –25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ – Junction Temperature (_C)
VSD – Source-to-Drain Voltage (V)
Avalanche Current vs. Time
300 80
Drain-Source Breakdown vs. Junction Temperature
100 70 IAV (A) @ TJ = 25_C I Dav (a) V (BR)DSS (V)
60
10 IAV (A) @ TJ = 150_C 50
1 0.0001 0.001 0.01 tin (Sec) 0.1 1
40 –50
–25
0
25
50
75
100
125
150
175
TJ – Junction Temperature (_C)
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70871 S-60952—Rev. A, 19-Apr-99
SUP/SUB75N05-07
New Product
THERMAL RATINGS
Vishay Siliconix
Maximum Drain Current vs. Case Temperature
80 300
Safe Operating Area
10 ms Limited by rDS(on) I D – Drain Current (A)
60 I D – Drain Current (A)
100
100 ms
40
1 ms 10 TC = 25_C Single Pulse 10 ms 100 ms dc
20
0 0 25 50 75 100 125 150 175
1 0.1 1 10 100
TC – Case Temperature (_C)
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2
0.1 0.1 0.05 0.02
Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec)
Document Number: 70871 S-60952—Rev. A, 19-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-5
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