找到“mos fet”相关的规格书共12,041个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| 2SK2825_07 | TOSHIBA[ToshibaSemiconductor] | 2SK2825_07 - Silicon N Channel MOS Type For Portable Equipment - Toshiba Semiconductor | 获取价格 | ||
| 2SK2543_06 | TOSHIBA[ToshibaSemiconductor] | 2SK2543_06 - Silicon N Channel MOS Type Switching Regulator Applications - Toshiba Semiconductor | 获取价格 | ||
| 2SK2484 | KEXIN[GuangdongKexinIndustrialCo.,Ltd] | 2SK2484 - MOS Field Effect Transistors - Guangdong Kexin Industrial Co.,Ltd | 获取价格 | ||
| 2SK2467 | TOSHIBA[ToshibaSemiconductor] | 2SK2467 - Silicon N Channel MOS Type High-Power Amplifier Application - Toshiba Semiconductor | 获取价格 | ||
| 2SK2415 | KEXIN[GuangdongKexinIndustrialCo.,Ltd] | 2SK2415 - MOS Field Effect Transistor - Guangdong Kexin Industrial Co.,Ltd | 获取价格 | ||
| VB30120SG-E3-8W | VISHAY[VishaySiliconix] | VB30120SG-E3-8W - High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay Siliconix | 获取价格 | ||
| VB30100S-E3-4W | VISHAY[VishaySiliconix] | VB30100S-E3-4W - High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay Siliconix | 获取价格 | ||
| VB20120SG-E3-8W | VISHAY[VishaySiliconix] | VB20120SG-E3-8W - High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay Siliconix | 获取价格 | ||
| VB20100SG-E3-4W | VISHAY[VishaySiliconix] | VB20100SG-E3-4W - High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay Siliconix | 获取价格 | ||
| VB20100C-E3-8W | VISHAY[VishaySiliconix] | VB20100C-E3-8W - Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay Siliconix | 获取价格 | ||
| VB10150C-E3-4W | VISHAY[VishaySiliconix] | VB10150C-E3-4W - High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay Siliconix | 获取价格 | ||
| V8P10-M3-86A | VISHAY[VishaySiliconix] | V8P10-M3-86A - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier - Vishay Siliconix | 获取价格 | ||
| V8P10-E386A | VISHAY[VishaySiliconix] | V8P10-E386A - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier - Vishay Siliconix | 获取价格 | ||
| V8P10 | VISHAY[VishaySiliconix] | V8P10 - High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier - Vishay Siliconix | 获取价格 | ||
| 2SK2035 | TOSHIBA[ToshibaSemiconductor] | 2SK2035 - N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCHING APPLICATIONS) - Toshiba Semiconductor | 获取价格 | ||
| 2SK1960 | KEXIN[GuangdongKexinIndustrialCo.,Ltd] | 2SK1960 - MOS Field Effect Transistor - Guangdong Kexin Industrial Co.,Ltd | 获取价格 | ||
| 2SK1959 | KEXIN[GuangdongKexinIndustrialCo.,Ltd] | 2SK1959 - MOS Field Effect Transistor - Guangdong Kexin Industrial Co.,Ltd | 获取价格 | ||
| 2SK1954 | KEXIN[GuangdongKexinIndustrialCo.,Ltd] | 2SK1954 - MOS Field Effect Power Transistor - Guangdong Kexin Industrial Co.,Ltd | 获取价格 | ||
| 2SK1827 | TOSHIBA[ToshibaSemiconductor] | 2SK1827 - N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) - Toshiba Semiconductor | 获取价格 | ||
| 2SK1825 | TOSHIBA[ToshibaSemiconductor] | 2SK1825 - N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) - Toshiba Semiconductor | 获取价格 |
