WSF45P10

WSF45P10 P-Ch MOSFET General Description Product Summery The WSF45P10 is the highest performance trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS -100V RDSON ID 44mΩ -40A Applications The WSF45P10 meet the RoHS and Green Product requirement with full function reliability approved. z Inverters TO-252 Pin Configuration Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -100 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 175 °C -55 to 175 °C -40 A -120** A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current TC=25°C V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C -40 TC=100°C -26 TC=25°C 136 TC=100°C 68 RθJC Thermal Resistance-Junction to Case 1.1 RθJA Thermal Resistance-Junction to Ambient 62.5 A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH 308*** mJ Note： * Repetitive rating ; pulse width limiited by junction temperatur ** Drain current is limited by junction temperature *** VD=-80V www.winsok.tw Page 1 Dec.2014 WSF45P10 P-Ch MOSFET Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Min. Typ. Max. Unit VGS=0V, IDS=-250µA -100 - - V VDS=-100 V, VGS=0V - - -1 - - -10 -1 -2 -3 V Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) TJ=85°C µA Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA RDS(ON)* Drain-Source On-state Resistance VGS=-10V, I DS=-20 A - 44 55 mΩ RDS(ON)* Drain-Source On-state Resistance VGS=-4.5V, I DS=-20A - 47 58.5 mΩ ISD=-20A, VGS=0V - -0.8 -1.2 V - 70 - ns - 90 - nC - 2 - Ω - 5720 - - 790 - - 450 - - 30 - - 79 - - 82 - - 69 - - 125 - - 21 - - 45 - IGSS Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=-20A, dlSD/dt=-100A/µ s Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-20V, Frequency=1.0MHz VDD=-50V, RG = 6 Ω, IDS =-20A, VGS=-10V, Turn-off Fall Time pF ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-80V,VGS=-10V, IDS=-20A nC Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. www.winsok.tw Page 2 Dec.2014 WSF45P10 P-Ch MOSFET Typical Characteristics Output Characteristics Drain-Source On Resistance 60 80 VGS = -4.0,-4.5,-10V -ID - Drain Current (A) 60 RDS(ON) - On - Resistance (mΩ) 70 -3.5V 50 40 -3V 30 20 -2V 10 0 50 VGS =-4.5V 45 VGS =-10V 40 35 0 1 2 3 4 5 0 6 10 20 30 40 -V DS - Drain-Source Voltage (V) -I D - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 120 100 80 60 50 40 30 0 2 4 6 8 10 1.2 1.0 0.8 0.6 0.4 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) -VGS - Gate - Source Voltage (V) www.winsok.tw 1.4 0.2 -50 -25 12 50 IDS =-250µA IDS=-20A Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) 55 Page 3 Dec.2014 WSF45P10 P-Ch MOSFET Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward 2.4 VGS =-10V 2.2 100 IDS =-20A 1.8 -IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 o Tj=175 C 10 o Tj=25 C 1 o 0.2 -50 -25 RON@Tj=25 C: 44m Ω 0 25 50 0.1 0.0 75 100 125 150 175 -0.6 -0.8 -1.0 -1.2 -VSD - Source-Drain Voltage (V) Capacitance Gate Charge -1.4 10 Frequency=1MHz 10000 VDS= -80V 9 -VGS - Gate-source Voltage (V) 9000 C - Capacitance (pF) -0.4 Tj - Junction Temperature (°C) 11000 8000 Ciss 7000 6000 5000 4000 3000 2000 1000 0 -0.2 Coss Crss 0 5 10 15 20 25 30 35 -V DS - Drain - Source Voltage (V) www.winsok.tw 7 6 5 4 3 2 1 0 40 IDS= -20A 8 0 20 40 60 80 100 120 140 160 QG - Gate Charge (nC) Page 4 Dec.2014 WSF45P10 P-Ch MOSFET Typical Characteristics Drain Current Power Dissipation 140 -I D - Drain Current (A) 45 Ptot - Power (W) 120 100 80 60 40 40 35 30 25 20 15 10 20 5 o 0 TC=25 C 0 20 40 o 60 0 80 100 120 140 160 180 200 TC=25 C,VG=-10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area ds ( on )L im it 100 100us R -ID - Drain Current (A) 1000 10 1ms 10ms DC 1 o TC=25 C 0.1 0.1 1 10 100 1000 -VDS - Drain - Source Voltage (V) Thermal Transient Impedance 1 Normalized Effective Transient Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RθJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration sec www.winsok.tw Page 5 Dec.2014 WSF45P10 P-Ch MOSFET Package Information TO-252 E A E1 c2 L4 H D D1 L3 b3 c b e SEE VIEW A 0 GAUGE PLANE SEATING PLANE 0.25 A1 L VIEW A TO-252 S Y M B O L A MIN. MAX. MIN. MAX. 2.18 2.39 0.086 0.094 A1 - 0.13 - 0.005 b 0.50 0.89 0.020 0.035 0.215 RECOMMENDED LAND PATTERN MILLIMETERS INCHES b3 4.95 5.46 0.195 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 D 5.33 6.22 0.210 0.245 D1 4.57 6.00 0.180 E 6.35 6.73 0.250 0.236 0.265 E1 3.81 6.00 0.150 0.236 e 2.29 BSC 6.25 MIN. 6.8 MIN. 6.6 3 MIN. 0.090 BSC H 9.40 10.41 0.370 0.410 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 L4 - 1.02 - 0.040 0 0° 0° 8° 8° 2.286 1.5 MIN. 4.572 UNIT: mm Note : Follow JEDEC TO-252 . www.winsok.tw Page 6 Dec.2014 WSF45P10 P-Ch MOSFET Classification Profile www.winsok.tw Page 7 Dec.2014 WSF45P10 P-Ch MOSFET Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness