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ES8GC

ES8GC

  • 厂商:

    JINGDAO(晶导微电子)

  • 封装:

    SMC(DO-214AB)

  • 描述:

    独立式 总电容50pF 反向耐压400V

  • 数据手册
  • 价格&库存
ES8GC 数据手册
山东晶导微电子有限公司 ES8AC THRU ES8JC Jingdao Microelectronics Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current –8 A PINNING PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 2 1 MECHANICAL DATA • Case : SMC • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight : 0.22g / 0.0077oz Top View Marking Code: ES8A~ES8J Simplified outline SMC and symbol Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols Parameter ES8AC ES8BC ES8CC ES8DC ES8EC ES8GC ES8JC Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 200 300 400 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at T c = 100 °C I F(AV) 8 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 125 A Maximum Forward Voltage at 8 A VF Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time (1) Typical Thermal Resistance (2) Operating and Storage Temperature Range 1.3 0.98 1.7 V IR 10 350 μA Cj 50 pF t rr 35 ns RθJA RθJL 75 20 °C/W T j , T stg -55 ~ +150 °C (1)Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . (2)P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2017.04 SMC-E-YJH-ES8AC~ES8JC-8A600V Page 1 of 3 山东晶导微电子有限公司 ES8AC THRU ES8JC Jingdao Microelectronics Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive t rr 10 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 11.2 300 9.6 100 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 8.0 6.4 4.8 3.2 1.6 Single phase half-wave 60 Hz resistive or inductive load T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 0 175 20 40 Case Temperature (°C) Junction Capacitance ( pF) Instaneous Forward Current (A) T J =25°C 10 ES8AC~ES8DC ES8EC/ES8GC ES8JC 0.1 T J =25°C 100 0.01 0.5 1.0 1.5 100 Fig.5 Typical Junction Capacitance 100 0 80 % of PIV.VOLTS Fig.4 Typical Forward Characteristics 1.0 60 2.0 2.5 Instaneous Forward Voltage (V) 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 126 105 84 63 42 21 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles 2017.04 www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 ES8AC THRU ES8JC Jingdao Microelectronics PACKAGE OUTLINE SMC Plastic surface mounted package; 2 leads E A A1 A C b D L E1 VM A SMC mechanical data A E D E1 A1 C L b max 2.62 7.0 6.2 8.0 0.21 0.31 1.6 3.25 min 2.00 6.5 5.6 7.6 0.05 0.15 0.9 2.75 max 103 276 244 315 8.3 12 63 128 min 79 256 220 299 2.0 5.9 35 108 UNIT mm mil Marking The recommended mounting pad size 3.8 (150) 4.1 (160) 4.3 (170) 4.1 (160) Type number Marking code ES8AC ES8A ES8BC ES8B ES8CC ES8C ES8DC ES8D ES8EC ES8E ES8GC ES8G ES8JC ES8J mm Unit : (mil) 2017.04 JD704221B20 Page 3 of 3
ES8GC 价格&库存

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ES8GC
  •  国内价格
  • 1+0.36149
  • 100+0.33739
  • 300+0.31329
  • 500+0.28919
  • 2000+0.27714
  • 5000+0.26991

库存:0