ASDM100R090NQ
100V N-Channel MOSFET
Features
Product Summary
◇ High Speed Power Switching, Logic Level
◇ Enhanced Body diode dv/dt capability
◇ Enhanced Avalanche Ruggedness
◇ 100% UIS Tested, 100% Rg Tested
◇ Lead Free, Halogen Free
V DS
100
R DS(on),Typ@ VGS=10 V
7.3
V
mΩ
55
ID
A
Application
◇ Synchronous Rectification in SMPS
◇ Hard Switching and High Speed Circuit
◇ DC/DC in Telecoms and Inductrial
D
G
S
DFN5×6-8
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Continuous Drain Current (Silicon Limited)
Conditions
Symbol
ID
Value
TC=25℃
55
TC=100℃
38
100
Unit
A
Drain to Source Voltage
VDS
-
Gate to Source Voltage
VGS
-
Pulsed Drain Current
IDM
-
Avalanche Energy, Single Pulse
EAS
L=0.1mH, TC=25℃
80
mJ
Power Dissipation
PD
TC=25℃
3.1
W
-55 to150
℃
Symbol
Max
Unit
RθJL
23
℃/W
Operating and Storage Temperature
TJ, Tstg
V
+20/-12
80
-
V
A
Absolute Maximum Ratings
Parameter
Thermal Resistance Junction-Lead
Thermal Resistance Junction-Ambient (t≤10s)
Thermal Resistance Junction-Ambient (steady state)
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RθJA
40
℃/W
75
℃/W
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ASDM100R090NQ
100V N-Channel MOSFET
Electrical Characteristics at Tj=25℃ (unless otherwise specified)
Static Characteristics
Parameter
Symbol
Value
Conditions
min
typ
max
100
1
-
-
1.8
2.5
VGS=0V, VDS=95V, Tj=25℃
-
-
1
VGS=0V, VDS=95V, Tj=125℃
-
-
100
VGS=±20V, VDS=0V
-
-
±100
VGS=10V, ID=14A
-
7.3
9
VGS=4.5V, ID=10A
-
11
Drain to Source Breakdown Voltage V(BR)DSS
VGS=0V, ID=250µA
Gate Threshold Voltage
VGS(th)
VGS=VDS, ID=250µA
Zero Gate Voltage Drain Current
IDSS
Gate to Source Leakage Current
IGSS
Drain to Source on Resistance
RDS(on)
Transconductance
gfs
VDS=5V, ID=14A
-
70
12
-
Gate Resistance
RG
VGS=0V, VDS Open, f=1MHz
-
1.5
-
-
3350
-
-
270
-
Unit
V
µA
nA
mΩ
S
Ω
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
15
-
Total Gate Charge
Qg(10V)
-
49
-
Total Gate Charge
Qg(4.5V)
-
21
-
Gate to Source Charge
Qgs
-
8
-
Gate to Drain (Miller) Charge
Qgd
-
7
-
Turn on Delay Time
td(on)
-
10
-
Rise time
tr
VDD=50V, ID=14A, VGS=10V,
-
5
-
Turn off Delay Time
td(off)
RG=10Ω,
-
32
-
Fall Time
tf
-
6
-
-
0.9
1.2
V
-
47
-
ns
-
226
-
nC
VGS=0V, VDS=50V, f=1MHz
VDD=50V, ID=14A, VGS=10V
pF
nC
ns
Reverse Diode Characteristics
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
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VGS=0V, IF=14A
VR=50V, IF=14A, dIF/dt=500A/µs
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ASDM100R090NQ
100V N-Channel MOSFET
Fig 1. Typical Output Characteristics
Figure 2. On-Resistance vs. Gate-Source Voltage
20
120
6V
8V
110
ID=14A
5V
100
10V
4V
15
90
80
RDS(ON) (mΩ)
125°C
ID (A)
70
10
60
50
3.5V
40
25°C
5
30
20
10
Vgs=3V
0
0
0
1
2
3
2
4
4
6
8
10
VGS (V)
VDS (V)
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
Figure 4. Normalized On-Resistance vs. Junction Temperature
15
2.2
ID=14A
Normalized On-Resistance
2
10
RDS(ON) (mΩ)
VGS=4.5V
VGS=10V
5
VGS=10V
1.8
1.6
VGS=4.5V
1.4
1.2
1
0
0.8
0
5
10
15
20
0
25
50
ID (A)
75
100
125
150
175
Temperature (°C)
Figure 5. Typical Transfer Characteristics
Figure 6. Typical Source-Drain Diode Forward Voltage
30
1.E+01
28
VDS=5V
26
1.E+00
24
22
20
125℃
18
1.E-01
25℃
125°C
25°C
IS (A)
ID(A)
16
14
12
10
1.E-02
1.E-03
8
6
1.E-04
4
2
0
1.E-05
1
1.5
2
2.5
VGS(V)
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3
3.5
4
0.1
0.3
0.5
0.7
0.9
VSD (V)
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ASDM100R090NQ
100V N-Channel MOSFET
Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage
Figure 8. Typical Capacitance vs. Drain-to-Source Voltage
10000
10
VDS=50V
ID=14A
Ciss
8
Capacitance (pF)
1000
VGS (V)
6
4
Coss
100
Crss
10
2
0
1
0
5
10
15
20
25
30
35
40
45
50
0
20
40
60
80
100
VDS (V)
Qg (nC)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximun Drain Current vs. Case Temperature
20
18
100.0
16
14
ID (Amps)
RDS(ON)
100µs
1.0
1ms
0.1
10ms
DC
TJ(Max)=150°C
TC=25°C
Current rating ID(A)
10µs
10.0
10s
0.0
0.01
12
10
8
6
4
2
0
0.1
1
10
100
0
25
VDS (V)
50
75
100
125
150
TAmbient(℃)
Figure 11. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient
0.03
0.05
0.1
0.3
10
Duty=Ton/T
Peak TJ=TC+PDM.ZθJA.RθJA
RθJA=75℃/W
ZθJA Normalized Transient
Thermal Resistance
1
Duty=0.5
0.3
0.1
0.1
0.05
0.03
0.01
0.01
0.001
0.00001
single pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
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ASDM100R090NQ
100V N-Channel MOSFET
Inductive switching Test
Gate Charge Test
Uclamped Inductive Switching (UIS) Test
Diode Recovery Test
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0755-86970486
ASDM100R090NQ
100V N-Channel MOSFET
Ordering and Marking Information
Ordering Device No.
ASDM100R090NQ-R
PACKAGE
Package
Packing
Quantity
100R090N
DFN5*6-8
Tape&Reel
4000/Reel
MARKING
DFN5*6-8
NOV 2020 Version2.0
Marking
100R090N
6/8
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0755-86970486
ASDM100R090NQ
100V N-Channel MOSFET
DFN5*6-8 PACKAGE IN FORMATION
Symbol
A
A1
A2
b
C
D
D1
e
E
E1
E2
L
L1
L2
L3
H
Ө
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Dimensions in Millimeters
Min
Max
0.85
1.00
0.01
0.05
0.69
0.75
0.40
0.45
0.20
0.30
4.80
4.95
3.91
4.06
Dimensions in Inches
Min
Max
0.033
0.039
0.000
0.002
0.027
0.030
0.016
0.018
0.008
0.012
0.189
0.195
0.154
0.160
1.27 TYP
5.65
3.46
0.80
0.15
0.08
0.58
0.45
6.15
8°
5.80
3.50
0.95
0.3
0.15
0.73
0.60
6.28
12°
0.222
0.136
0.031
0.006
0.003
0.023
0.018
0.242
8°
0.05 TYP
0.228
0.138
0.037
0.012
0.006
0.029
0.024
0.247
12°
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0755-86970486
ASDM100R090NQ
100V N-Channel MOSFET
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