NDT2955

NDT2955 P-CHANNEL MOSFET FOR SWITCHING 。 10 6.50±0.2 3.00±0.1 Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter D 1 3 0.250 1.6 ± 0.1 JS G 2 0.75 (min) 7.0±0.3 3.50±0.2 4 2.30 (typ) 0.84 (max) MI 0.02 ~ 0.1 1.Gate 2.Drain 3.Source 4.Drain 4.60 (typ) S CR Absolute Maximum Ratings (Ta = 25°C) Drain peak current Body to drain diode reverse drain current Value –60 Unit V VGSS ID ±20 –3 V A ID (pulse) IDR –4 –1 A A 1 150 W °C –55 to +150 °C Se Gate to source voltage Drain current Symbol VDSS mi O Item Drain to source voltage Gauge Plane 0.66 (min) 1.80 (max) • • • • • Unit:mm SOT-223 Features Channel dissipation Channel temperature Pch Tch Tstg Electrical Characteristics co Storage temperature Symbol V (BR) DSS Min –60 Typ — Gate to source breakdown voltage Gate to source leak current V (BR) GSS IGSS ±20 — — — Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS (off) — –1.0 — — Static drain to source on state resistance RDS (on) RDS (on) — — 0.15 0.19 Forward transfer admittance Input capacitance |yfs| Ciss 0.6 — 1.0 160 Output capacitance Reverse transfer capacitance Coss Crss — — Turn-on delay time Rise time td (on) tr Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time (Ta = 25°C) Max — Unit V Test Conditions ID = –10 mA, VGS = 0 — ±5 V µA IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 –10 –2.25 µA V VDS = –50 V, VGS = 0 ID = –1 mA, VDS = –10 V 0.17 0.2 Ω Ω ID = –0.5 A, VGS = –10 V Note 3 ID = –0.5 A, VGS = –4 V — — S pF 80 28 — — pF pF ID = –0.5 A, VDS = –10 V VDS = –10 V VGS = 0 f = 1 MHz — — 7 8 — — ns ns td (off) tf — — 30 25 — — ns ns VDF trr — — –1.1 90 — — V ns r to uc nd Item Drain to source breakdown voltage www.jsmsemi.com Note 3 Note 3 ID = –0.5 A VGS = –10 V RL = 60 Ω IF = –1 A, VGS = 0 IF = –1 A, VGS = 0 diF/dt = 50 A/µs 第１／４页 NDT2955 P-CHANNEL MOSFET FOR SWITCHING Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area –5 –3 µs = 10 ID (A) 10 0.5 0 pe O 1.0 C D Drain Current –0.3 0 –0.1 Operation in this area is limited by RDS (on) –0.03 –0.01 50 100 150 MI Ambient Temperature Ta = 25°C –0.005 –0.1 –0.3 –1 200 Ta (°C) CR –0.8 –2.5 V VGS = –2 V –2 –4 –6 Drain to Source Voltage –8 –10 VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.0 Pulse Test –0.8 ID = –1 A –0.6 –0.5 A –0.4 –0.2 –0.2 A 0 0 –2 –4 –6 Gate to Source Voltage –8 –10 Tc = 75°C –0.4 25°C –25°C –0.2 0 r to uc nd 0 –0.8 co –0.4 0 VDS (V) –0.6 mi Drain Current –1.2 ID (A) –3 V Drain Current –1.6 –100 VDS = –10 V Pulse Test 0 –1 –2 –3 –4 Gate to Source Voltage –5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (Ω) –6 V –4 V –30 –1.0 Pulse Test Se ID (A) –10 V –10 Typical Transfer Characteristics O –2.0 –3 Drain to Source Voltage Typical Output Characteristics Drain to Source Saturation Voltage VDS (on) (V) t) µs ho s 0 10 ms s (1 n m 1 tio ra –1 PW 1.5 JS Channel Dissipation Pch (W) (on the alumina ceramic board) 2.0 5 Pulse Test 2 VGS = –4 V 1 0.5 –10 V 0.2 0.1 0.05 –0.05 –0.1 –0.2 VGS (V) www.jsmsemi.com –0.5 Drain Current –1 –2 –5 ID (A) 第２／４页 NDT2955 P-CHANNEL MOSFET FOR SWITCHING Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current 2.0 Pulse Test 1.6 ID = –1 A –0.5 A, –0.2 A 1.2 VGS = –4 V –1 A 0.8 –0.5 A, –0.2 A –10 V 0.4 JS Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 0 –40 0 40 80 120 MI Case Temperature 160 5 2 Tc = –25°C 1 25°C 0.5 75°C 0.2 0.1 VDS = –10 V Pulse Test 0.05 –0.01 –0.02 Tc (°C) CR 20 IDR (A) –40 –8 VDS –60 VGS –12 VDD = –10 V –25 V –40 V –16 –80 ID = –1 A –100 0 4 8 Gate Charge 12 16 –20 20 VGS (V) –4 Gate to Source Voltage VDS (V) –20 Crss 10 VGS = 0 f = 1 MHz 0 –10 –20 –30 –40 –50 Switching Characteristics 0 VDD = –10 V –25 V –40 V 30 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 0 Coss 1 –2 500 Switching Time t (ns) Reverse Drain Current –1 100 r to uc nd –0.5 Ciss 3 di / dt = 50 A / µs VGS = 0, duty ≤ 1 % 10 5 –0.02 –0.05 –0.1 –0.2 Drain to Source Voltage Capacitance C (pF) 50 300 co mi Reverse Recovery Time trr (ns) 1000 Se 100 –1 Typical Capacitance vs. Drain to Source Voltage O 200 –0.5 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 500 –0.05 –0.1 –0.2 VGS = –10 V, VDD = –30 V PW = 2 µs, duty ≤ 1 % 200 100 50 tf td(off) 20 10 5 –0.01 –0.02 Qg (nc) www.jsmsemi.com tr td(on) –0.05 –0.1 –0.2 Drain Current –0.5 –1 ID (A) 第３／４页 NDT2955 P-CHANNEL MOSFET FOR SWITCHING Reverse Drain Current vs. Source to Drain Voltage Pulse Test –0.8 –10 V –0.6 –5 V –0.4 –0.2 VGS = 0, 5 V 0 0 –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage VSD –2.0 (V) O CR MI JS Reverse Drain Current IDR (A) –1.0 Switching Time Test Circuit Waveform D.U.T. RL 50 Ω VDD = –30 V 10% 90% 90% 90% 10% 10% r to uc nd co Vin –10 V Vin mi Se Vout Monitor Vin Monitor Vout td(on) www.jsmsemi.com tr td(off) tf 第４／４页