| 1 | NCEP033N10D | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):160A;功率(Pd):245W;导通电阻(RDS(on)@Vgs,Id):2.7mΩ@10V,... | 下载 | WUXI NCE POWER CO., Ltd. |
| 2 | NV0507EP3I155D30N100 | VCXO 7050 6pads 100MHz,LVPECL, 3.3V,±15ppm, -135dBc/1khz, -40~85℃,Tuning Range ±30... | 下载 | Chengdu Xtaltq Technologies Co.,ltd |
| 3 | NV0507EH3I155E30N100 | VCXO 7050 6pads 100MHz,HCMOS, 3.3V,±15ppm, -140dBc/1khz, -40~85℃,Tuning Range ±30p... | 下载 | Chengdu Xtaltq Technologies Co.,ltd |
| 4 | NV0507ED3I155D30N100 | VCXO 7050 6pads 100MHz,LVDS, 3.3V,±15ppm, -135dBc/1khz, -40~85℃,Tuning Range ±30pp... | 下载 | Chengdu Xtaltq Technologies Co.,ltd |
| 5 | NX3225SA-16MHZ-EXS00A-CS10477 | | 下载 | Nihon Dempa Kogyo |
| 6 | NDT3055 | | 下载 | JSMICRO SEMICONDUCTOR |
| 7 | NX3225SA-26MHZ-STD-CSR-6 | 无源晶振 26MHz ±15ppm 8pF 50Ω SMD3225_4P 表面贴装 -40℃~+85℃ | 下载 | Nihon Dempa Kogyo |
| 8 | NDS331N | MOSFETs N-沟道 SOT-23 | 下载 | Tech Public Electronics Co.,Ltd. |
| 9 | NSM2015-20B5F-Q1SWR | 未分类 | 下载 | Suzhou Novosense Microelectronics Co., Ltd. |
| 10 | NTB25P06T4G-VB | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):35A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):48mΩ@10V,35A;阈值... | 下载 | VBsemi Electronics Co. Ltd |
| 11 | NP3411MR-G | | 下载 | Shanghai Natlinear Electronics Co.,Ltd. |
| 12 | NP6003VR | | 下载 | Shanghai Natlinear Electronics Co.,Ltd. |
| 13 | NP2301BVR-G | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2.4A;功率(Pd):1W;导通电阻(RDS(on)@Vgs,Id):86mΩ@4.5V,2A; | 下载 | Shanghai Natlinear Electronics Co.,Ltd. |
| 14 | NP2300MR-Y-G | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):1.4W;导通电阻(RDS(on)@Vgs,Id):24mΩ@4.5V,5A; | 下载 | Shanghai Natlinear Electronics Co.,Ltd. |
| 15 | NSV1C200LT1G | 晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):2A;功率(Pd):490mW;直流电流增益(hFE@Ic,Vce):120@500m... | 下载 | Murata Manufacturing Co., Ltd. |
| 16 | NTR1P02T1G | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):1A;功率(Pd):400mW;导通电阻(RDS(on)@Vgs,Id):180mΩ@10V,1.... | 下载 | Murata Manufacturing Co., Ltd. |
| 17 | NDS0610 | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):120mA;功率(Pd):360mW;导通电阻(RDS(on)@Vgs,Id):10Ω@10V,5... | 下载 | Murata Manufacturing Co., Ltd. |
| 18 | NTR4503NT1G | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):1.5A;功率(Pd):420mW;导通电阻(RDS(on)@Vgs,Id):110mΩ@2.5A... | 下载 | Murata Manufacturing Co., Ltd. |
| 19 | NTR4170NT1G | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):2.4A;功率(Pd):480mW;导通电阻(RDS(on)@Vgs,Id):55mΩ@10V,3... | 下载 | Murata Manufacturing Co., Ltd. |
| 20 | NTGD3148NT1G-VB | 类型:2个N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):22mΩ@4.5V,6A;阈... | 下载 | VBsemi Electronics Co. Ltd |
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