| 1 | PBHV9115Z,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):150V;集电极电流(Ic):1A;功率(Pd):700mW;集电极截止电流(Icbo):100nA;集电极-发射极... | 下载 | Rubycon Corporation |
| 2 | PS223J3A1503 | 容值:22nF;精度:±5%;额定电压:1kV; | 下载 | KYET |
| 3 | PG150_R2_00001 | DIODE GEN PURP 50V 1.5A DO15 | 下载 | PANJIT SEMI CONDUCTOR |
| 4 | PG201_R2_00001 | DIODE GEN PURP 100V 2A DO15 | 下载 | PANJIT SEMI CONDUCTOR |
| 5 | PG2010R_R2_00001 | DIODE GEN PURP 1KV 2A DO15 | 下载 | PANJIT SEMI CONDUCTOR |
| 6 | PT8201 | | 下载 | ShenZhen Puolop Electronics co.,LTD. |
| 7 | PS9115F | 类型:-;协议类别:-;驱动器/接收器数:-;数据速率:-; | 下载 | HYPWR |
| 8 | PSMN2R0-30PL,127 | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100A;功率(Pd):211W;导通电阻(RDS(on)@Vgs,Id):2.1mΩ@10V,1... | 下载 | Rubycon Corporation |
| 9 | P1010AT | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):69A;功率(Pd):115W;导通电阻(RDS(on)@Vgs,Id):10.5mΩ@10V,... | 下载 | NIKO SEMICONDUCTOR CO., LTD. |
| 10 | PDTA114EU,115 | 晶体管类型:1个PNP-预偏置;功率(Pd):200mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V; | 下载 | Rubycon Corporation |
| 11 | PDTC114EU,115 | 1 NPN - Pre Biased 200mW 100mA 50V SOT-323-3 Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 12 | PDTD113ZUX | 晶体管类型:1个NPN-预偏置;功率(Pd):425mW;集电极电流(Ic):-;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;集射极... | 下载 | Rubycon Corporation |
| 13 | PDTA114YU,115 | | 下载 | Rubycon Corporation |
| 14 | PMST3906,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):200mW;集电极截止电流(Icbo):50nA;集电极-发射... | 下载 | Rubycon Corporation |
| 15 | PMST4403,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):200mW;集电极截止电流(Icbo):50nA;集电极-发射... | 下载 | Rubycon Corporation |
| 16 | PJ78M05TE | | 下载 | Dongguan Pingjingsemi Technology Co., Ltd. |
| 17 | PTFR0603B1K50P9 | 电阻类型:薄膜电阻;阻值:1.5kΩ;精度:±0.1%;功率:100mW; | 下载 | RESI |
| 18 | PD616BA | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):55A;功率(Pd):38W;导通电阻(RDS(on)@Vgs,Id):7mΩ@10V,20A;阈... | 下载 | NIKO SEMICONDUCTOR CO., LTD. |
| 19 | PMEG3020EGW115 | NOW NEXPERIA PMEG3020EGW RECTIFI | 下载 | Nexperia |
| 20 | PZ1D4V2H | 二极管配置:独立式;稳压值(标称值):5.1V;精度:-;功率:500mW;反向电流(Ir):5uA@4.2V;阻抗(Zzt):55Ω; | 下载 | Shanghai Prisemi Electronics Co.,Ltd |
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