找到162a18719x相关的规格书共5,220
型号厂商描述数据手册替代料参考价格
MX69F162C3BBXBI-90MCNIX[MacronixInternational] MX69F162C3BBXBI-90 - 16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY - Macronix International获取价格
P6KE170ABrightking极性:单向;反向截止电压(Vrwm):145V;击穿电压:162V;峰值脉冲电流(Ipp)@10/1000μs:2.6A;最大钳位电压:234V;获取价格
0805USBN-162MRCCoilcraft Inc.COILCRAFT - 0805USBN-162MRC - Choke, Common Mode, 182 nH, 0805USBN Series, 2 kohm, 450 mA, 2.2mm x 1.4mm x 0.93mm获取价格
ERJ6ENF1623VPanasonic CorporationRes, 162K, 1%, 0.125W, 0805, Thick Film; Resistor Case Style:0805 [2012 Metric]; Resistance:162Kohm; Product Range:erj6E Series; Voltage Rating:150V; Resistor Element Material:thick Film; Power Rating:125Mw; Resistance Tolerance:± Rohs Compliant: Yes获取价格
MR18R162GAF0-CT9SAMSUNG[Samsungsemiconductor] MR18R162GAF0-CT9 - (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V - Samsung semiconductor获取价格
P6KE170CACreatek Microelectronics极性:双向;反向截止电压(Vrwm):145V;击穿电压:162V;反向漏电流(Ir):1uA;峰值脉冲电流(Ipp)@10/1000μs:2.6A;最大钳位电压:234V;获取价格
MR18R162GAF0-CK8SAMSUNG[Samsungsemiconductor] MR18R162GAF0-CK8 - (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V - Samsung semiconductor获取价格
SMF100AJSMICRO SEMICONDUCTOR极性:单向;反向截止电压(Vrwm):100V;击穿电压:111V;反向漏电流(Ir):1uA;峰值脉冲电流(Ipp)@10/1000μs:1.2A;最大钳位电压:162V;获取价格
HY3606PHUAYI MICROELECTRONICS CO.,LTD.类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):162A;功率(Pd):214W;导通电阻(RDS(on)@Vgs,Id):4.5mΩ@10V,81A;阈值电压(Vgs(th)@Id):4V@250uA;获取价格
TSP10N60MShenzhen Truesemi Semiconductor Co., Ltd.类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):10A;功率(Pd):162W;导通电阻(RDS(on)@Vgs,Id):800mΩ;阈值电压(Vgs(th)@Id):5V@250uA;获取价格
5.0SMDJ90CAJiangsu shunye Electronics Co., LtdTVS 5000W 反向截止电压(Vrwm) 90 击穿电压(V) 100-111 测试电流(mA) 1 反向漏电流(Ir) 2 峰值脉冲电流(Ipp)@10/1401μs 48.6 最大钳位电压(V) 162获取价格
SMAJ100CA/TR13Brightking极性:双向;反向截止电压(Vrwm):100V;击穿电压:111V;反向漏电流(Ir):1uA;峰值脉冲电流(Ipp)@10/1000μs:2.5A;最大钳位电压:162V;获取价格
SMAJ100CAHANGZHOU DONGWO ELECTRONIC TECHNOLOGY CO. LTD.极性:双向;反向截止电压(Vrwm):100V;击穿电压:111V;反向漏电流(Ir):1uA;峰值脉冲电流(Ipp)@10/1000μs:2.47A;最大钳位电压:162V;获取价格
MR18R162GAF0-CM8SAMSUNG[Samsungsemiconductor] MR18R162GAF0-CM8 - (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V - Samsung semiconductor获取价格
MR16R162GAF0-CK8SAMSUNG[Samsungsemiconductor] MR16R162GAF0-CK8 - (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V - Samsung semiconductor获取价格
SMF100CAJSMICRO SEMICONDUCTOR极性:双向;反向截止电压(Vrwm):100V;击穿电压(最小值):111V;击穿电压(最大值):123V;反向漏电流(Ir):1uA;峰值脉冲电流(Ipp)@10/1000μs:1.2A;最大钳位电压:162V;获取价格
1.5SMC170CA/TR13Brightking极性:双向;反向截止电压(Vrwm):145V;击穿电压(最小值):162V;击穿电压(最大值):179V;反向漏电流(Ir):1uA;峰值脉冲电流(Ipp)@10/1000μs:6.5A;最大钳位电压:234V;获取价格
1SMC100A TR13 PBFREECentral反向截止电压(Vrwm):100V;击穿电压(最小值):111V;击穿电压(最大值):-;反向漏电流(Ir):-;峰值脉冲电流(Ipp)@10/1000μs:9.3A;最大钳位电压:162V;峰值脉冲功率(Ppp)@10/1000μs:1.5kW;获取价格
1SMC100CA TR13 PBFREECentral极性:-;反向截止电压(Vrwm):100V;击穿电压(最小值):111V;击穿电压(最大值):-;反向漏电流(Ir):-;峰值脉冲电流(Ipp)@10/1000μs:9.3A;最大钳位电压:162V;峰值脉冲功率(Ppp)@10/1000μs:1.5kW;获取价格
3SMC100A TR13 PBFREECentral极性:-;反向截止电压(Vrwm):100V;击穿电压(最小值):111V;击穿电压(最大值):-;反向漏电流(Ir):-;峰值脉冲电流(Ipp)@10/1000μs:18.6A;最大钳位电压:162V;峰值脉冲功率(Ppp)@10/1000μs:3kW;获取价格