找到368相关的规格书共1,331
型号厂商描述数据手册替代料参考价格
M74HCT367C1RSTMICROELECTRONICS[STMicroelectronics] M74HCT367C1R - HEX BUS BUFFER 3-STATE HCT367 NONINVERTING, HCT368 INVERTING - STMicroelectronics获取价格
M74HC367C1RSTMICROELECTRONICS[STMicroelectronics] M74HC367C1R - HEX BUS BUFFER 3-STATE HC367 NON INVERTING, HC368 INVERTING - STMicroelectronics获取价格
PIC16F877A-I--PMicrochip Technology Inc.8位MCU单片机 PIC® 16F PDIP40_52.26X13.84MM 368x8B 4~5.5V PIC获取价格
PIC16F886-I--SPMicrochip Technology Inc.8位MCU单片机 PIC® 16F SPDIP28_34.67X7.24MM 368x8B 2~5.5V PIC获取价格
S1008R-121JAPI Delevan Inc.固定电感器 1008 120nH ±5% 1.06A 100mΩ 368MHz 40@25MHz获取价格
M74HC367STMICROELECTRONICS[STMicroelectronics] M74HC367 - HEX BUS BUFFER 3-STATE HC367 NON INVERTING, HC368 INVERTING - STMicroelectronics获取价格
FCH47N60NFMurata Manufacturing Co., Ltd.类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):45.8A;功率(Pd):368W;导通电阻(RDS(on)@Vgs,Id):65mΩ@10V,23.5A;阈值电压(Vgs(th)@Id):4V@250uA;获取价格
FCH47N60NMurata Manufacturing Co., Ltd.类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):47A;功率(Pd):368W;导通电阻(RDS(on)@Vgs,Id):62mΩ@10V,23.5A;阈值电压(Vgs(th)@Id):4V@250μA;获取价格
87797-1800MOLEX10[MolexElectronicsLtd.] 87797-1800 - 2.54mm (.100) Pitch C-Grid® Header, Through Hole, Dual Row Dual Body, Vertical, 18 Circuits, Gold (Au) Flash Plating, 9.35mm (.368) Stacking Height, Tray Packaging - Molex Electronics Ltd.获取价格
1.5SMC350CA/TR13Brightking极性:双向;反向截止电压(Vrwm):300V;击穿电压(最小值):332V;击穿电压(最大值):368V;反向漏电流(Ir):1uA;峰值脉冲电流(Ipp)@10/1000μs:3.2A;最大钳位电压:482V;获取价格
NCE30H11KWUXI NCE POWER CO., Ltd.类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):110A;功率(Pd):120W;导通电阻(RDS(on)@Vgs,Id):3.2mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.6V@250uA;栅极电荷(Qg@Vgs):70nC@10V;输入电容(Ciss@Vds):2.987nF@15V;反向传输电容(Crss@Vds):368pF@15V;工作温度:-55℃~+175℃@(Tj);获取价格