找到“AD536”相关的规格书共1,915个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| ERJ8ENF5360V | Panasonic Corporation | PANASONIC - ERJ8ENF5360V - SMD Chip Resistor, 1206 [3216 Metric], 536 ohm, ERJ8EN Series, 200 V, Thick Film, 250 mW | 获取价格 | ||
| CA45-D6R3K477T | Hunan Xiangyi Zhongyuan Technology Co., Ltd. | 钽电容 D7343-31 470µF ±10% 6.3V 400mΩ 7.30 x 4.30mm 3.10mm 536mA | 获取价格 | ||
| ATSAMA5D31A-CU | Microchip Technology Inc. | 32位MCU微控制器 ARM® Cortex®-A5 微处理器 IC SAMA5D3 1 核，32 位 536MHz 324-LFBGA（15x15） | 获取价格 | ||
| TC5565APL-10 | TOSHIBA[ToshibaSemiconductor] | TC5565APL-10 - 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology - Toshiba Semiconductor | 获取价格 | ||
| TC5565 | TOSHIBA[ToshibaSemiconductor] | TC5565 - 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology - Toshiba Semiconductor | 获取价格 | ||
| ERJP03F5363V | Panasonic Corporation | PANASONIC - ERJP03F5363V - SMD Chip Resistor, 536 kohm, ± 1%, 200 mW, 0603 [1608 Metric], Thick Film, High Power, Anti-Surge | 获取价格 | ||
| ERJPA3F5363V | Panasonic Corporation | PANASONIC - ERJPA3F5363V - SMD Chip Resistor, 536 kohm, ± 1%, 250 mW, 0603 [1608 Metric], Thick Film, High Power, Anti-Surge | 获取价格 | ||
| ERJP06F5360V | Panasonic Corporation | PANASONIC - ERJP06F5360V - SMD Chip Resistor, 536 ohm, ± 1%, 500 mW, 0805 [2012 Metric], Thick Film, High Power, Anti-Surge | 获取价格 | ||
| ERJP03F5360V | Panasonic Corporation | PANASONIC - ERJP03F5360V - SMD Chip Resistor, 536 ohm, ± 1%, 200 mW, 0603 [1608 Metric], Thick Film, High Power, Anti-Surge | 获取价格 | ||
| M2S150-1FCSG536 | Microsemi | ARM® Cortex®-M3 System On Chip (SOC) IC SmartFusion®2 FPGA - 150K Logic Modules 512KB 64KB 166MHz 536-BGA (16x16) | 获取价格 | ||
| CA45-D010K337T | Hunan Xiangyi Zhongyuan Technology Co., Ltd. | 钽电容 D7343-31 330µF ±10% 10V 400mΩ 7.30 x 4.30mm 3.10mm 536mA | 获取价格 | ||
| BQ76PL536A-Q1 | Texas Instruments | bq76PL536A-Q1 3-to-6 Series Cell Lithium-Ion Battery Monitor and Secondary Protection IC for EV and HEV Applications datasheet (Rev. A) | 获取价格 | ||
| TC5565AFL-15 | TOSHIBA[ToshibaSemiconductor] | TC5565AFL-15 - 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology - Toshiba Semiconductor | 获取价格 | ||
| CAT24C512C8UTR | Murata Manufacturing Co., Ltd. | CAT24C512C8UTR 是一款 512-Kb CMOS 串行 EEPROM，内部组织为 65,536 个词，每个词 8 位。它具有 128 字节页写缓冲区，支持 Standard (100 kHz)、Fast (400 kHz) 和 Fast?Plus (1 MHz) I2C 协议。写入操作可通过将 WP 引脚置于高电平来禁止（这会保护整个内存）。外部地址引脚可在同一总线上实现最多八个 CAT24C512C8UTR 器件的寻址。片上 ECC（错误修正代码）使得该器件适用于高可靠性应用。 | 获取价格 | ||
| CAT24C512XI-T2 | Murata Manufacturing Co., Ltd. | CAT24C512 是一款 EEPROM 串行 512-Kb I2C，内部组织为 65,536 个词，每个词 8 位。它具有 128 字节页写入缓存，支持标准 (100 kHz)、快速 (400 kHz) 和超快 (1 MHz) I2C 协议。写入操作可通过将 WP 引脚置于高电平类禁止（这样会保护整个内存）。外部地址引脚使其能够在同一个总线上放置最多八个 CAT24C512 器件。片上 ECC（错误修正代码）使得该器件适用于高可靠性应用。 | 获取价格 |
