| SS510A | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| FS2302A | Shenzhen FuxinSemi Technology Co., Ltd | FS2302A | | | 获取价格 |
| MMBD7000LT1G | Shenzhen FuxinSemi Technology Co., Ltd | 开关二极管 VRWM=53V IO=200mA PD=225mW SOT23 | | | 获取价格 |
| SM712 | Shenzhen FuxinSemi Technology Co., Ltd | TVS二级管 VRWM=7V,12V IR=1uA Vc=20V,30V P=300W | | | 获取价格 |
| S8050 | Shenzhen FuxinSemi Technology Co., Ltd | 通用三极管 NPN 25V 500mA SOT23 | | | 获取价格 |
| RB751S-40 | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| BAS16XV2T1G | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| FR1MD3 | Shenzhen FuxinSemi Technology Co., Ltd | FR1MD3 | | | 获取价格 |
| DFLS2100 | Shenzhen FuxinSemi Technology Co., Ltd | DFLS2100 | | | 获取价格 |
| HER308G | Shenzhen FuxinSemi Technology Co., Ltd | HER308G | | | 获取价格 |
| FSR05 | Shenzhen FuxinSemi Technology Co., Ltd | TVS二极管 VRWM=5V VBR(Min)=6V VC=9V IPP=1A Ppp=60W SOT143 | | | 获取价格 |
| BAV99LT1G | Shenzhen FuxinSemi Technology Co., Ltd | BAV99LT1G | | | 获取价格 |
| ABS210 | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| MCR100-8-23L | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| MMBTA42 | Shenzhen FuxinSemi Technology Co., Ltd | 晶体管类型:PNP;集射极击穿电压(Vceo):300V;集电极电流(Ic):300mA;功率(Pd):350mW;集电极截止电流(Icbo):250nA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):200mV@20mA,2mA;直流电流增益(hFE@Ic,Vce):100@10mA,10V;特征频率(fT):50MHz;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| MCR100-8W | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| BT131G | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| BT169D | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| BTA16-800BW | Shenzhen FuxinSemi Technology Co., Ltd | 双向可控硅 | | | 获取价格 |
| MMBT3906 | Shenzhen FuxinSemi Technology Co., Ltd | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):200mW;直流电流增益(hFE@Ic,Vce):100@10mA,1V; | | | 获取价格 |
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