| IRF5805TRPBF-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.8A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):49mΩ@10V,4.8A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| NTGD3148NT1G-VB | VBsemi Electronics Co. Ltd | 类型:2个N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):22mΩ@4.5V,6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AP2625GY-VB | VBsemi Electronics Co. Ltd | 类型:2个P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):75mΩ@4.5V,4A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| FDC6306P-VB | VBsemi Electronics Co. Ltd | 类型:2个P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):75mΩ@4.5V,4A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| VBFB165R04 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4.5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):2Ω@10V,4.5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AOD484-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):50A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):7mΩ@10V,50A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| NTD24N06LT4G-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):35A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):25mΩ@10V,35A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| IRLR3110ZPBF-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):85A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):7.5mΩ@10V,85A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| SUD50P06-15L-GE3-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):50A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):20mΩ@10V,50A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| IRFR5305TRPBF-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=60V VGS=±20V ID=50A RDS(ON)=25mΩ@4.5V TO252 | | | 获取价格 |
| IRF7103TRPBF-VB | VBsemi Electronics Co. Ltd | MOSFETs 2个N沟道 耐压:60V 电流:7A SO-8 | | | 获取价格 |
| FDN5630-NL-VB | VBsemi Electronics Co. Ltd | MOSFETs N沟道 耐压:60V 电流:4A SOT-23 | | | 获取价格 |
| SM2307PSAC-TRG-VB | VBsemi Electronics Co. Ltd | MOSFETs P沟道 耐压:30V SOT-23 | | | 获取价格 |
| ME4626A-VB | VBsemi Electronics Co. Ltd | MOSFETs N沟道 耐压:30V 电流:18A SO-8 | | | 获取价格 |
| IRLMS5703TRPBF-VB | VBsemi Electronics Co. Ltd | MOSFETs P沟道 耐压:30V 电流:4.8A TSOP-6 | | | 获取价格 |
| IRF9310TRPBF-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=30V VGS=±20V ID=11A RDS(ON)=8mΩ@4.5V SOIC8_150MIL | | | 获取价格 |
| SI7483ADP-T1-GE3-VB | VBsemi Electronics Co. Ltd | MOSFETs P沟道 耐压:30V 电流:120A DFN8_5X6MM_EP | | | 获取价格 |
| K3148-VB | VBsemi Electronics Co. Ltd | MOSFETs N沟道 耐压:100V 电流:50A TO-220F-3 | | | 获取价格 |
| FDD13AN06A0-VB | VBsemi Electronics Co. Ltd | MOSFETs N沟道 耐压:60V 电流:60A TO-252 | | | 获取价格 |
| FDS4935BZ-NL&38-VB | VBsemi Electronics Co. Ltd | MOSFETs 2个P沟道 耐压:30V 电流:7.3A SO-8 | | | 获取价格 |
