ESD8V0R1B02ELSE6327XTSA1 数据手册
TVS Diodes
Transient Voltage Suppressor Diodes
ESD8V0R1B Series
Bi-directional Low Capacitance TVS Diode
ESD8V0R1B-02EL
ESD8V0R1B-02ELS
Data Sheet
Revision 2.0, 2010-12-15
Final
Industrial and Multi-Market
Edition 2010-12-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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Information
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ESD8V0R1B Series
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 1.0, 2010-10-20
Revision 2.0, 2010-12-15
Carrier Tape drawing for TSSLP-2-2 Package updated
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
Final Data Sheet
3
Revision 2.0, 2010-12-15
ESD8V0R1B Series
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
1.1
1.2
Bi-directional Low Capacitance TVS Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
3.1
3.2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Electrical Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Typical Performance characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . 10
4
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6
6.1
6.2
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PG-TSLP-2-18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PG-TSSLP-2-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Final Data Sheet
4
Revision 2.0, 2010-12-15
ESD8V0R1B Series
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
a) Pin Configuration and b) Schematic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Definitions of electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Non-repetitive peak pulse power: Ppk = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Power derating curve: Ppk = f (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Reverse characteristic, IR = (VR), TA = parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Line capacitance CL = f(VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
1 Line, bi-directional protection with ESD diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Ordering Information Scheme (examples) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
PG-TSLP-2-18: Package Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PG-TSLP-2-18: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PG-TSLP-2-18: Packing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PG-TSLP-2-18: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PG-TSSLP-2-2: Package Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
PG-TSSLP-2-2: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
PG-TSSLP-2-2: Packing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
PG-TSSLP-2-2: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
5
Revision 2.0, 2010-12-15
ESD8V0R1B Series
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Rating at TA = 25 °C, unless otherwise specified. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ESD characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Final Data Sheet
6
7
8
8
9
9
Revision 2.0, 2010-12-15
ESD8V0R1B Series
Bi-directional Low Capacitance TVS Diode
1
Bi-directional Low Capacitance TVS Diode
1.1
Features
•
•
•
•
•
•
•
ESD / Transient protection of data lines in 3.3 / 5 / 12 V applications according to :
• IEC61000-4-2 (ESD) : ±20 kV (air) and ±18 kV (contact)
• IEC61000-4-4 (EFT) : 40 A (5/50ns)
Extremely small form factor down to 0.62 x 0.32 x 0.31 mm²
Maximum working voltage: VRWM = -8 / +14 V
Very low reverse current: IR < 1 nA (typical)
Very low series inducttance down to : LS = 0.2 nH (typical)
Low capacitance CL = 4 pF I/O to GND (typical)
Pb-free and Halogen-Free package (RoHS compliant)
1.2
•
•
•
Application Examples
Keypad, touchpad, buttons, convenience keys
LCD displays, Camera, audio lines, mobile communication, Consumer products (E-Book, MP3, DVD, DSC, ...)
Notebooks tablets and desktop computers and their peripherals
2
Product Description
Pin 1
Pin 2
Pin 2
TSLP-2
Pin 1
Pin 2
Pin 1
TSSLP -2
b) Schematic diagram
a) Pin configuration
Figure 1
a) Pin Configuration and b) Schematic Diagram
Table 1
Ordering information
Type
Package
Configuration
ESD8V0R1B-02EL
PG-TSLP-2-18
1 line, bi-directional
R
ESD8V0R1B-02ELS
PG-TSSLP-2-2
1 line, bi-directional
D
Final Data Sheet
7
Marking code
Revision 2.0, 2010-12-15
ESD8V0R1B Series
Characteristics
3
Characteristics
Table 2
Maximum Rating at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
VESD
-20
–
20
kV
VESD
-18
–
18
kV
IPP
-1
–
1
A
Operating temperature
TOP
-55
–
150
°C
Storage temperage
1) VESD according to IEC61000-4-2
2) IPP according to IEC61000-4-5
Tstg
-65
–
150
°C
ESD air discharge
1)
ESD contact discharge
1)
Peak pulse current (tp = 8/20 μs)
3.1
2)
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Rdyn … Differential series resistance
VBR … Breakdown voltage ( I BR = 1mA typ.)
I
VRWM … Reverse working voltage maximum
IPP
VCL … Clamping voltage
IPP … Peak pulse current (t P=8/20μs typ.)
Rdyn
IBR
VCL
V BR
IRWM
VRWM
VRWM
IRWM
IBR
VBR
VCL
V
Pin 2
Rdyn
IPP
V
I
Pin 1
Diode_Characteristic_Curve_bidirectional .vsd
Figure 2
Definitions of electrical characteristics
Table 3
DC characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Reverse working voltage VRWM
-8
–
14
V
from Pin2 to Pin1
Breakdown voltage
8.5
11
14
V
IR = 1 mA,
VBR
from Pin1 to Pin2
Breakdown voltage
VBR
14.5
17
20
V
IR = 1 mA,
from Pin2 to Pin1
Reverse current
Final Data Sheet
IR
–
10pF), Low (