IRGB4065PBF

PD - 97059B PDP TRENCH IGBT Features Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package l IRGB4065PbF IRGS4065PbF Key Parameters 300 1.75 205 150 V V A °C VCE m in VCE(ON) typ. @ IC = 70A IRP m ax @ TC= 25°C c T J m ax C C C E C G D2Pak IRGS4065DPbF G E E C G n-channel TO-220 IRGB4065DPbF G Gate C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw Max. ±30 70 40 205 178 71 1.4 -40 to + 150 300 Units V A c W W/°C °C 10lb in (1.1N m) x x N Thermal Resistance RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 2 Junction-to-Ambient (PCB Mount) , D Pak d Parameter Typ. ––– 0.50 ––– ––– Max. 0.70 ––– 62 40 Units °C/W d d www.irf.com 1 09/05/06 IRGB/S4065PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVCES ∆ΒVCES/∆TJ Collector-to-Emitter Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. 300 ––– ––– ––– Typ. Max. Units ––– 0.23 1.20 1.35 1.75 2.35 2.00 ––– -11 2.0 50 ––– ––– 26 62 20 30 26 170 160 30 28 250 310 ––– 875 975 2200 110 55 5.0 13 ––– ––– 1.40 ––– 2.10 ––– ––– 5.0 ––– 25 ––– 100 -100 ––– ––– ––– — — — — — — — — ––– ––– ––– ––– ––– ––– ––– nH ––– pF ns µJ ns ns S nC nA V mV/°C µA Conditions VGE = 0V, ICE = 1.0 mA V V/°C Reference to 25°C, ICE = 1.0 mA VGE = 15V, ICE = 25A e VGE = 15V, ICE = 40A e V VGE = 15V, ICE = 70A e VGE = 15V, ICE = 120A e VGE = 15V, ICE = 70A, TJ = 150°C VCE = VGE, ICE = 500µA VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 150°C VGE = 30V VGE = -30V VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15V See Fig. 14 IC = 25A, VCC = 180V RG = 10Ω, L=200µH, LS= 150nH TJ = 25°C IC = 25A, VCC = 180V RG = 10Ω, L=200µH, LS= 150nH TJ = 150°C VCC = 240V, VGE = 15V, RG= 5.1Ω L = 220nH, C= 0.40µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.40µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 100°C VGE = 0V VCE = 30V ƒ = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact See Fig.13 VCE(on) Static Collector-to-Emitter Voltage ––– ––– ––– VGE(th) ∆VGE(th)/∆TJ ICES IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse 2.6 ––– ––– ––– ––– ––– ––– ––– ––– — — — — — — — — 100 ––– ––– Ciss Coss Crss LC LE Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance ––– ––– ––– ––– ––– Notes:  Half sine wave with duty cycle = 0.25, ton=1µsec. ‚ Rθ is measured at TJ of approximately 90°C. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRGB/S4065PbF 280 TOP 280 V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE TOP 240 200 ICE (A) BOTTOM 240 200 ICE (A) BOTTOM V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V) 160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V) Fig 1. Typical Output Characteristics @ 25°C 280 TOP V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE Fig 2. Typical Output Characteristics @ 75°C 360 TOP V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 240 200 ICE (A) BOTTOM 320 280 240 ICE (A) BOTTOM 160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V) 200 160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V) Fig 3. Typical Output Characteristics @ 125°C 600 ICE, Collector-to-Emitter Current (A) Fig 4. Typical Output Characteristics @ 150°C 20 IC = 25A 500 15 400 300 200 T J = 25°C T J = 125°C VCE (V) 10 T J = 25°C T J = 150°C 5 100 0 0 5 10 15 20 VGE, Gate-to-Emitter Voltage (V) 0 0 5 10 VGE (V) 15 20 Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage www.irf.com 3 IRGB/S4065PbF 80 70 IC, Collector Current (A) 220 200 Repetitive Peak Current (A) 180 160 140 120 100 80 60 40 20 0 ton= 1µs Duty cycle = 0.25 Half Sine Wave 60 50 40 30 20 10 0 0 25 50 75 100 125 150 25 50 75 100 125 150 Fig 7. Maximum Collector Current vs. Case Temperature 1000 V CC = 240V 900 Energy per Pulse (µJ) T C, Case Temperature (°C) Case Temperature (°C) Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1000 L = 220nH C = 0.4µF 100°C L = 220nH C = variable 900 Energy per Pulse (µJ) 100°C 800 700 600 500 400 300 200 800 700 600 500 400 160 170 180 190 200 210 220 230 25°C 25°C 150 160 170 180 190 200 210 220 230 240 VCE, Collector-to-Emitter Voltage (V) IC, Peak Collector Current (A) Fig 9. Typical EPULSE vs. Collector Current 1400 V CC = 240V 1200 Energy per Pulse (µJ) Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage 1000 OPERATION IN THIS AREA LIMITED BY V CE(on) L = 220nH t = 1µs half sine C= 0.4µF 1000 800 600 C= 0.2µF 400 200 25 50 75 100 125 150 TJ, Temperature (ºC) 100 IC (A) C= 0.3µF 10µsec 100µsec 10 1msec 1 1 10 VCE (V) 100 1000 Fig 11. EPULSE vs. Temperature Fig 12. Forrward Bias Safe Operating Area 4 www.irf.com IRGB/S4065PbF 100000 VGE, Gate-to-Emitter Voltage (V) VGS = 0V, f = 1 MHZ C ies = C ge + C gd , C ce SHORTED Cres = C gc Coes = Cce + Cgc 25 IC = 25A 20 VCE = 240V VCE = 200V VCE = 150V 10000 Capacitance (pF) Cies 1000 15 10 100 Coes Cres 5 10 0 50 100 150 200 250 300 VCE, Collector-toEmitter-Voltage(V) 0 0 10 20 30 40 50 60 70 80 Q G, Total Gate Charge (nC) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 1 D = 0.50 Thermal Response ( Z thJC ) 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ2 τ3 τ4 τ4 Ri (°C/W) 0.0239 0.1179 0.3264 0.2324 τi (sec) 0.000011 0.000047 0.000922 0.004889 0.01 τ1 Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRGB/S4065PbF A RG DRIVER L C PULSE A VCC B PULSE B RG Ipulse DUT tST Fig 16a. tst and EPULSE Test Circuit Fig 16b. tst Test Waveforms VCE Energy IC Current 0 L DUT 1K VCC Fig 16c. EPULSE Test Waveforms Fig. 17 - Gate Charge Circuit (turn-off) 6 www.irf.com IRGB/S4065PbF Dimensions are shown in millimeters (inches) TO-220AB Package Outline TO-220AB Part Marking Information (;$03/( 7+,6 ,6 $1 ,5) /27 &2'(  $66(0%/(' 21 ::   ,1 7+( $66(0%/< /,1( & 1RWH 3 LQ DVVHPEO\ OLQH SRVLWLRQ LQGLFDWHV /HDG  )UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27 &2'( 3$57 180%(5 '$7( &2'(