找到“IRF640STRL”相关的规格书共3,163个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| M29W640GB60ZA6F | NUMONYX[NumonyxB.V] | M29W640GB60ZA6F - 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory - Numonyx B.V | 获取价格 | ||
| M29W640GB60NB6E | NUMONYX[NumonyxB.V] | M29W640GB60NB6E - 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory - Numonyx B.V | 获取价格 | ||
| M29W640GB60NA6F | NUMONYX[NumonyxB.V] | M29W640GB60NA6F - 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory - Numonyx B.V | 获取价格 | ||
| M29W640FT60ZA6F | NUMONYX[NumonyxB.V] | M29W640FT60ZA6F - 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory - Numonyx B.V | 获取价格 | ||
| M29W640FT60ZA6E | STMICROELECTRONICS[STMicroelectronics] | M29W640FT60ZA6E - 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory - STMicroelectronics | 获取价格 | ||
| M29W640FB70ZA6F | NUMONYX[NumonyxB.V] | M29W640FB70ZA6F - 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory - Numonyx B.V | 获取价格 | ||
| M29W640FB70N6F | NUMONYX[NumonyxB.V] | M29W640FB70N6F - 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory - Numonyx B.V | 获取价格 | ||
| M29W640FB70N6E | NUMONYX[NumonyxB.V] | M29W640FB70N6E - 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory - Numonyx B.V | 获取价格 | ||
| M29W640FB60ZA6F | NUMONYX[NumonyxB.V] | M29W640FB60ZA6F - 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory - Numonyx B.V | 获取价格 | ||
| M29W640FB60N6E | NUMONYX[NumonyxB.V] | M29W640FB60N6E - 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory - Numonyx B.V | 获取价格 | ||
| M29W640FB | NUMONYX[NumonyxB.V] | M29W640FB - 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory - Numonyx B.V | 获取价格 | ||
| ELLVFG100MC | Panasonic Corporation | Power Choke Shielded Wirewound 10uH 20% 100KHz 640mA 380mOhm DCR 1212 Embossed Carrier T/R | 获取价格 | ||
| 0402F-R14K-08 | Fastron technologies PTY LTD | Inductor RF Chip Molded Wirewound 0.14uH 640Ohm 10% 7.9MHz Ferrite 0.64A 0.26Ohm DCR 0402 T/R | 获取价格 | ||
| FHW0402UC2N7KST | GUANGDONG FENGHUA ADVANCED TECHNOLOGY HOLOING CO.,LTD. | 电感值:2.7nH;精度:±10%;额定电流:640mA;饱和电流(Isat):-;直流电阻(DCR):120mΩ; | 获取价格 | ||
| QX2306L22T | QX Micro Devices Co.,Ltd. | 功能类型:升压型;输出类型:-;输入电压:640mV;输出电压:2.2V;输出电流(最大值):800mA; | 获取价格 | ||
| SPHWH1L5N607YET3A2 | Samsung Group | LED 照明 LH502C 白色，天然 4000K 3 阶麦克亚当椭圆 6.1V 640mA 120° 2020（5050 公制） | 获取价格 | ||
| SPHWH1L5N605YEU3A2 | Samsung Group | LED 照明 LH502C 白色，暖色 3500K 3 阶麦克亚当椭圆 6.1V 640mA 120° 2020（5050 公制） | 获取价格 | ||
| SPHWH1L5N605YET3A2 | Samsung Group | LED 照明 LH502C 白色，天然 4000K 3 阶麦克亚当椭圆 6.1V 640mA 120° 2020（5050 公制） | 获取价格 | ||
| SPHWH1L5N603YER5A2 | Samsung Group | LED 照明 LH502C 白色，冷色 5000K 5 阶麦克亚当椭圆 6.1V 640mA 120° 2020（5050 公制） | 获取价格 | ||
| BS640HD8V | AMD[AdvancedMicroDevices] | BS640HD8V - 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory - Advanced Micro Devices | 获取价格 |
