DHG50X1200NA

DHG50X1200NA preliminary Sonic Fast Recovery Diode VRRM = 1200 V I FAV = 2x t rr = 25 A 200 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG50X1200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213c DHG50X1200NA preliminary Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1200 V 1200 V VR = 1200 V TVJ = 25°C 30 µA VR = 1200 V TVJ = 125°C 0.5 mA IF = 25 A TVJ = 25°C 2.11 V IF = 50 A 2.74 V IF = 25 A 2.09 V IF = 50 A TVJ = 125 °C TC = 65 °C rectangular 2.88 V T VJ = 150 °C 25 A TVJ = 150 °C 1.23 V 30 mΩ d = 0.5 for power loss calculation only 1.2 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 600 V f = 1 MHz TVJ = 25°C 11 pF TVJ = 25 °C 23 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.1 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 30 A; VR = 600 V -di F /dt = 600 A/µs 100 200 W A TVJ = 125 °C 30 A TVJ = 25 °C 200 ns TVJ = 125 °C 350 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200213c DHG50X1200NA preliminary Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 100 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App d Spb/Apb VISOL Product Marking Logo XXXXX ® yywwZ 123456 Date Code Location Ordering Standard 8.6 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Part description Part Number UL D H G 50 X 1200 NA = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Parallel legs Reverse Voltage [V] SOT-227B (minibloc) Lot# Ordering Number DHG50X1200NA Equivalent Circuits for Simulation V0 10.5 t = 1 second isolation voltage t = 1 minute I terminal to terminal terminal to backside creepage distance on surface | striking distance through air R0 * on die level Delivery Mode Tube Quantity 10 Code No. 507766 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.23 R0 max slope resistance * 28 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DHG50X1200NA V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200213c DHG50X1200NA preliminary Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213c DHG50X1200NA preliminary Fast Diode 60 6 70 TVJ = 125°C VR = 600 V 50 60 60 A 5 40 TVJ = 125°C 60 A VR = 600 V 50 IF Qrr 4 30 [A] 30 A IRR 40 30 A [μC] [A] 20 15 A 30 TVJ = 125°C 3 10 TVJ = 25°C 0 0.0 20 15 A 2 0.5 1.0 1.5 2.0 2.5 10 3.0 400 800 1000 400 600 800 1000 diF /dt [A/μs] diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus di/dt Fig. 3 Typ. peak reverse current IRM versus di/dt VF [V] Fig. 1 Typ. Forward current versus VF 600 700 1.6 TVJ = 125°C VR = 600 V 600 TVJ = 125°C 60 A VR = 600 V 500 30 A 1.2 trr Erec 400 [ns] [mJ] 300 0.8 15 A 60 A 30 A 200 15 A 100 200 0.4 400 600 800 1000 diF /dt [A/μs] 600 800 1000 diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus di/dt Fig. 4 Dynamic parameters Qrr, IRM versus TVJ 400 Fig. 6 Typ. recovery energy Erec versus di/dt 2 1 ZthJC [K/W] 0.1 0.001 i 1 2 3 4 0.01 0.1 Ri 0.3413 0.2171 0.3475 0.2941 1 i 0.0025 0.03 0.03 0.08 10 tp [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200213c