IXFB100N50Q3
Q3-Class
HiperFETTM
Power MOSFET
VDSS
ID25
RDS(on)
trr
D
=
=
500V
100A
49m
250ns
G
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
S
PLUS264TM
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
500
V
VDGR
TJ = 25C to 150C, RGS = 1M
500
V
VGSS
Continuous
30
V
VGSM
Transient
40
V
ID25
TC = 25C
100
A
IDM
TC = 25C, Pulse Width Limited by TJM
300
A
IA
TC = 25C
100
A
EAS
TC = 25C
5
J
dv/dt
IS IDM, VDD VDSS, TJ 150C
50
V/ns
PD
TC = 25C
1560
W
G
D
S
G = Gate
S = Source
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
FC
Mounting Force
-55 ... +150
150
-55 ... +150
C
C
C
300
260
°C
°C
30..120/6.7..27
N/lb.
10
g
Low Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
Weight
D
= Drain
Tab = Drain
Features
TJ
TJM
Tstg
Tab
High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
500
VGS(th)
VDS = VGS, ID = 8mA
3.5
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VG S = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
V
6.5
V
200 nA
TJ = 125C
© 2019 IXYS CORPORATION, All Rights Reserved
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
50 A
2.5 mA
49 m
DS100309A(12/19)
IXFB100N50Q3
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
40
VDS = 20V, ID = 0.5 • ID25, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
S
13.8
nF
1690
pF
177
pF
0.12
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
ns
20
ns
50
ns
15
ns
255
nC
110
nC
115
nC
RG = 0.5 (External)
Qgd
40
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qg(on)
Qgs
65
RthJC
0.08C/W
RthCS
0.13
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
100
A
ISM
Repetitive, Pulse Width Limited by TJM
400
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
Note
IF = 50A, -di/dt = 200A/s
3.5
30.0
VR = 100V, VGS = 0V
250 ns
C
A
1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFB100N50Q3
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
100
VGS = 10V
9V
90
VGS = 10V
200
80
160
60
I D - Amperes
I D - Amperes
70
8V
50
40
9V
120
8V
80
30
20
7V
40
7V
10
6V
6V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
4.5
5
10
15
100
3.2
VGS = 10V
V GS = 10V
RDS(on) - Normalized
8V
70
I D - Amperes
30
2.8
80
60
50
7V
40
30
20
6V
10
2.4
I D = 100A
2.0
I D = 50A
1.6
1.2
0.8
5V
0
0.4
0
3.0
1
2
3
4
5
6
7
8
9
10
11
-50
-25
0
25
50
75
100
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 50A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
125
150
125
150
120
V GS = 10V
2.8
o
100
TJ = 125 C
2.6
2.4
80
2.2
I D - Amperes
RDS(on) - Normalized
25
Fig. 4. RDS(on) Normalized to ID = 50A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
90
20
VDS - Volts
VDS - Volts
2.0
1.8
1.6
60
40
1.4
1.2
20
o
TJ = 25 C
1.0
0
0.8
0
20
40
60
80
100
120
140
I D - Amperes
© 2019 IXYS CORPORATION, All Rights Reserved
160
180
200
220
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFB100N50Q3
Fig. 7. Input Admittance
140
Fig. 8. Transconductance
110
o
TJ = - 40 C
100
120
90
80
g f s - Siemens
I D - Amperes
o
80
100
o
TJ = 125 C
o
25 C
60
o
- 40 C
40
25 C
70
o
125 C
60
50
40
30
20
20
10
0
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
0
9.0
20
40
VGS - Volts
100
120
140
16
VDS = 250V
14
I D = 50A
250
I G = 10mA
12
200
V GS - Volts
I S - Amperes
80
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300
150
100
10
8
6
o
TJ = 125 C
o
4
TJ = 25 C
50
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0
50
100
VSD - Volts
150
200
250
300
350
QG - NanoCoulombs
Fig. 11. Capacitance
100000
Fig. 12. Forward-Bias Safe Operating Area
1000
f = 1 MHz
RDS(on) Limit
Ciss
10000
25µs
100
I D - Amperes
Capacitance - PicoFarads
60
I D - Amperes
Coss
1000
100µs
10
o
TJ = 150 C
o
TC = 25 C
Single Pulse
Crss
100
1ms
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1,000
IXFB100N50Q3
Fig. 13. Maximum Transient Thermal Impedance
Z(th)JC - K / W
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2019 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_100N50Q3(Q9)02-24-11
IXFB100N50Q3
PLUS264TM (IXFB) Outline
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFB100N50Q3
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2019 IXYS CORPORATION, All Rights Reserved