IXFB50N80Q2

IXFB50N80Q2 HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 800 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA EAS 50 A 200 A TC = 25°C 50 A TC = 25°C 5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 1135 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 10 g TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Weight G D Tab S G = Gate S = Source D = Drain Tab = Drain Features Double Metal Process for Low Gate Resistance Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Easy to Mount Space Savings High Power Density Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Switch-Mode and Resonant-Mode Power Supplies >500kHz Switching DC-DC Converters DC Choppers Pulse Generation Laser Drivers Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 800 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 5.5 V ± 200 nA TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved 50 µA 3 mA 160 mΩ DS99005D(01/10) IXFB50N80Q2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 32 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 48 S 7200 pF 1200 pF 230 pF 26 ns 25 ns 60 ns 13 ns 260 nC 56 nC 120 nC Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs PLUS264TM (IXFB) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.11 °C/W RthCK 0.13 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 50 A Repetitive Pulse Width Limited by TJM 200 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 25A, VGS = 0V QRM -di/dt = 100A/µs 1.1 µC IRM VR = 100V 8.0 A 300 ns Note: 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXFB50N80Q2 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 100 50 VGS = 10V 7V 45 80 40 70 35 6V ID - Amperes ID - Amperes VGS = 10V 7V 90 30 25 20 15 60 6V 50 40 30 5V 10 20 5 10 0 5V 0 0 1 2 3 4 5 6 7 8 0 3 6 9 12 15 18 21 24 27 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 3.2 50 VGS = 10V VGS = 10V 45 2.8 40 R DS(on) - Normalized 6V ID - Amperes 35 5V 30 25 20 15 2.4 I D = 50A 2.0 I D = 25A 1.6 1.2 10 0.8 5 0.4 0 0 2 4 6 8 10 12 14 16 18 -50 20 -25 0 Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 60 2.8 2.6 VGS = 10V 50 TJ = 125ºC 2.4 2.2 40 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.0 1.8 1.6 30 20 1.4 TJ = 25ºC 1.2 10 1.0 0 0.8 0 10 20 30 40 50 60 70 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 80 90 100 110 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFB50N80Q2 Fig. 8. Transconductance Fig. 7. Input Admittance 100 100 90 90 80 80 g f s - Siemens ID - Amperes 70 TJ = 125ºC 25ºC - 40ºC 60 50 40 TJ = - 40ºC 70 25ºC 60 50 125ºC 40 30 30 20 20 10 10 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 10 20 30 40 VGS - Volts 50 60 70 80 90 100 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 160 9 140 VDS = 400V I D = 25A 8 I G = 10mA 120 100 VGS - Volts IS - Amperes 7 80 60 5 4 3 TJ = 125ºC 40 6 2 TJ = 25ºC 20 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 Fig. 40 12. Maximum Transient Thermal Impedance 80 120 160 200 240 1.000 VSD - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 0.200 f = 1 MHz Ciss 10,000 Z (th)JC - ºC / W Capacitance - PicoFarads 0.100 Coss 1,000 0.010 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_50N80Q2(95)1-18-10-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.