IXYH40N90C3D1

Preliminary Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE(sat) tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 900 900 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 90 40 25 180 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load ICM = 80 @VCE ≤ VCES A PC TC = 25°C 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C z 1.13/10 Nm/lb.in. z 6 g = 25°C = 110°C = 110°C = 25°C, 1ms TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight G C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features z z z z Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Anti-Parallel Ultra Fast Diode High Current Handling Capability International Standard Package Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 950 VGE(th) IC = 250μA, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC Applications V z z TJ = 125°C = 40A, VGE = 15V, Note 1 TJ = 150°C © 2012 IXYS CORPORATION, All Rights Reserved 2.2 2.9 High Power Density Low Gate Drive Requirement 5.5 V 25 750 μA μA z ±100 nA z 2.5 V V z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100441A(02/13) IXYH40N90C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 14 IC = 40A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 40A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 5Ω Note 2 Inductive load, TJ = 125°C IC = 40A, VGE = 15V VCE = 0.5 • VCES, RG = 5Ω Note 2 RthJC RthCS TO-247 (IXYH) Outline 24 S 2170 160 40 pF pF pF 74 18 34 nC nC nC 27 54 1.9 78 110 1.0 ns ns mJ ns ns mJ 1.7 27 54 2.7 87 150 1.2 ns ns mJ ns ns mJ 0.21 0.25 °C/W °C/W 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Emitter Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode (FRED) (TJ = 25°C, Unless Otherwise Specified) Symbol Test Conditions Characteristic Value Min. Typ. Max. VF IF = 30A,VGE = 0V, Note 1 IRM IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C trr VR = 300V TJ = 150°C TJ = 100°C 100 RthJC Notes: 2.8 V V 4 A 1.6 ns 0.9 °C/W 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH40N90C3D1 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 80 VGE = 15V 13V 12V 70 14V 11V 60 160 50 IC - Amperes IC - Amperes VGE = 15V 200 10V 40 30 13V 120 12V 11V 80 9V 20 10V 40 10 9V 8V 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 20 25 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ T J = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 80 30 2.2 VGE = 15V 13V 12V 70 1.8 50 VCE(sat) - Normalized 11V 10V 40 9V 30 20 8V 10 7V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 I C = 80A 1.6 1.4 I 1.2 C = 40A 1.0 0.8 I C = 20A 0.6 6V 0 0 VGE = 15V 2.0 60 IC - Amperes 7V 0 4 0.4 -50 5 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 9 90 TJ = 25ºC 8 80 70 6 IC - Amperes VCE - Volts 7 5 I C = 80A 4 50 TJ = 150ºC 25ºC 40 30 40A 3 60 - 40ºC 20 2 10 20A 1 0 8 9 10 11 12 VGE - Volts © 2012 IXYS CORPORATION, All Rights Reserved 13 14 15 4.5 5.5 6.5 7.5 8.5 VGE - Volts 9.5 10.5 11.5 IXYH40N90C3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 40 16 TJ = - 40ºC VCE = 450V 14 30 25ºC 12 25 150ºC 10 VGE - Volts g f s - Siemens 35 20 15 I G = 10mA 8 6 10 4 5 2 0 I C = 40A 0 0 10 20 30 40 50 60 70 80 90 100 110 0 10 20 Fig. 9. Capacitance 40 50 60 70 Fig. 10. Reverse-Bias Safe Operating Area 90 10,000 f = 1 MHz 80 70 Cies 1,000 60 IC - Amperes Capacitance - PicoFarads 30 QG - NanoCoulombs IC - Amperes Coes 50 40 30 100 Cres 5 10 15 20 25 30 35 TJ = 125ºC 10 RG = 5Ω dv / dt < 10V / ns 0 200 10 0 20 40 300 400 VCE - Volts 500 600 700 800 900 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYH40N90C3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 3.0 Eoff Eon - --I C = 80A VCE = 450V Eon ---- 6 4 I 0.6 C = 40A 0.2 10 15 20 25 Eoff - MilliJoules 1.0 TJ = 125ºC 1.2 TJ = 25ºC 1.0 3 0.6 2 2 0.4 1 0 0.2 0 20 30 30 40 50 1.6 9 1.2 6 I C = 80A 1.1 5 1.0 4 0.9 3 75 100 160 160 140 I C 140 = 40A 120 120 100 I 60 60 0 125 40 40 5 10 15 30 100 tfi 180 td(off) - - - - 160 TJ = 125ºC 90 100 60 TJ = 25ºC 95 90 VCE = 450V 140 85 I C = 40A 120 100 75 80 70 I C = 80A 60 50 30 0 0 60 IC - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 70 80 80 65 40 60 20 25 50 75 TJ - Degrees Centigrade 100 55 125 t d(off) - Nanoseconds 120 t d(off) - Nanoseconds 200 td(off) - - - - RG = 5Ω , VGE = 15V 150 VCE = 450V t f i - Nanoseconds 200 t f i - Nanoseconds tfi 50 25 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature RG = 5Ω , VGE = 15V 40 20 RG - Ohms 180 30 100 = 80A 1 300 20 C 80 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 150 180 VCE = 450V TJ - Degrees Centigrade 250 200 80 0.7 50 180 2 I C = 40A 0.6 220 td(off) - - - - t d(off) - Nanoseconds 7 25 80 TJ = 125ºC, VGE = 15V t f i - Nanoseconds VCE = 450V 1.3 tfi 200 8 Eon - MilliJoules Eoff - MilliJoules ---- RG = 5Ω , VGE = 15V 0.8 70 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 220 10 1.4 60 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 1.5 4 0.8 RG - Ohms Eon 5 Eon - MilliJoules 6 Eon - MilliJoules 1.4 Eoff 7 VCE = 450V 1.4 8 8 RG = 5Ω , VGE = 15V 10 1.8 5 Eoff 1.6 12 TJ = 125ºC , VGE = 15V 2.2 Eoff - MilliJoules 1.8 14 2.6 Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXYH40N90C3D1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 280 td(on) - - - - 60 160 50 120 40 I C = 40A 30 40 50 td(on) - - - - RG = 5Ω , VGE = 15V 160 40 VCE = 450V 25ºC ≤ TJ ≤ 125ºC 120 30 80 20 40 10 t d(on) - Nanoseconds 200 C = 80A t d(on) - Nanoseconds I 80 tri 70 t r i - Nanoseconds tri TJ = 125ºC, VGE = 15V VCE = 450V t r i - Nanoseconds 200 80 240 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 20 0 0 10 5 10 15 20 25 0 20 30 30 40 50 60 70 80 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 240 36 tri td(on) - - - - RG = 5Ω , VGE = 15V 200 34 160 I C 32 = 80A 120 30 80 28 I C = 40A 40 26 0 25 50 75 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 450V 100 24 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_40N90C3D1(5D) 02-03-12 IXYH40N90C3D1 1000 60 A A nC 50 IF 30 800 Qr IF= 60A IF= 30A IF= 15A 40 TVJ=150°C 30 25 600 20 15 TVJ=100°C 400 20 10 TVJ=25°C 0 1 0 100 3 V 2 TVJ= 100°C IF = 30A 200 10 0 IF= 60A IF= 30A IF= 15A IRM A/μs 1000 -diF /dt VF Fig. 21. Forward Current IF Versus VF Fig. 22. Reverse Recovery Charge Qr Versus -diF/dt 2.0 TVJ= 100°C IF = 30A ns trr Kf 0 0 200 400 600 A/μs 800 -diF /dt 1.00 μs V V FR 15 VFR tfr 80 IF= 60A IF= 30A IF= 15A 1.0 IRM 1000 Fig. 23. Peak Reverse Current IRM Versus -diF/dt 20 90 1.5 TVJ= 100°C IF = 30A 5 TVJ= 100°C IF = 30A 10 tfr 0.75 0.50 70 0.5 5 0.25 Qr 0.0 0 40 80 120 °C 160 60 0 200 T VJ 400 600 800 A/μs 1000 -diF /dt Fig. 24. Dynamic Parameters Qr, IRM Versus TVJ Fig. 25. Recovery Time trr Versus -diF/dt 1 K/W 0.1 Z thJC 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 Fig. 27. Transient Thermal Resistance Junction to Case © 2012 IXYS CORPORATION, All Rights Reserved 0.1 t s 1 0 0 200 400 0.00 600 A/μs 800 1000 diF /dt Fig. 26. Peak Forward Voltage VFR and tfr Versus diF/dt Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.