IXYN80N90C3H1

Preliminary Technical Information IXYN80N90C3H1 900V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES = = IC90 VCE(sat)  tfi(typ) = 900V 70A 2.7V 86ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 900 900 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC90 IF110 ICM TC TC TC TC 115 70 42 340 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 160 @VCE  VCES A PC TC = 25°C 500 W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g = 25°C = 90°C = 110°C = 25°C, 1ms TJ TJM Tstg VISOL 50/60Hz IISOL  1mA t = 1min t = 1s Md Mounting Torque Terminal Connection Torque Weight E G E C G = Gate, C = Collector, E = Emitter  ither emitter terminal can be used as Main or Kelvin Emitter Features        Optimized for Low Switching Losses Square RBSOA Isolation Voltage 2500V~ Anti-Parallel Sonic Diode Positive Thermal Coefficient of Vce(sat) High Current Handling Capability International Standard Package Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 950 VGE(th) IC = 250μA, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V TJ = 125°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 60A, VGE = 15V, Note 1 TJ = 125°C © 2015 IXYS CORPORATION, All Rights Reserved 5.5 V Applications V  25 μA 1.5 mA ±100 nA 2.7 V V      2.3 2.9 High Power Density Low Gate Drive Requirement   High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100522A(12/15) IXYN80N90C3H1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 60A, VCE = 10V, Note 1 23 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 80A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 80A, VGE = 15V VCE = 0.5 • VCES, RG = 2 Note 2 Inductive load, TJ = 150°C IC = 80A, VGE = 15V VCE = 0.5 • VCES, RG = 2 Note 2 RthJC RthCS SOT-227B miniBLOC (IXYN) 38 S 4550 243 77 pF pF pF 145 42 65 nC nC nC 34 103 4.3 90 86 1.9 ns ns mJ ns ns mJ 2.7 34 100 5.7 103 98 2.5 ns ns mJ ns ns mJ 0.05 0.25 °C/W °C/W Reverse Sonic Diode (FRD) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IF = 60A, VGE = 0V, Note 1 VF IRM trr IF = 60A, VGE = 0V, -diF/dt = 700A/μs, VR = 600V Characteristic Values Min. Typ. Max. 2.7 TJ = 125°C TJ = 125°C 1.9 V V 41 A 420 ns RthJC Notes: 0.42 °C/W 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYN80N90C3H1 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 160 VGE = 15V 14V 13V 140 12V I C - Amperes 100 14V 250 120 I C - Amperes VGE = 15V 300 11V 80 10V 60 13V 200 12V 150 11V 100 9V 40 20 10V 50 8V 9V 7V 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 7V 0 4 0 5 10 15 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 2.2 160 VGE = 15V 13V 12V VGE = 15V 2.0 I C = 160A 1.8 V CE(sat) - Normalized 120 11V I C - Amperes 25 VCE - Volts VCE - Volts 140 20 100 80 10V 60 9V 40 1.6 1.4 I C = 80A 1.2 1.0 0.8 8V 20 I C = 40A 0.6 6V 0.4 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 5.5 -25 0 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 7 180 TJ = 25ºC 6 160 140 IC - Amperes 5 VCE - Volts 25 I C = 160A 4 80A 40A 3 120 TJ = 150ºC 25ºC 100 - 40ºC 80 60 40 2 20 1 0 8 9 10 11 12 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 8 9 VGE - Volts 10 11 12 IXYN80N90C3H1 Fig. 7. Transconductance Fig. 8. Gate Charge 80 16 TJ = - 40ºC VCE = 450V 14 60 25ºC 12 50 150ºC 10 V GE - Volts g f s - Siemens 70 40 30 8 6 20 4 10 2 0 I C = 80A I G = 10mA 0 0 20 40 60 80 100 120 140 160 180 200 0 220 20 40 I C - Amperes 60 80 100 120 140 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 180 10,000 140 120 1,000 I C - Amperes Capacitance - PicoFarads 160 Cies Coes 100 80 60 100 Cres f = 1 MHz 40 TJ = 150ºC 20 RG = 2Ω dv / dt < 10V / ns 0 10 0 5 10 15 20 25 30 35 100 40 200 300 400 500 600 700 800 900 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYN80N90C3H1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 3.4 12 Eoff Eon - 10 2.2 6 1.8 4 Eoff - MilliJoules Eoff - MilliJoules I C = 80A 1.0 3 4 5 6 7 8 9 10 11 12 13 14 3 6 TJ = 150ºC 2 4 TJ = 25ºC 40 15 50 60 RG - Ohms ---- RG = 2ΩVGE = 15V VCE = 450V 3.0 8 250 7 225 6 200 Eoff - MilliJoules 5 2.0 4 1.5 3 1.0 75 100 125 td(off) - - - - VCE = 450V 280 175 150 200 125 160 I C = 80A 120 1 75 80 0 150 50 40 2 3 4 5 6 tfi td(off) - - - - VCE = 450V tfi 140 175 100 100 TJ = 25ºC 90 50 80 25 70 80 I C - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 90 70 100 t f i - Nanoseconds t f i - Nanoseconds 110 60 11 12 13 14 15 180 td(off) - - - 160 150 I C = 40A 140 125 120 100 100 I C = 80A 75 80 50 25 50 75 100 TJ - Degrees Centigrade 125 60 150 t d(off) - Nanoseconds 125 50 10 VCE = 450V t d(off) - Nanoseconds 120 TJ = 150ºC 40 9 RG = 2Ω, VGE = 15V 130 150 75 8 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 200 150 RG = 2Ω, VGE = 15V 175 7 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 200 240 I C = 40A TJ - Degrees Centigrade 225 320 100 0.5 50 tfi 2 I C = 40A 0.0 Eon - MilliJoules 2.5 360 t d(off) - Nanoseconds I C = 80A 25 0 100 90 TJ = 150ºC, VGE = 15V t f i - Nanoseconds Eon 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 4.0 Eoff 70 I C - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 3.5 2 0 0 2 8 VCE = 450V 1 2 I C = 40A ---- Eon - MilliJoules 8 Eon - MilliJoules 2.6 Eon RG = 2ΩVGE = 15V 4 VCE = 450V 1.4 10 Eoff TJ = 150ºC , VGE = 15V 3.0 5 --- IXYN80N90C3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 180 td(on) - - - - 76 TJ = 150ºC, VGE = 15V VCE = 450V 140 I C = 80A 100 52 80 44 I C = 40A 60 36 40 28 20 t d(on) - Nanoseconds 60 3 4 5 6 7 8 9 10 11 12 13 14 tri 80 32 60 30 40 28 50 60 70 80 90 26 100 37 35 120 34 I C = 80A 100 33 80 32 60 31 40 30 I C = 40A 20 29 0 50 34 36 VCE = 450V 25 100 75 100 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 2Ω, VGE = 15V 140 36 I C - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 160 120 40 15 RG - Ohms 180 TJ = 25ºC, 150ºC 20 20 2 38 RG = 2Ω, VGE = 15V VCE = 450V 68 120 td(on) - - - - t d(on) - Nanoseconds 140 40 tri t r i - Nanoseconds 160 t r i - Nanoseconds 160 84 tri 125 28 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: Y_80N90C3H1(7D) 03-13-13 IXYN80N90C3H1 Fig. 22. Typ. Reverse Recovery Charge Qrr vs. -diF/dt Fig. 21. Typ. Forward characteristics 12 120 TVJ = 125ºC 11 100 TVJ = 25ºC IF = 120A 10 TVJ = 125ºC Q RM [µC] I F [A] 80 VR = 600V 60 9 60A 8 7 40 6 20 30A 5 4 0 0 0.5 1 1.5 2 2.5 600 3 700 800 VF - [V] Fig. 23. Typ. Peak Reverse Current IRM vs. -diF/dt 90 1000 1100 1200 1300 Fig. 24. Typ. Recovery Time trr vs. -diF/dt 700 IF = 120A TVJ = 125ºC 80 900 -diF/ dt [A/µs] TVJ = 125ºC VR = 600V VR = 600V 600 60 60A 50 30A Qrr [µC] I RM [A] 70 500 IF = 120A 400 40 60A 300 30 30A 20 600 700 800 900 1000 1100 1200 200 1300 600 diF/dt [A/µs] 800 900 1000 1100 1200 1300 -diF/dt [A/µs] Fig. 26. Maximum Transient Thermal Impedance ( Diode) Fig. 25. Typ. Recovery Energy Erec vs. -diF/dt 1 4.0 TVJ = 125ºC 3.6 700 IF = 120A VR = 600V Z(th)JC - K / W Erec [mJ] 3.2 2.8 60A 2.4 2.0 0.1 30A 1.6 1.2 0.8 600 700 800 900 1000 -diF /dt [A/µs] © 2015 IXYS CORPORATION, All Rights Reserved 1100 1200 1300 0.01 0.0001 0.001 0.01 0.1 Pulse Width [s] 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.