找到“LOG2112”相关的规格书共911个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| NAND01GW3B2CN6E | STMICROELECTRONICS[STMicroelectronics] | NAND01GW3B2CN6E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GW3B2BN6E | STMICROELECTRONICS[STMicroelectronics] | NAND01GW3B2BN6E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR4B2CN6 | STMICROELECTRONICS[STMicroelectronics] | NAND01GR4B2CN6 - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR3B2CZA6F | STMICROELECTRONICS[STMicroelectronics] | NAND01GR3B2CZA6F - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR3B2CN1E | STMICROELECTRONICS[STMicroelectronics] | NAND01GR3B2CN1E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR3B2BZA1E | STMICROELECTRONICS[STMicroelectronics] | NAND01GR3B2BZA1E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| NAND01GR3B2BN6E | STMICROELECTRONICS[STMicroelectronics] | NAND01GR3B2BN6E - 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory - STMicroelectronics | 获取价格 | ||
| R4F2112R | RENESAS[RenesasTechnologyCorp] | R4F2112R - 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series - Renesas Technology Corp | 获取价格 | ||
| 7KM2112-0BA00-3AA0 | Siemens Ltd | SIEMENS - 7KM2112-0BA00-3AA0 - Digital Panel Meter, Power / Energy Monitoring, Sentron PAC3200, DIN96 | 获取价格 | ||
| LDC2114|LDC2112 | Texas Instruments | LDC2112, LDC2114 Inductive Touch Solution for Low-Power HMI Button Applications datasheet (Rev. B) | 获取价格 | ||
| NAND16GW3C4BZL1E | NUMONYX[NumonyxB.V] | NAND16GW3C4BZL1E - 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory - Numonyx B.V | 获取价格 | ||
| NAND16GW3C4A | NUMONYX[NumonyxB.V] | NAND16GW3C4A - 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory - Numonyx B.V | 获取价格 | ||
| NAND16GW3C2BN1F | NUMONYX[NumonyxB.V] | NAND16GW3C2BN1F - 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory - Numonyx B.V | 获取价格 | ||
| NAND08GW4B4DZL6E | NUMONYX[NumonyxB.V] | NAND08GW4B4DZL6E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND08GW4B4DN1E | NUMONYX[NumonyxB.V] | NAND08GW4B4DN1E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND08GW4B2DZL1F | NUMONYX[NumonyxB.V] | NAND08GW4B2DZL1F - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND08GW3C4BZL1E | NUMONYX[NumonyxB.V] | NAND08GW3C4BZL1E - 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory - Numonyx B.V | 获取价格 | ||
| NAND08GW3C4BN6F | NUMONYX[NumonyxB.V] | NAND08GW3C4BN6F - 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory - Numonyx B.V | 获取价格 | ||
| NAND08GW3C2AZL6F | NUMONYX[NumonyxB.V] | NAND08GW3C2AZL6F - 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory - Numonyx B.V | 获取价格 | ||
| NAND08GW3C2AN6F | NUMONYX[NumonyxB.V] | NAND08GW3C2AN6F - 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory - Numonyx B.V | 获取价格 |
