FDMA1032CZ

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 20V Complementary PowerTrench“ MOSFET Features General Description x Q1: N-Channel „ 3.7 A, 20V. RDS(ON) = 68 m: @ VGS = 4.5V This device is designed specifically as a single package RDS(ON) = 86 m: @ VGS = 2.5V solution for a DC/DC 'Switching' MOSFET in cellular handset and other ultra-portable applications. x Q2: P-Channel „ –3.1 A, –20V. RDS(ON) = 95 m: @ VGS = –4.5V It features an independent N-Channel & P-Channel RDS(ON) = 141 m: @ VGS = –2.5V MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET „ x Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm „ HBM ESD protection level >2kV (Note 3) is also minimized to allow high frequency switching directly from the controlling device. The MicroFET 2x2 package offers exceptional thermal performance for its „ x RoHS Compliant „ Free from halogenated compounds and antimony oxides physical size and is well suited to switching applications. PIN 1 S1 G1 D1 D2 D2 D1 G2 S2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 MicroFET 2x2 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Q1 Q2 Units VDS Drain-Source Voltage Parameter 20 –20 V VGS Gate-Source Voltage r12 ±12 3.7 –3.1 V A Drain Current ID – Continuous (Note 1a) – Pulsed PD 6 Power Dissipation for Single Operation 1.4 (Note 1b) 0.7 Operating and Storage Junction Temperature Range TJ, TSTG –6 (Note 1a) W –55 to +150 qC Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation) qC/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 032 FDMA1032CZ 7’’ 8mm 3000 units ” 2010 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: FDMA1032CZ/D FDMA1032CZ 20V Complementary PowerTrench“ MOSFET FDMA1032CZ Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS On Characteristics Q1 Q2 Q1 Q2 Q1 Q2 All 20 –20 VDS = VGS, ID = 250 PA ID = –250 μA VDS = VGS, ID = 250 PA, Referenced to 25qC ID = –250 μA, Referenced to 25qC VGS = 4.5 V, ID = 3.7 A VGS = 2.5 V, ID = 3.3 A VGS = 4.5 V, ID = 3.7 A, TJ = 125qC VGS = –4.5V, ID = –3.1 A VGS = –2.5 V, ID = –2.5 A VGS = –4.5 V, ID = –3.1 A,TJ = 125qC VDS = 10 V, ID = 3.7 A VDS = –10 V, ID = –3.1 A Q1 Q2 Q1 Q2 Q1 0.6 –0.6 Q1 VDS = 10 V, VGS = 0 V, f = 1.0 MHz V 15 –12 mV/qC 1 –1 ±10 PA 1.0 –1.0 –4 4 37 50 53 1.5 –1.5 V 68 86 90 m: 95 141 140 m: Q1 Q2 60 88 87 16 –11 Q1 Q2 Q1 Q2 Q1 Q2 340 540 80 120 60 100 PA (Note 2) VGS(th) Gate Threshold Voltage 'VGS(th) 'TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance gFS VGS = 0 V, ID = 250 PA ID = –250 PA VGS = 0 V, ID = 250 PA, Referenced to 25qC ID = –250 μA, Referenced to 25qC VDS = 16 V, VGS = 0 V VGS = 0 V VDS = –16 V, VGS = ±12 V, VDS = 0 V Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Forward Transconductance Q2 mV/qC S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Q2 VDS = –10 V, VGS = 0 V, f = 1.0 MHz pF pF pF (Note 2) Q1 VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 :  Q2 VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 : Q1 VDS = 10 V, ID = 3.7 A, VGS = 4.5 V Q2 VDS = –10 V,ID =– 3.1 A, VGS =– 4.5 V www.onsemi.com 2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 13 8 11 14 37 3 36 4 7 0.7 1.1 1.1 2.4 16 24 16 20 26 59 6 58 6 10 ns ns ns ns nC nC nC FDMA1032CZ 20V Complementary PowerTrench“ MOSFET Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge trr Qrr (Note 2) VGS = 0 V, IS = 1.1 A (Note 2) VGS = 0 V, IS = –1.1 A Q1 IF = 3.7 A, dIF/dt = 100 A/μs Q2 IF = –3.1 A, dIF/dt = 100 A/μs Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 0.7 –0.8 11 25 2 9 1.1 –1.1 1.2 –1.2 A V ns nC Notes: 1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the user's board design. (a) RTJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. (b) RTJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RTJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation. (d) RTJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation. a)86 oC/W when mounted on a 1 in2 pad of 2 oz copper. b)173 oC/W when mounted on a minimum pad of 2 oz copper. c)69 oC/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 3 d)151 oC/W when mounted on a minimum pad of 2 oz copper. FDMA1032CZ 20V Complementary PowerTrench“ MOSFET Electrical Characteristics 6 2 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V VGS = 4.5V ID, DRAIN CURRENT (A) 5 3.5V 3.0V 4 3 2 1 1.5V 0 VGS = 2.0V 1.8 1.6 1.4 2.5V 1.2 3.5V 0.2 0.4 0.6 0.8 VDS, DRAIN-SOURCE VOLTAGE (V) 1 1.2 0 4.5V 1 2 3 4 ID, DRAIN CURRENT (A) 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 0.13 1.6 ID = 3.7A VGS = 4.5V 1.5 ID = 1.85A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0V 1 0.8 0 1.4 1.3 1.2 1.1 1 0.9 0.8 0.11 0.09 o 0.07 TA = 125 C 0.05 o TA = 25 C 0.7 0.6 0.03 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 3. On-Resistance Variation with Temperature. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 5 4 3 2 o TA = 125 C 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 6 ID, DRAIN CURRENT (A) 3.0V -55oC 1 o VGS = 0V 10 1 0.1 TA = 125oC 0.01 o 25 C o 0.001 -55 C 25 C 0.0001 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0 2.5 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 4 FDMA1032CZ 20V Complementary PowerTrench“ MOSFET Typical Characteristics Q1 (N-Channel) 10 500 VDS = 5V VGS, GATE-SOURCE VOLTAGE (V) ID = 3.7A f = 1MHz VGS = 0 V 15V 8 400 CAPACITANCE (pF) 10V 6 4 300 200 Coss 2 100 0 0 Crss 0 4 6 Qg, GATE CHARGE (nC) 2 8 10 P(pk), PEAK TRANSIENT POWER (W) 50 RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s 10s DC 1 VGS = 4.5V SINGLE PULSE RTJA = 173°C/W TA = 25°C 0.1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RTJA = 173°C/W TA = 25°C 40 30 20 10 0.01 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 Figure 8. Capacitance Characteristics. 100 10 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) Ciss 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RTJA(t) = r(t) * RTJA RTJA =173 °C/W 0.2 0.1 P(pk) 0.1 0.05 t1 0.02 0.01 t2 TJ - TA = P * RTJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 5 100 1000 1000 FDMA1032CZ 20V Complementary PowerTrench“ MOSFET Typical Characteristics Q1 (N-Channel) 6 2.6 VGS = 4 5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V -ID, DRAIN CURRENT (A) 5 3.5V 2.0V 3.0V 4 3 2 1 1.5V 0 1.8 -2.5V 1.4 -3.0V -3.5V 1 0.4 0.8 1.2 1.6 -VDS, DRAIN-SOURCE VOLTAGE (V) 2 0 -4.5V 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. Figure 12. On-Region Characteristics. 0.2 1.5 1.4 RDS(ON), ON-RESISTANCE (OHM) ID = -3.1A VGS = -4.5V 1.3 1.2 1.1 1 0.9 0.8 0.7 ID = -1.55A 0.16 0.12 o TA = 125 C 0.08 o TA = 25 C 0.04 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 14. On-Resistance Variation with Temperature. 100 10 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) VDS = -5V 5 4 3 2 TA = 125oC 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 6 -ID, DRAIN CURRENT (A) -4.0V 0.6 0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -2.0V 2.2 -55oC 1 25oC 0 10 1 TA = 125oC 0.1 o 25 C 0.01 o -55 C 0.001 0.0001 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 6 FDMA1032CZ 20V Complementary PowerTrench“ MOSFET Typical Characteristics: Q2 (P-Channel) 1000 f = 1MHz VGS = 0 V ID = -3.1A 800 8 VDS = -5V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 -15V 6 -10V 4 600 Ciss 400 Coss 2 200 0 0 Crss 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 12 14 0 Figure 18. Gate Charge Characteristics. 20 Figure 19. Capacitance Characteristics. 50 10 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100 100us 1ms 10ms 100ms 1 10s 1s DC VGS = -4.5V SINGLE PULSE o RTJA = 173 C/W 0.1 TA = 25oC 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RTJA = 173°C/W TA = 25°C 40 30 20 10 0 0.0001 Figure 20. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 21. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RTJA(t) = r(t) * RTJA RTJA =173 °C/W 0.2 0.1 P(pk) 0.1 0.05 t1 0.02 0.01 t2 TJ - TA = P * RTJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 22. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 7 100 1000 1000 FDMA1032CZ 20V Complementary PowerTrench“ MOSFET Typical Characteristics: Q2 (P-Channel) FDMA1032CZ 20V Complementary PowerTrench“ MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. FDMA1032CZ Rev B5 (W) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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