FDMA420NZ

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RDS(on) = 30m: @ VGS = 4.5 V, ID = 5.7A
RDS(on) = 40m:@ VGS = 2.5 V, ID = 5.0A
Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm Applications
HBM ESD protection level > 2.5k V typical (Note 3)
Li-lon Battery Pack
Free from halogenated compounds and antimony oxides
RoHS Compliant Pin 1 D D G Drain Source D D S 4 3 G D 5 2 D D 6 1 D Bottom Drain Contact S MicroFET Bottom View 2X2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain-Source Voltage Parameter VGSS Gate-Source Voltage Drain Current ID -Continuous -Pulsed (Note 1a) TJ, TSTG Units V r12 V 5.7 A 24 Power dissipation (Steady State) PD Ratings 20 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range 2.4 0.9 -55 to +150 W oC Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 52 RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 145 oC/W Package Marking and Ordering Information Device Marking 420 Device FDMA420NZ ©2009 Fairchild Semiconductor Corporation FDMA420NZ Rev B6 Reel Size 7” 1 Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET June 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V , ID = 250PA 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250PA, Referenced to 25°C 20 V IDSS Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V, 1 PA IGSS Gate-Body Leakage VGS = r12V, VDS = 0V r10 PA 1.5 V 12 mV/°C On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250PA 'VGS(th) 'TJ Gate Threshold Voltage Temperature Coefficient ID = 250PA, Referenced to 25°C -3.1 VGS = 4.5V, ID = 5.7A 16.8 30 VGS = 4.0V, ID = 5.7A 17.3 31 VGS = 3.1V, ID = 5.0A 18.9 33 VGS = 2.5V, ID = 5.0A 21.2 40 VGS = 4.5V, TJ =150°C ID = 5.7A, 24.8 44 VDS = 5V, ID = 5.7A 28.3 RDS(ON) gFS Static Drain-Source On-Resistance Forward Transconductance 0.6 0.83 mV/°C m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 10V, VGS = 0V, f = 1.0MHz f = 1.0MHz 701 935 pF 163 220 pF 125 190 pF : 1.92 Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6: VDS = 10V, ID = 5.7A, VGS = 4.5V 9.8 20 ns 8.6 18 ns 21.5 43 ns 8.6 18 ns 8.8 12 nC 0.9 2 nC 2.4 4 nC 2.0 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.0A trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IF = 5.7A, di/dt = 100A/Ps 0.69 1.2 V 20 ns 5 nC Notes: 1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. a. 52 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 145 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 Ps, Duty Cycle < 2.0%. 3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied. FDMA420NZ Rev B6 2 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX ID, DRAIN CURRENT (A) 45 40 35 VGS = 2.5V VGS = 4.5V 30 VGS = 3.5V 25 VGS = 3.0V 20 VGS = 2.0V 15 10 VGS = 1.5V 5 0 0 1 2 3 2.1 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 4 PULSE DURATION = 300PS DUTY CYCLE = 2.0%MAX 1.8 VGS = 2.0V VGS = 3.0V VGS = 2.5V 1.5 VGS = 3.5V 1.2 VGS = 4.5V 0.9 10 20 1.6 ID = 5.7A VGS = 4.5V 1.0 0.8 0.6 -80 -40 0 40 80 120 PULSE DURATION = 300PS DUTY CYCLE = 2.0%MAX 50 ID = 2.8A 40 TJ = 125oC 30 20 TJ = 25oC 10 160 1 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature 5 100 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Votlage 30 20 50 60 1.2 25 40 Figure 2. On-Resistance vs Drain Current and Gate Voltage RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics 1.4 30 ID, DRAIN CURRENT(A) VDS, DRAIN-SOURCE VOLTAGE (V) PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX VDS = 5V 15 TJ = 125oC 10 TJ = 25oC TJ = -55oC 5 0 0.5 1.0 1.5 2.0 2.5 1 TJ = 125oC TJ = 25oC 0.1 0.01 TJ = -55oC 1E-3 1E-4 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDMA420NZ Rev B6 VGS = 0V 10 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2000 VDS = 15V 4 VDS = 20V 3 VDS = 25V 2 1 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 f = 1MHz VGS = 0V 100 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance vs Drain to Source Voltage 100 6 10us ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Coss 50 0.1 12 Figure 7. Gate Charge Characteristics 10 100us 1ms 1 0.1 Ciss 1000 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 5 10ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0.01 0.1 SINGLE PULSE TJ=MAX RATED TA=25oC 100ms 1s 10s VGS = 4.5V 5 4 3 VGS = 2.5V 2 1 DC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 25 50 Figure 9. Forward Bias Safe Operating Area 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature P(PK), PEAK TRANSIENT POWER (W) 200 100 TA = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 – T I= I 10 A -------------------- 25 125 SINGLE PULSE 1 0.5 -4 10 -3 10 -2 10 -1 10 t, PULSE WIDTH (s) 0 10 1 10 2 10 3 10 Figure 11. Single Pulse Maximum Power Dissipation FDMA420NZ Rev B6 4 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER Normalized Thermal Impedance, ZTJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA RTJA = 145oC SINGLE PULSE 0.01 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION(s) Figure 12. Transient Thermal Response Curve FDMA420NZ Rev B6 5 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted Preliminary Datasheet FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-C06 FDMA420NZ Rev B6 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 FDMA420NZ Rev B6 7 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ ®* ® AX-CAP®* FRFET® ® SM BitSiC™ Global Power Resource PowerTrench TinyBoost® GreenBridge™ PowerXS™ Build it Now™ TinyBuck® Programmable Active Droop™ CorePLUS™ Green FPS™ TinyCalc™ ® QFET CorePOWER™ Green FPS™ e-Series™ TinyLogic® CROSSVOLT™ QS™ Gmax™ TINYOPTO™ CTL™ Quiet Series™ GTO™ TinyPower™ Current Transfer Logic™ RapidConfigure™ IntelliMAX™ TinyPWM™ DEUXPEED® ISOPLANAR™ ™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder TranSiC™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® and Better™ TriFault Detect™ SignalWise™ EfficentMax™ MegaBuck™ TRUECURRENT®* SmartMax™ ESBC™ MICROCOUPLER™ μSerDes™ SMART START™ MicroFET™ ® Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® UHC® STEALTH™ MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperFET® MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-3 mWSaver® FACT® ® VCX™ OptoHiT™ SuperSOT™-6 FAST ® VisualMax™ OPTOLOGIC SuperSOT™-8 FastvCore™ ® ® VoltagePlus™ OPTOPLANAR SupreMOS FETBench™ SyncFET™ XS™ FPS™ Sync-Lock™ 仙童 ™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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