FGA15S125P

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FGA15S125P 1250 V, 15 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications. The device can operate in parallel configuration with exceptional avalanche capability . This device is designed for induction heating and microwave oven. • Low Saturation Voltage: VCE(sat) = 2.25 V @ IC = 15 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven C G TO-3PN E G CE Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) IF PD Ratings Unit 1250 V ± 25 V Collector Current @ TC = 25oC 30 A Collector Current @ TC = 100oC 15 A 45 A Pulsed Collector Current o Diode Continuous Forward Current @ TC = 25 C 30 A Diode Continuous Forward Current @ TC = 100oC 15 A Maximum Power Dissipation @ TC = 25oC 136 W Maximum Power Dissipation @ TC = 100oC 68 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds o 300 C Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC(IGBT) Thermal Resistance, Junction to Case, Max - 1.1 oC/W RθJA Thermal Resistance, Junction to Ambient, Max - 40 oC/W Notes: 1: Limited by Tjmax ©2012 Fairchild Semiconductor Corporation FGA15S125P Rev. C3 1 www.fairchildsemi.com FGA15S125P — 1250 V, 15 A Shorted-anode IGBT August 2013 Device Marking Device Package Reel Size Tape Width Quantity FGA15S125P FGA15S125P TO-3PN - - 30 Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit Off Characteristics ICES Collector Cut-Off Current VCE = 1250V, VGE = 0V - - 1 mA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±500 nA IC = 15mA, VCE = VGE 4.5 6.0 7.5 V IC = 15A, VGE = 15V TC = 25oC - 2.25 2.72 V IC = 15A, VGE = 15V TC = 125oC - 2.5 - V IC = 15A, VGE = 15V, TC = 175oC - 2.75 - V IF = 15A, TC = 25oC - 2 2.55 V IF = 15A, TC = 175oC - 2.55 - V - 1360 - pF On Characteristics VGE(th) VCE(sat) VFM G-E Threshold Voltage Collector to Emitter Saturation Voltage Diode Forward Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 40 - pF - 20 - pF Switching Characteristics td(on) Turn-On Delay Time - 10 - ns tr Rise Time - 260 - ns td(off) Turn-Off Delay Time tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss VCC = 600V, IC = 15A, RG = 10Ω, VGE = 15V, Resistive Load, TC = 25oC - 400 - ns - 100 - ns - 0.74 - mJ - 0.50 - mJ Ets Total Switching Loss - 1.24 - mJ td(on) Turn-On Delay Time - 11 - ns tr Rise Time - 320 - ns td(off) Turn-Off Delay Time - 420 - ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 1.23 - mJ Ets Total Switching Loss - 2.17 - mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge ©2012 Fairchild Semiconductor Corporation FGA15S125P Rev. C3 VCC = 600V, IC = 15A, RG = 10Ω, VGE = 15V, Resistive Load,, TC = 175oC VCE = 600V, IC = 15A, VGE = 15V 2 - 250 - ns - 0.94 - mJ - 129 - nC - 9 - nC - 66 - nC www.fairchildsemi.com FGA15S125P — 1250 V, 15 A Shorted-anode IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 80 80 o TC = 25 C 20V o 15V TC = 175 C 17V VGE=17V Collector Current, IC [A] Collector Current, IC [A] 70 60 12V 50 40 30 10V 20 9V 10 8V 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Collector-Emitter Voltage, VCE [V] 12V 30 10V 20 9V 8V 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Collector-Emitter Voltage, VCE [V] 8.0 50 Common Emitter VGE = 15V 50 Common Emitter VCE = 20V o o TC = 175 C --- 40 30 20 10 0 0.0 o 40 TC = 25 C Collector Current, IC [A] Collector Current, IC [A] 40 Figure 4. Transfer Characteristics 60 TC = 25 C o TC = 175 C 30 20 10 0 1.0 2.0 3.0 4.0 Collector-Emitter Voltage, VCE [V] 5.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Gate-Emitter Voltage, VGE [V] Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 6. Saturation Voltage vs. VGE 20 4.5 Common Emitter VGE = 15V Collector Emitter Voltage, VCE [V] Common Emitter 30A 3.5 3.0 15A 2.5 IC = 7.5A 2.0 1.5 1.0 25 15V 50 0 0.0 8.0 Figure 3. Typical Saturation Voltage Characteristics 4.0 60 10 0 Collector-Emitter Voltage, VCE [V] VGE=20V 70 o TC = 25 C 15 10 15A 30A IC = 7.5A 5 0 50 75 100 125 150 Case Temperature, TC [oC] ©2012 Fairchild Semiconductor Corporation FGA15S125P Rev. C3 0 175 3 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGA15S125P — 1250 V, 15 A Shorted-anode IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 20 10000 o TC = 175 C 16 12 30A 15A 8 IC = 7.5A 100 Coes 10 4 Cres Common Emitter VGE = 0V, f = 1MHz o TC = 25 C 1 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 20 Figure 9. Gate charge Characteristics 30 Figure 10. SOA Characteristics 100 15 Common Emitter o TC = 25 C 400V 600V 12 Collector Current, Ic [A] Gate Emitter Voltage, VGE [V] Cies 1000 Capacitance [pF] Collector Emitter Voltage, VCE [V] Common Emitter VCC = 200V 9 6 3 10μs 10 100μs 1ms 10ms DC 1 *Notes: 0.1 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0.01 0 0 10 20 30 40 50 Gate Charge, Qg [nC] 60 1 70 Figure 11. Turn-on Characteristics vs. Gate Resistance 10 100 Collector-Emitter Voltage, VCE [V] 1000 Figure 12. Turn-off Characteristics vs. Gate Resistance 200 10000 Common Emitter VCC = 600V, VGE = 15V IC = 15A tr td(on) Switching Time [ns] Switching Time [ns] o Common Emitter VCC = 600V, VGE = 15V IC = 15A TC = 25 C 1000 o TC = 175 C --- 100 td(off) tf o TC = 25 C o TC = 175 C --- 5 10 20 30 40 50 Gate Resistance, RG [Ω] ©2012 Fairchild Semiconductor Corporation FGA15S125P Rev. C3 60 70 10 4 20 30 40 50 Gate Resistance, RG [Ω] 60 70 www.fairchildsemi.com FGA15S125P — 1250 V, 15 A Shorted-anode IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 10Ω 1000 o o TC = 25 C TC = 25 C o o TC = 175 C --- Switching Time [ns] Switching Time [ns] 1000 tr 100 td(on) 15 Collector Current, IC [A] 7.5 500 tf 7.5 15 Collector Current, IC [A] 30 Figure 16. Switching Loss vs. Collector Current 10k 10k Common Emitter VCC = 600V, VGE = 15V IC = 15A o Common Emitter VGE = 15V, RG = 10Ω TC = 25 C Eoff o o TC = 175 C --- 1k TC = 175 C --- 1k 100 0 20 Eon o Eon Switching Loss [uJ] TC = 25 C Switching Loss [uJ] td(off) 30 Figure 15. Switching Loss vs. Gate Resistance 30 40 50 Gate Resistance, RG [Ω] 60 70 7.5 Figure 17. Turn off Switching SOA Characteristics Eoff 15 Collector Current, IC [A] 30 Figure 18. Forward Characteristics 100 80 Forward Current, IF [A] Collector Current, IC [A] TC = 175 C --- 100 10 100 10 Common Emitter VGE = 15V, RG = 10Ω 10 10 1 o TC = 25 C --- Safe Operating Area o o VGE = 15V, TC = 175 C TC = 175 C 1 1 10 100 Collector-Emitter Voltage, VCE [V] ©2012 Fairchild Semiconductor Corporation FGA15S125P Rev. C3 0.1 1000 0.5 5 1 Forward Voltage, VF [V] 2 www.fairchildsemi.com FGA15S125P — 1250 V, 15 A Shorted-anode IGBT Typical Performance Characteristics FGA15S125P — 1250 V, 15 A Shorted-anode IGBT Typical Performance Characteristics Figure 19. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 1.2 1 0.5 0.2 0.1 PDM 0.05 0.02 0.01 single pulse 0.1 1E-5 1E-4 t1 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 1E-3 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] ©2012 Fairchild Semiconductor Corporation FGA15S125P Rev. C3 6 www.fairchildsemi.com FGA15S125P — 1250 V, 15 A Shorted-anode IGBT Mechanical Dimensions Figure 20. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003 Dimensions in Millimeters ©2012 Fairchild Semiconductor Corporation FGA15S125P Rev. C3 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2012 Fairchild Semiconductor Corporation FGA15S125P Rev. C3 8 www.fairchildsemi.com FGA15S125P — 1250 V, 15 A Shorted-anode IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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