| 1 | BCW68GLT1G | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):800mA;功率(Pd):225mW;直流电流增益(hFE@Ic,Vce):120@10... | 下载 | Murata Manufacturing Co., Ltd. |
| 2 | BC818-40LT1G | 晶体管类型:NPN;集射极击穿电压(Vceo):25V;集电极电流(Ic):500mA;功率(Pd):225mW;直流电流增益(hFE@Ic,Vce):250@10... | 下载 | Murata Manufacturing Co., Ltd. |
| 3 | BC848B,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):200@2m... | 下载 | Rubycon Corporation |
| 4 | BZT-RLZ39D | BZT-RLZ39D - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
| 5 | BFS19,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):20V;集电极电流(Ic):30mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):65@1mA,... | 下载 | Rubycon Corporation |
| 6 | BC807-16,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Rubycon Corporation |
| 7 | BC847A,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):110@2m... | 下载 | Rubycon Corporation |
| 8 | BZT-RLZ39C | BZT-RLZ39C - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
| 9 | BSS138LT1G | 类型:N沟道;漏源电压(Vdss):50V;连续漏极电流(Id):200mA;功率(Pd):225mW;导通电阻(RDS(on)@Vgs,Id):3.5Ω@5V,2... | 下载 | Murata Manufacturing Co., Ltd. |
| 10 | BSR58 | FET类型:-;栅源击穿电压(V(BR)GSS):-;饱和漏源电流(Idss@Vds,Vgs=0):-;漏源导通电阻(RDS(on)):-;功率(Pd):-; | 下载 | Murata Manufacturing Co., Ltd. |
| 11 | BSH203,215 | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):470mA;功率(Pd):417mW;导通电阻(RDS(on)@Vgs,Id):900mΩ@4.5... | 下载 | Rubycon Corporation |
| 12 | BZT-RLZ39A | BZT-RLZ39A - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
| 13 | BZT-RLZ39 | BZT-RLZ39 - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
| 14 | BSS84LT1G | 类型:P沟道;漏源电压(Vdss):50V;连续漏极电流(Id):130mA;功率(Pd):225mW;导通电阻(RDS(on)@Vgs,Id):10Ω@5V,10... | 下载 | Murata Manufacturing Co., Ltd. |
| 15 | BCX19,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Rubycon Corporation |
| 16 | BSH205G2R | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2A;功率(Pd):480mW;导通电阻(RDS(on)@Vgs,Id):170mΩ@4.5V,2... | 下载 | Rubycon Corporation |
| 17 | BCW60D,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):32V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):380@2m... | 下载 | Rubycon Corporation |
| 18 | BCW72LT1G | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):225mW;直流电流增益(hFE@Ic,Vce):200@2m... | 下载 | Murata Manufacturing Co., Ltd. |
| 19 | BSH108,215 | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):1.9A;功率(Pd):830mW;导通电阻(RDS(on)@Vgs,Id):120mΩ@10V,... | 下载 | Rubycon Corporation |
| 20 | BSS63,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):30@25... | 下载 | Rubycon Corporation |
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