| 1 | PDTD143ETR | TRANS PREBIAS NPN 0.425W | 下载 | Nexperia |
| 2 | PDTC143ET,215 | 1 NPN - Pre Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 3 | PDTA114ET,215 | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 4 | PDTA123ET,215 | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 5 | PDTC114TT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直... | 下载 | Rubycon Corporation |
| 6 | PDTA114TT,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA... | 下载 | Rubycon Corporation |
| 7 | PDTD143ETR | 晶体管类型:1个NPN-预偏置;功率(Pd):460mW;集电极电流(Ic):-;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;直流电... | 下载 | Rubycon Corporation |
| 8 | PDTA115ET,215 | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-; | 下载 | Rubycon Corporation |
| 9 | PDTA124XT,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA... | 下载 | Rubycon Corporation |
| 10 | PDTC115TT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直... | 下载 | Rubycon Corporation |
| 11 | PMV28UNEAR | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.7A;功率(Pd):510mW；3.9W;导通电阻(RDS(on)@Vgs,Id):32mΩ@... | 下载 | Rubycon Corporation |
| 12 | PMV52ENEAR | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):3.2A;功率(Pd):630mW；5.7W;导通电阻(RDS(on)@Vgs,Id):70mΩ@... | 下载 | Rubycon Corporation |
| 13 | PMV90ENER | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):3A;功率(Pd):460mW;导通电阻(RDS(on)@Vgs,Id):72mΩ@3A,10V; | 下载 | Rubycon Corporation |
| 14 | PMV164ENEAR | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):1.6A;功率(Pd):640mW；5.8W;导通电阻(RDS(on)@Vgs,Id):218mΩ... | 下载 | Rubycon Corporation |
| 15 | PBRP113ZT,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):600mA;集射极击穿电压(Vceo):40V; | 下载 | Rubycon Corporation |
| 16 | PMBT2222A,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Rubycon Corporation |
| 17 | PMBT3904,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Rubycon Corporation |
| 18 | PBSS8110T,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):100V;集电极电流(Ic):1A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):150@250m... | 下载 | Rubycon Corporation |
| 19 | PMBTA06,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):80V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Rubycon Corporation |
| 20 | PBSS4350T,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):2A;功率(Pd):540mW;直流电流增益(hFE@Ic,Vce):300@1A,2V... | 下载 | Rubycon Corporation |
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