| 1 | PBSS9110X,135 | 晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):1A;功率(Pd):1.4W;直流电流增益(hFE@Ic,Vce):150@500mA... | 下载 | Rubycon Corporation |
| 2 | PBSS5350X,135 | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):3A;功率(Pd):1.4W;直流电流增益(hFE@Ic,Vce):200@1A,2V; | 下载 | Rubycon Corporation |
| 3 | PDTD123TT,215 | Pre Biased Triodes NPN Ic=500mA Vceo=50V hfe=100 P=250mW SOT23 | 下载 | Rubycon Corporation |
| 4 | PDTC144WT,215 | 1 NPN - Pre Biased 250mW 100mA 50V SOT-23-3L Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 5 | PDTD113ZT,215 | 1 NPN - Pre Biased 250mW 500mA 50V SOT-23-3L Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 6 | PDTD123YT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):500mA;集射极击穿电压(Vceo):50V; | 下载 | Rubycon Corporation |
| 7 | PDTA123YT,215 | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 8 | PDTC143ZT,215 | 100@10mA,5V 100mV@5mA,250uA 1 NPN - Pre Biased 230MHz 250mW 100mA 50V 1uA SOT-23 ... | 下载 | Rubycon Corporation |
| 9 | PDTB123ET,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):500mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA... | 下载 | Rubycon Corporation |
| 10 | PBRP113ET,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):600mA;集射极击穿电压(Vceo):40V; | 下载 | Rubycon Corporation |
| 11 | PDTA113ZT,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100mA... | 下载 | Rubycon Corporation |
| 12 | PDTB143ETR | 晶体管类型:1个PNP-预偏置;功率(Pd):320mW;集电极电流(Ic):500mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):500nA... | 下载 | Rubycon Corporation |
| 13 | PDTC123JT,235 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直... | 下载 | Rubycon Corporation |
| 14 | PMV15UNEAR | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):7A;功率(Pd):610mW；8.3W;导通电阻(RDS(on)@Vgs,Id):19mΩ@7A... | 下载 | Rubycon Corporation |
| 15 | PMV230ENEAR | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):1.5A;功率(Pd):480mW；1.45W;导通电阻(RDS(on)@Vgs,Id):222m... | 下载 | Rubycon Corporation |
| 16 | PDTC143ET,235 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直... | 下载 | Rubycon Corporation |
| 17 | PDTD123ET,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):-;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;直流电... | 下载 | Rubycon Corporation |
| 18 | PMBT4401,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Rubycon Corporation |
| 19 | PMBT4403,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Rubycon Corporation |
| 20 | PBSS4240T,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):2A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):250@2A,2V... | 下载 | Rubycon Corporation |
工商网监