| 1 | PMV52ENEAR | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):3.2A;功率(Pd):630mW；5.7W;导通电阻(RDS(on)@Vgs,Id):70mΩ@... | 下载 | Rubycon Corporation |
| 2 | PMV90ENER | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):3A;功率(Pd):460mW;导通电阻(RDS(on)@Vgs,Id):72mΩ@3A,10V; | 下载 | Rubycon Corporation |
| 3 | PMV164ENEAR | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):1.6A;功率(Pd):640mW；5.8W;导通电阻(RDS(on)@Vgs,Id):218mΩ... | 下载 | Rubycon Corporation |
| 4 | PBRP113ZT,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):600mA;集射极击穿电压(Vceo):40V; | 下载 | Rubycon Corporation |
| 5 | PMBT2222A,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Rubycon Corporation |
| 6 | PMBT3904,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Rubycon Corporation |
| 7 | PBSS8110T,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):100V;集电极电流(Ic):1A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):150@250m... | 下载 | Rubycon Corporation |
| 8 | PMBTA06,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):80V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Rubycon Corporation |
| 9 | PBSS4350T,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):2A;功率(Pd):540mW;直流电流增益(hFE@Ic,Vce):300@1A,2V... | 下载 | Rubycon Corporation |
| 10 | PMBFJ177,215 | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):50mA;功率(Pd):300mW;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs... | 下载 | Rubycon Corporation |
| 11 | PMBF170,215 | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):300mA;功率(Pd):830mW;导通电阻(RDS(on)@Vgs,Id):5Ω@10V,50... | 下载 | Rubycon Corporation |
| 12 | PMBTA92,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):300V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):25@30... | 下载 | Rubycon Corporation |
| 13 | PJ2301-AU_R1_000A1 | | 下载 | PANJIT SEMI CONDUCTOR |
| 14 | PBSS4230T,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):2A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):300@1A,2V... | 下载 | Rubycon Corporation |
| 15 | PMV100ENEAR | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):3A;功率(Pd):460mW；4.5W;导通电阻(RDS(on)@Vgs,Id):72mΩ@3A... | 下载 | Rubycon Corporation |
| 16 | PMV45EN2R | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.1A;功率(Pd):510mW；5W;导通电阻(RDS(on)@Vgs,Id):42mΩ@10... | 下载 | Rubycon Corporation |
| 17 | PMBT2907,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Rubycon Corporation |
| 18 | PMBTA56,235 | 晶体管类型:PNP;集射极击穿电压(Vceo):80V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Rubycon Corporation |
| 19 | PBSS5230T,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):30V;集电极电流(Ic):2A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):200@1A,2V... | 下载 | Rubycon Corporation |
| 20 | PBLS6024D,115 | 晶体管类型:1个PNP-预偏置;功率(Pd):480mW;集电极电流(Ic):100mA；1.5A;集射极击穿电压(Vceo):50V；60V; | 下载 | Rubycon Corporation |
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