SCTW40N120G2V

SCTW40N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package Features 2 1 3 • • • Order code VDS RDS(on)max. ID SCTW40N120G2V 1200 V 100 mΩ 36 A Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Very high operating junction temperature capability (TJ = 200 °C) Applications HiP247 • • • D(2, TAB) Switching mode power supply DC-DC converters Industrial motor control Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. G(1) S(3) AM01475v1_noZen Product status link SCTW40N120G2V Product summary Order code SCTW40N120G2V Marking SCT40N120G2V Package HiP247 Packing Tube DS13504 - Rev 2 - June 2021 For further information contact your local STMicroelectronics sales office. www.st.com SCTW40N120G2V Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VGS Parameter Value Unit Drain-source voltage 1200 V Gate-source voltage -10 to 22 Gate-source voltage (recommended operational values) -5 to 18 V Drain current (continuous) at TC = 25 °C 36 Drain current (continuous) at TC = 100 °C 27 IDM(1) Drain current (pulsed) 108 A PTOT Total power dissipation at TC = 25 °C 278 W Tstg Storage temperature range ID TJ Operating junction temperature range -55 to 200 A °C °C 1. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol DS13504 - Rev 2 Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value Unit 0.63 °C/W 40 °C/W page 2/12 SCTW40N120G2V Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 1200 V IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 22 V VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA RDS(on) Static drain-source on-resistance Min. Typ. Max. 1200 Unit V 10 µA ±100 nA 2.45 4.90 V VGS = 18 V, ID = 20 A 62 100 VGS = 18 V, ID = 20 A, TJ = 200 °C 137 1.90 mΩ Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 800 V, f = 1 MHz, VGS = 0 V f = 1 MHz, ID = 0 A VDD = 800 V, VGS = -5 to 18 V, ID = 20 A Min. Typ. Max. Unit - 1233 - pF - 56 - pF - 15 - pF - 1 - Ω - 61 - nC - 13 - nC - 25 - nC Min. Typ. Max. Unit Table 5. Switching energy (inductive load) Symbol Parameter Test conditions Eon Turn-on switching energy VDD = 800 V, ID = 20 A, - 243 - µJ Eoff Turn-off switching energy RG = 4.7 Ω, VGS = -5 V to 18 V - 48 - µJ Min. Typ. Max. Unit - 13.4 - ns Table 6. Switching times Symbol td(on) tf td(off) tr DS13504 - Rev 2 Parameter Test conditions Turn-on delay time Rise time VDD = 800 V, ID = 20 A, - 10.3 - ns Turn-off delay time RG = 4.7 Ω, VGS = -5 to 18 V - 22 - ns - 7.9 - ns Fall time page 3/12 SCTW40N120G2V Electrical characteristics Table 7. Reverse SiC diode characteristics Symbol DS13504 - Rev 2 Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions ISD = 20 A, VGS = 0 V ISD = 20 A, di/dt = 2000 A/μs, VDD = 800 V, VGS = -5 to 18 V Min. Typ. Max. Unit - 3.3 - V - 15 - ns - 77 - nC - 9 - A page 4/12 SCTW40N120G2V Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Maximum transient thermal impedance Figure 1. Safe operating area ID (A) ZthJC (°C/W) GADG021020200809SOA IDM GADG021020200810ZTH 0.4 0.3 0.2 duty=0.5 10 1 O is per lim ati ite on d in by th R is a DS (o rea n) 10 2 tp =100µs 10 10 10 1 ID (A) 0.05 10 -2 RthJC = 0.63 °C/W duty = ton / T tp =10ms V(BR)DSS 2 10 3 VDS (V) Figure 3. Typical output characteristics (TJ = 25°C) 70 0.1 tp =1ms TJ = 200 °C TC = 25 °C Single pulse 0 10 -1 tp =10µs RDS(on) max. 10 0 10 -1 10 -1 tp =1µs Single pulse 10 -3 10 -6 T 10 -5 10 -4 14 V VGS = 16, 18, 20 V 50 40 10 -2 10 -1 tp (s) GADG021020200811OCH200 VGS = 14, 16, 18, 20 V 50 12 V 10 -3 Figure 4. Typical output characteristics (TJ = 200 °C) ID (A) GADG021020200810OCH25 60 ton 12V 10V 40 8V 30 10 V 30 20 20 8V 10 0 0 2 4 6 8 6V VDS (V) 0 0 Figure 5. Typical transfer characteristics ID (A) GADG021020200811TCH TJ = 25 °C 70 60 6V 10 2 4 6 8 10 VDS (V) Figure 6. Total power dissipation PTOT (W) GADG021020200812PDT 250 VDS = 8 V TJ = 200 °C 200 50 TJ = 200 °C 40 30 150 100 20 50 10 0 0 DS13504 - Rev 2 4 8 12 16 VGS (V) 0 -75 -25 25 75 125 175 TC (°C) page 5/12 SCTW40N120G2V Electrical characteristics (curves) Figure 7. Typical gate charge characteristics VGS (V) GADG260420211149QVG Figure 8. Typical capacitance characteristics C (pF) GADG021020200813CVR VDD = 800 V ID = 20 A 15 Ciss 10 3 10 5 10 2 Crss 0 Coss f = 1 MHz -5 0 10 20 30 40 50 60 Qg (nC) Figure 9. Typical switching energy vs drain current E (μJ) GADG021020200815SLD VDD = 800 V, RG = 4.7 Ω, VGS = -5 to 18 V, 10 1 10 -1 10 0 10 1 10 2 10 3 Figure 10. Typical switching energy vs junction temperature GADG021020200816SLT E (μJ) VDD = 800 V, VGS = -5 to 18 V, Etot RG = 4.7 Ω, ID = 20 A, Etot 400 600 Eon 300 400 VDS (V) Eon 200 200 Eoff 0 0 10 20 30 100 ID (A) Figure 11. Normalized breakdown voltage vs temperature V(BR)DSS (norm.) GADG021020200834BDV 1.06 ID = 1 mA Eoff 0 25 75 125 175 TJ (°C) Figure 12. Normalized gate threshold vs temperature VGS(th) (norm.) GADG021020200836VTH 1.2 ID = 1mA 1.04 1.0 1.02 1.00 0.8 0.98 0.6 0.96 0.94 -75 DS13504 - Rev 2 -25 25 75 125 175 TJ (°C) 0.4 -75 -25 25 75 125 175 TJ (°C) page 6/12 SCTW40N120G2V Electrical characteristics (curves) Figure 13. Normalized on-resistance vs temperature RDS(on) (norm.) GADG021020200836RON 2.2 VGS = 18 V -30 1.6 VGS = 10 V -50 1.2 -60 1.0 VGS = 0 V -70 -25 25 75 125 175 TJ (°C) Figure 15. Typical reverse conduction characteristics (TJ = 200 °C) ID (A) GADG021020200843RCC200 -80 -8 VGS = -10 V E (μJ) 600 -4 -2 VDS (V) GADG0306202108000SLG Etot VDD = 800 V ID = 20 A VGS = -5 to 18 V Eon 500 VGS = 0 V -30 -6 Figure 16. Typical switching energy vs gate resistance 700 -20 400 -40 300 -50 Eoff 200 -60 VGS = 10 V 100 -70 DS13504 - Rev 2 VGS = -10 V -40 1.4 -80 -8 GADG021020200840RCC25 -20 1.8 -10 ID (A) -10 2.0 0.8 -75 Figure 14. Typical reverse conduction characteristics (TJ = 25 °C) -6 -4 -2 VDS (V) 0 0 4 8 12 16 20 RG (Ω) page 7/12 SCTW40N120G2V Package information 3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 3.1 HiP247 package information Figure 17. HiP247 package outline 8581091_4 DS13504 - Rev 2 page 8/12 SCTW40N120G2V HiP247 package information Table 8. HiP247 package mechanical data Dim. Min. Typ. Max. A 4.85 5.00 5.15 A1 2.20 A2 1.90 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.85 20.00 20.15 E 15.45 15.60 15.75 E3 1.45 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 18.30 P 3.55 3.65 Q 5.65 5.95 S 5.30 aaa DS13504 - Rev 2 mm 2.60 2.00 2.10 1.65 5.45 18.50 5.60 18.70 5.50 5.70 0.04 0.10 page 9/12 SCTW40N120G2V Revision history Table 9. Document revision history Date Version 08-Oct-2020 1 Changes First release. Modified title, RDS(on) value, applications and description on cover page. 09-Jun-2021 2 Modified Table 2. Thermal data and Table 3. On/off states. Modified Section 2.1 Electrical characteristics (curves). Minor text changes. DS13504 - Rev 2 page 10/12 SCTW40N120G2V Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.1 HiP247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS13504 - Rev 2 page 11/12 SCTW40N120G2V IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS13504 - Rev 2 page 12/12