STD6NF10T4

STD6NF10 STU6NF10 N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STD6NF10 100 V < 0.250 Ω 6A STU6NF10 100 V < 0.250 Ω 6A ■ Exceptional dv/dt capability ■ 100% avalanche tested 3 3 2 1 IPAK 1 DPAK Application ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements. Table 1. Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging STD6NF10T4 D6NF10 DPAK Tape and reel STU6NF10 6NF10 IPAK Tube November 2008 Rev 6 1/14 www.st.com 14 Contents STD6NF10, STU6NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 8 STD6NF10, STU6NF10 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 6 A ID Drain current (continuous) at TC = 100 °C 4 A Drain current (pulsed) 24 A Total dissipation at TC = 25 °C 30 W Derating factor 0.2 W/°C Peak diode recovery voltage slope 40 V/ns Single pulse avalanche energy 200 mJ -65 to 175 °C Value Unit 5 °C/W IDM (1) Ptot dv/dt (2) EAS (3) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 6 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 3. Starting Tj = 25 °C, ID = 3 A, VDD = 50 V Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 100 °C/W Maximum lead temperature for soldering purpose 300 °C TJ 3/14 Electrical characteristics 2 STD6NF10, STU6NF10 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS =0 100 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS =max rating, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 3 A Table 5. Symbol Max. Unit V 1 10 µA µA ±100 nA 4 V 0.22 0.25 Ω Typ. Max. Unit 2 Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS = > ID(on) x RDS(on)max, ID = 3A 34 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 280 45 20 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 50 V, ID = 3 A RG = 4.7 Ω, VGS = 10 V (see Figure 13) 6 10 20 3 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 80 V, ID = 6 A, VGS = 10 V, RG = 4.7 Ω (see Figure 14) 10 2.5 4 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/14 Typ. 14 nC nC nC STD6NF10, STU6NF10 Table 6. Symbol Electrical characteristics Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 6 A, VGS = 0 Reverse recovery time ISD = 6 A, di/dt = 100 A/µs, Reverse recovery charge VDD = 10 V, Tj = 150 °C Reverse recovery current (see Figure 15) 70 175 5 Max. Unit 6 24 A A 1.3 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/14 Electrical characteristics STD6NF10, STU6NF10 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/14 STD6NF10, STU6NF10 Figure 8. Electrical characteristics Gate charge vs. gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs. temperature Capacitance variations Figure 11. Normalized on resistance vs. temperature Figure 12. Source-drain diode forward characteristics 7/14 Test circuits 3 STD6NF10, STU6NF10 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/14 Figure 18. Switching time waveform STD6NF10, STU6NF10 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STD6NF10, STU6NF10 TO-251 (IPAK) mechanical data mm. DIM. A min. typ max. 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 4.60 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 10/14 STD6NF10, STU6NF10 Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 D1 E 6.20 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 R V2 1 0.20 0o 8o 0068772_G 11/14 Packing mechanical data 5 STD6NF10, STU6NF10 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 12/14 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD6NF10, STU6NF10 6 Revision history Revision history Table 7. Document revision history Date Revision Changes 21-Jun-2004 3 Complete version 20-Jul-2006 4 New template, no content change 16-Sep-2008 5 Corrected part number: STU6NF10 19-Nov-2008 6 Marking label in Table 1 for the device in IPAK has been updated. IGSS value in Table 4 has been updated 13/14 STD6NF10, STU6NF10 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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