STD10NF10T4

STD10NF10T4 N-channel 100 V, 0.115 Ω typ., 13 A STripFET™ II Power MOSFET in a DPAK package Datasheet - production data Features   Order code VDS RDS(on) max. ID STD10NF10T4 100 V 0.130 Ω 13 A Exceptional dv/dt capability Application oriented characterization Applications Figure 1: Internal schematic diagram  Switching applications Description D(2, TAB) This Power MOSFET series realized with STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer applications. It is also suitable for any application with low gate charge drive requirements. G(1) S(3) AM01475v1_Tab Table 1: Device summary Order code Marking Package Packing STD10NF10T4 D10NF10 DPAK Tape and reel April 2016 DocID029150 Rev 1 This is information on a product in full production. 1/17 www.st.com Contents STD10NF10T4 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.2 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/17 4.1 DPAK (TO-252) type A package information..................................... 9 4.2 DPAK (TO-252) type C package information .................................. 11 4.3 Packing information ......................................................................... 14 Revision history ............................................................................ 16 DocID029150 Rev 1 STD10NF10T4 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VDGR Drain-gate voltage (RGS = 20 kΩ) 100 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 13 A ID Drain current (continuous) at TC = 100 °C 9 A (1) IDM Drain current (pulsed) 52 A PTOT Total dissipation at TC = 25 °C 50 W (2) EAS Single pulse avalanche energy 70 mJ Peak diode recovery voltage slope 9 V/ns - 55 to 175 °C dv/dt (3) Tj Operating junction temperature range Tstg Storage temperature range Notes: (1) (2) (3) Pulse width limited by safe operating area. Starting TJ = 25 °C, ID = 13 A, VDD = 50 V ISD ≤ 13 A, di/dt ≤ 300 A/µs; VDS peak < V(BR)DSS, TJ ≤ TJMAX Table 3: Thermal data Symbol Parameter Rthj-case Rthj-pcb (1) Value Unit Thermal resistance junction-case 3 °C/W Thermal resistance junction-pcb 50 °C/W Notes: (1) When mounted on 1 inch² FR-4, 2 Oz copper board DocID029150 Rev 1 3/17 Electrical characteristics 2 STD10NF10T4 Electrical characteristics TC = 25 ° C unless otherwise specified Table 4: On/off-state Symbol Parameter Test conditions Min. V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA 100 Typ. Max. Unit V VGS = 0 V, VDS = 100 V 1 µA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 100 V (1) TC = 125 °C 10 µA IGSS Gate body leakage current VDS=0 V, VGS ±20 V ± 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 5 A 0.115 0.130 Ω Max. Unit 2 Notes: (1) Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions Min. Typ. - 460 pF - 70 pF - 30 pF - 15.3 - 3.7 nC - 4.7 nC Test conditions Min. Typ. Max. Unit VDD= 50 V, ID = 5 A, RG = 4.7 Ω VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times") - 16 - ns - 25 - ns - 32 - ns - 8 - ns VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 80 V, ID = 10 A VGS= 10 V (see Figure 14: "Test circuit for gate charge behavior" ) 21 (1) nC Notes: (1) Defined by design, not subject to production test. Table 6: Switching times Symbol td(on) tr td(off) tf 4/17 Parameter Turn-on delay time Rise time Turn-off delay time Fall time DocID029150 Rev 1 STD10NF10T4 Electrical characteristics Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 13 A (1) Source-drain current (pulsed) - 52 A (2) Forward on voltage ISD = 10 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 10 A, di/dt = 100 A/µs, - 90 ns Qrr Reverse recovery charge - 230 nC IRRM Reverse recovery current VDD = 50 V, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 5 A ISD ISDM VSD Notes: (1) (2) Pulse width limited by safe operating area Pulsed: pulse duration = 300 µ s, duty cycle 1.5% DocID029150 Rev 1 5/17 Electrical characteristics 2.2 STD10NF10T4 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics 9 Figure 6: Gate charge vs gate-source voltage 6/17 Figure 7: Static drain-source on-resistance DocID029150 Rev 1 STD10NF10T4 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics DocID029150 Rev 1 7/17 Test circuits 3 8/17 STD10NF10T4 Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID029150 Rev 1 STD10NF10T4 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 4.1 DPAK (TO-252) type A package information Figure 19: DPAK (TO-252) type A package outline 0068772_A_21 DocID029150 Rev 1 9/17 Package information STD10NF10T4 Table 8: DPAK (TO-252) type A mechanical data mm Dim. Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 10/17 Typ. 5.10 5.25 6.60 1.00 0.20 0° DocID029150 Rev 1 8° STD10NF10T4 4.2 Package information DPAK (TO-252) type C package information Figure 20: DPAK (TO-252) type C package outline 0068772_C_21 DocID029150 Rev 1 11/17 Package information STD10NF10T4 Table 9: DPAK (TO-252) type C mechanical data mm Dim. Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 5.46 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.25 E 6.50 E1 4.70 e 6.10 6.20 6.60 6.70 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 2.90 REF 0.90 L3 L4 1.25 0.51 BSC 0.60 L6 12/17 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° DocID029150 Rev 1 8° STD10NF10T4 Package information Figure 21: DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_21 DocID029150 Rev 1 13/17 Package information 4.3 STD10NF10T4 Packing information Figure 22: DPAK (TO-252) tape outline 14/17 DocID029150 Rev 1 STD10NF10T4 Package information Figure 23: DPAK (TO-252) reel outline Table 10: DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 B1 D 1.5 D1 1.5 E 1.65 F 1.6 Min. Max. 330 13.2 D 20.2 G 16.4 1.85 N 50 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID029150 Rev 1 18.4 22.4 15/17 Revision history 5 STD10NF10T4 Revision history Table 11: Document revision history 16/17 Date Revision 06-Apr-2016 1 DocID029150 Rev 1 Changes First release. STD10NF10T4 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID029150 Rev 1 17/17