STD25NF10T4

STD25NF10T4 Datasheet N-channel 100 V, 33 mΩ typ., 25 A, STripFET™ II Power MOSFET in a DPAK package Features TAB 2 3 1 • • • DPAK Type VDS RDS(on) max. ID STD25NF10T4 100 V 38 mΩ 25 A Exceptional dv/dt capability 100% avalanche tested Low gate charge D(2, TAB) Applications • G(1) Switching applications Description S(3) AM01475v1_noZen This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD25NF10T4 Product summary Order code STD25NF10T4 Marking D25NF10 Package DPAK Packing Tape and reel DS2063 - Rev 5 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD25NF10T4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Drain-source voltage 100 V Gate-source voltage (RGS = 20 kΩ) 100 V Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 25 A Drain current (continuous) at TC = 100 °C 21 A IDM(1) Drain current (pulsed) 100 A PTOT Total dissipation at TC = 25 °C 100 W EAS Single-pulse avalanche energy 480 mJ dv/dt(3) Peak diode recovery voltage slope 13 V/ns -55 to 175 °C Value Unit Thermal resistance junction-case 1.5 °C/W Thermal resistance junction-pcb 50 °C/W VDS VDGR VGS ID (2) Tstg Parameter Storage temperature range Tj Operating junction temperature range 1. Pulse width limited by safe operating area. 2. Starting TJ = 25 °C, ID = 12.5 A, VDD = 50 V 3. ISD ≤ 25 A, di/dt ≤ 300 A/μs, VDS ≤ V(BR)DSS, TJ ≤ TJMAX Table 2. Thermal data Symbol Rthj-case Rthj-pcb (1) Parameter 1. When mounted on an FR-4 board of 1 inch², 2 oz Cu. DS2063 - Rev 5 page 2/18 STD25NF10T4 Electrical characteristics 2 Electrical characteristics TCASE = 25 °C unless otherwise specified Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 250 μA Min. Typ. 100 Zero gate voltage drain current 1 µA 10 µA ±100 nA 3 4 V 33 38 mΩ Min. Typ. Max. Unit - 1550 - pF - 220 - pF - 95 - pF VGS = 0 V, VDS = 100 V, TC = 125 °C(1) IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDD = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 12.5 A Unit V VGS = 0 V, VDS = 100 V IDSS Max. 2 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge VDD = 80 V, ID = 25 A, - 55 - nC Gate-source charge VGS = 0 to 10 V - 12 - nC Gate-drain charge (see Figure 12. Test circuit for gate charge behavior) - 20 - nC Min. Typ. Max. Unit Qgs Qgd VDS = 25 V, f = 1 MHz, VGS = 0 V Table 5. Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time VDD = 50 V, ID = 12.5 A, - 17 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 60 - ns Turn-off delay time (see Figure 11. Test circuit for resistive load switching times and Figure 16. Switching time waveform) - 60 - ns - 15 - ns Min. Typ. Max. Unit Fall time Table 6. Source-drain diode Symbol ISD ISDM(1) VSD DS2063 - Rev 5 (2) Parameter Test conditions Source-drain current - 25 A Source-drain current (pulsed) - 100 A - 1.5 V Forward on voltage ISD = 25 A, VGS = 0 V page 3/18 STD25NF10T4 Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time ISD = 25 A, di/dt = 100 A/µs, - 88 ns Qrr Reverse recovery charge VDD = 50 V, TJ = 150 °C - 317 nC Reverse recovery current (see Figure 16. Switching time waveform) - 7.2 A IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DS2063 - Rev 5 page 4/18 STD25NF10T4 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics DS2063 - Rev 5 Figure 2. Thermal impedance Figure 4. Transfer characteristics page 5/18 STD25NF10T4 Electrical characteristics (curves) Figure 5. Gate charge vs gate-source voltage VDS = 80 V ID = 25 A Figure 6. Static drain-source on-resistance 35 34 33 32 31 Figure 7. Source-drain diode forward characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on-resistance vs temperature -100 DS2063 - Rev 5 -100 page 6/18 STD25NF10T4 Test circuits 3 Test circuits Figure 11. Test circuit for resistive load switching times Figure 12. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 13. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 14. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 16. Switching time waveform Figure 15. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS2063 - Rev 5 page 7/18 STD25NF10T4 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS2063 - Rev 5 page 8/18 STD25NF10T4 DPAK (TO-252) type A package information 4.1 DPAK (TO-252) type A package information Figure 17. DPAK (TO-252) type A package outline 0068772_A_25 DS2063 - Rev 5 page 9/18 STD25NF10T4 DPAK (TO-252) type A package information Table 7. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS2063 - Rev 5 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 10/18 STD25NF10T4 DPAK (TO-252) type C2 package information 4.2 DPAK (TO-252) type C2 package information Figure 18. DPAK (TO-252) type C2 package outline 0068772_C2_25 DS2063 - Rev 5 page 11/18 STD25NF10T4 DPAK (TO-252) type C2 package information Table 8. DPAK (TO-252) type C2 mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.10 E 6.50 E1 5.20 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 6.20 5.60 6.60 6.70 5.50 0.90 1.25 0.51 BSC 0.60 L6 DS2063 - Rev 5 6.10 5.46 2.90 REF L3 L4 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 12/18 STD25NF10T4 DPAK (TO-252) type C2 package information Figure 19. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS2063 - Rev 5 page 13/18 STD25NF10T4 DPAK (TO-252) packing information 4.3 DPAK (TO-252) packing information Figure 20. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS2063 - Rev 5 page 14/18 STD25NF10T4 DPAK (TO-252) packing information Figure 21. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 9. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS2063 - Rev 5 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 15/18 STD25NF10T4 Revision history Table 10. Document revision history Date Version Changes 21-Jun-2004 3 Preliminary version 03-Jul-2006 4 New template, no content change Updated information on cover page. 09-Aug-2018 5 Updated Section 4 Package information. Minor text changes DS2063 - Rev 5 page 16/18 STD25NF10T4 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.3 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 DS2063 - Rev 5 page 17/18 STD25NF10T4 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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