STD26NF10

STD26NF10 N-channel 100V - 0.033Ω - 25A - DPAK Low gate charge STripFET™ II Power MOSFET Features Type VDSS RDS(on) ID STD26NF10 100V < 0.038Ω 25A ■ Exceptional dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested ■ Application oriented characterization 3 1 DPAK Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is intended for any application with low gate charge drive requirements. Internal schematic diagram Applications ■ Switching application – Automotive Order code Part number Marking Package Packaging STD26NF10 D26NF10 DPAK Tape & reel April 2007 Rev 1 1/13 www.st.com 13 Contents STD26NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 8 STD26NF10 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Drain-source voltage (VGS = 0) 100 V Drain-gate voltage (RGS = 20 kΩ) 100 V VGS Gate- source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25°C 25 A ID Drain current (continuous) at TC = 100°C 21 A Drain current (pulsed) 100 A Total dissipation at TC = 25°C 100 W Derating Factor 0.67 W/°C Peak diode recovery avalanche energy 13 V/ns Single pulse avalanche energy 480 mJ -55 to 175 °C VDS VDGR IDM (2) Ptot dv/dt(3) EAS (4) Tstg Tj Parameter Storage temperature Max. operating junction temperature 1. Current limited by package 2. Pulse width limited by safe operating area. 3. ISD ≤35A, di/dt ≤300A/µs, VDD =V(BR)DSS, Tj ≤TJMAX 4. Starting Tj = 25 °C, ID = 12.5A VDD = 50V Table 2. Thermal data Rthj-case Thermal resistance junction-case max 1.5 °C/W Rthj-amb Thermal resistance junction-to ambient max 100 °C/W Maximum lead temperature for soldering purpose 300 °C TJ 3/13 Electrical characteristics 2 STD26NF10 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 12.5A Table 4. Symbol Test conditions Typ. Max. 100 2 Unit V 1 10 µA µA ±100 nA 3 4 V 0.033 0.038 Ω Typ. Max. Unit Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS = 15V, ID = 12.5A 20 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 1550 220 95 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 50V, ID = 12.5A RG = 4.7Ω VGS = 10V (see Figure 12) 17 60 60 15 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 80V, ID = 12.5A, VGS = 10V, RG = 4.7Ω (see Figure 13) 55 12 20 nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/13 Min. STD26NF10 Electrical characteristics Table 5. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions Min. Typ. ISD = 25A, VGS = 0 Reverse recovery time ISD = 25A, di/dt = 100A/µs, Reverse recovery charge VDD = 50V, Tj = 150°C Reverse recovery current (see Figure 14) 88 317 7.2 Max. Unit 25 100 A A 1.5 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/13 Electrical characteristics STD26NF10 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STD26NF10 Electrical characteristics Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 11. Source-drain diode forward characteristics 7/13 Test circuit 3 STD26NF10 Test circuit Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform 8/13 Figure 17. Switching time waveform STD26NF10 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13 Package mechanical data STD26NF10 DPAK MECHANICAL DATA mm. inch DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 TYP 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 MAX. MIN. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 6.6 0.252 5.1 6.4 0.260 0.090 4.6 10.1 0.173 0.368 0.039 2.8 0.8 0.181 0.397 0.110 0.031 1 0.023 0.2 0° 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.185 2.28 0.6 MAX. 0.200 4.7 4.4 9.35 1 TYP. 0.039 0.008 8° 0° 8° 0068772-F 10/13 STD26NF10 5 Packing mechanical data Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 11/13 Revision history 6 STD26NF10 Revision history Table 6. 12/13 Revision history Date Revision 20-Apr-2007 1 Changes First release STD26NF10 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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